SFP50N06 Silicon N-Channel MOSFET Features ■ RDS(on)(Max 22mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 31nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s trench layout-based process.This technology improves the performances compared with standard parts from various sources. All of these power MOSFETs are designed for applications in switching regulators, switching convertors, G D motor and relay drivers, and drivers for high power bipolar switching S TO220 transistors demanding high speed and low gate drive power. Absolute Maximum Ratings Symbol VDSS ID Parameter Value Units Drain Source Voltage 60 V Continuous Drain Current(@Tc=25℃) 50 A Continuous Drain Current(@Tc=100℃) 38 A 200 A ±25 V IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) 480 mJ EAR Repetitive Avalanche Energy (Note 2) 13 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.8 V/ns PD TJ, Tstg TL Total Power Dissipation(@Tc=25℃) 130 W Derating Factor above 25℃ 1.3 W/℃ -55~150 ℃ 300 ℃ Junction and Storage Temperature Channel Temperature (for 10 seconds) Thermal Characteristics Symbol Parameter RQJC Thermal Resistance, Junction-to-Case RQcs Case-to-Sink, Flat, Greased Surface RQJA Thermal Resistance, Junction-to-Ambient Min Value Typ Max - - 0.96 Rev, c Nov.2008 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. - ℃/W ℃/W 0.5 - Units 62.5 ℃/W SFP50N06 Electrical Characteristics (Tc = 25°C) Characteristics Gate leakage current Symbol Test Condition Min Type Max Unit IGSS VGS = ±20 V, VDS = 0 V - - ±100 nA V(BR)GSS IG = ±10 μA, VDS = 0 V ±20 - - V VDS = 60 V, VGS = 0 V - - 1 μA VDS = 60 V, Tc = 125°C - - 250 μA V(BR)DSS ID = 250 μA, VGS = 0 V 60 - - V Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 2 - 4 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID = 25A - 20 22 mΩ Forward Transconductance gfs VDS=25V, ID = 25A - 22 - s Input capacitance Ciss VDS = 25 V, - 1180 1540 Reverse transfer capacitance Crss VGS = 0 V, - 64 91 Output capacitance Coss f = 1 MHz - 440 580 tr VDD=30V - 15 40 Gate−source breakdown voltage Drain cut−off current IDSS Drain−source breakdown voltage Rise time Turn−on time ID =25A ton RG =25 Ω - 105 220 tf VGS = 10V - 60 130 - 65 140 Switching time Fall time Turn−off time pF ns (Note4,5) toff Total gate charge (gate−source plus gate−drain) Qg Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd VDD =48 V, 31 41 8 - 13 - - VGS = 10 V, - ID =50 A (Note4,5) - nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Type Max Unit IDR - - - 59 A Pulse drain reverse current IDRP - - - 200 A Forward voltage (diode) VDSF IDR =35A, VGS = 0 V - - 1.5 V Reverse recovery time trr IDR =35A, VGS = 0 V, - 52 - ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 75 - μC Continuous drain reverse current Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=0.5mH,IAS=25A,VDD=25V,VGS=10V,Starting TJ=25℃ 3.ISD≤25A,di/dt≤380A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. 2/7 Steady, keep you advance SFP50N06 This transistor is an electrostatic sensitive device Please handle with caution Fig. 1 Transfer Characteristics Fig.3 Typical Capacitance vs Drain Current Fig.5 On-Resistance Variation vs Junction Temperature Fig.2 On-Statet Characteristics Fig.4 On-Resistance Variation vs Drain Current and Gate Voltage Fig.6 Gate Charge Characteristics 3/7 Steady, keep you advance SFP50N06 Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response Curve 4/7 Steady, keep you advance SFP50N06 Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 Steady, keep you advance SFP50N06 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, keep you advance SFP50N06 TO-220 Package Dimension Unit:mm 7/7 Steady, keep you advance