WFF2N65
Silicon N-Channel MOSFET
Features
�
2A,650V(Type),RDS(on)(Max 5Ω)@VGS=10V
�
Ultra-low Gate Charge(Typical 9.0nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Isolation Voltage(VISO=4000V AC)
�
Maximum Junction Temperature Range(150℃)
�
Halogen free(WFF2N65-HF)
General Description
This Power
MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology. This latest technology has been
especially designed to minimize on -state resistance,have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch mode power supply .
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
650
V
Continuous Drain Current(@Tc=25℃)
2*
A
Continuous Drain Current(@Tc=100℃)
1.3*
A
16*
A
±30
V
Drain Source Voltage
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
240
mJ
EAR
Repetitive Avalanche Energy
(Note1)
10
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.5
V/ ns
23
W
0.26
W/℃
-55~150
℃
300
℃
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
TL
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RQJC
Thermal Resistance , Junction -to -Case
RQCS
Thermal Resistance , Case-to-Sink
RQJA
Thermal Resistance , Junction-to -Ambient
Value
Units
Min
Typ
Max
-
-
5.4
℃/W
0.5
-
-
℃/W
-
-
62.5
℃/W
Rev.A Aug.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WFF2N65
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Break Voltage Temperature
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=600V,VGS=0V
-
-
10
µA
VDS=480V,Tc=125℃
-
100
µA
-
-
V
0.65
-
Drain cut -off current
Drain -source breakdown voltage
Test Condition
IDSS
V(BR)DSS
△BVDSS/
Coefficient
TJ
ID=250 µA,VGS=0V
650
ID=250µA,Referenced
to 25℃
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=1A
-
4.2
5
Ω
Forward Transconductance
gfs
VDS=50V,ID=1A
-
2.05
-
S
Input capacitance
Ciss
VDS=25V,
-
380
490
Reverse transfer capacitance
Crss
VGS=0V,
-
7.6
9.9
Output capacitance
Coss
f=1MHz
-
35
49
VDD=300V,
-
15
42
ID=2A，
-
50
108
RG=25Ω，
-
40
89
-
40
89
-
9.0
19
-
1.7
-
-
7.2
-
Min
Type
Max
Unit
Rise time
tr
Turn-on time
ton
Switching time
pF
ns
Fall time
tf
Turn-off time
(Note4,5)
toff
Total gate charge(gate-source
VDD=320V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=2A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
IDR
-
-
-
2
A
Pulse drain reverse current
IDRP
-
-
-
6
A
Forward voltage(diode)
VDSF
IDR=2A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=2A,VGS=0V,
-
200
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
1.3
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=0.5mH IAS=2.0A,VDD=50V,RG=0Ω ,Starting TJ=25℃
3.ISD≤2.0A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/8
Steady, keep you advance
WFF2N65
Fig.1 On-State Characteristics
Fig.2 Transfer Current characteristics
Fig.3 On Resistance variation vs
Fig.4 Body Diode Forward Voltage
Drain Current
Variation vs Source Current
And temperature
Fig.5 On-Resistance Variation vs
Fig.6 Gate Charge Characteristics
Junction Temperature
3/8
Steady, keep you advance
WFF2N65
Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain Current vs
Case Temperature
Fig.9 Transient Thermal Response curve
4/8
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WFF2N65
Marking layout
-
: Winsemi Semiconductor Logo
WW : Weekly code(01-52)
YY :
Last two digit of calendar year
(11:2011;12:2012)
□
∆∆h
WWYY
WFF2N65
□ : HF
Null
∆
Halogen free
Halogen
: Chip serial number
5/8
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WFF2N65
Fig.10 Gate Test circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Uncamped Inductive Switching Test Circuit & Waveform
6/8
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WFF2N65
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
7/8
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WFF2N65
TO-220F Package Dimension
Unit:mm
8/8
Steady, keep you advance