D4N60 WF WFD Silicon N-Channel MOSFET Features ■ 4A,600V.RDS(on)(Max 2.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced Planar stripe, DMOS technology. This latest technology has Been Especially designed to minimize on-state resistance, have a high Rugged avalanche characteristics. This devices is specially well Suited for half bridge and full bridge resonant topology line a Electronic lamp ballast. Absolute Maximum Ratings Symbol VDSS Parameter Value Units 600 V Continuous Drain Current(@Tc=25℃) 4 A Continuous Drain Current(@Tc=100℃) 2.5 A 16 A ±30 V 240 mJ Drain Source Voltage ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy (Note 1) 10 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns 80 W 0.78 W/℃ -55~150 ℃ 300 ℃ (Note 2) Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ, Tstg TL Junction and Storage Temperature Channel Temperature Thermal Characteristics Symbol Parameter RQJC Thermal Resistance, Junction-to-Case RQJA Thermal Resistance, Junction-to-Ambient* RQJA Thermal Resistance, Junction-to-Ambient Value Min Typ Max - - 1.56 Units ℃/W 50 - - *When mounted on the minimum pad size recommended(PCB Mount) Rev.A Nov.2010 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. 110 ℃/W D4N60 WF WFD Electrical Characteristics (Tc = 25°C) Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Symbol Min Type Max Unit IGSS VGS = ±30 V, VDS = 0 V Test Condition - - ±100 nA V(BR)GSS IG = ±10 μA, VDS = 0 V ±30 - - V VDS = 600 V, VGS = 0 V - - 10 μA VDS = 480 V, Tc = 125°°C - - 100 μA IDSS V(BR)DSS ID = 250 μA, VGS = 0 V 600 - - V Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 2 - 4 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID =3.25A - 1.8 2.5 Ω Input capacitance Ciss VDS = 25 V, - 545 670 Reverse transfer capacitance Crss VGS = 0 V, - 7 10 Output capacitance Coss f = 1 MHz - 70 90 VDD =300 V, - 10 30 ton ID = 4.4 A - 35 80 tf RG=25 Ω - 45 100 - 20 50 - 16 20 - 3.4 - - 7 - Rise time Turn−on time tr Switching time pF ns Fall time Turn−off time (Note4,5) toff Total gate charge (gate−source VDD = 480 V, Qg plus gate−drain) VGS = 10 V, nC Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd ID =4.4A (Note4,5) Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 4 A Pulse drain reverse current IDRP - - - 17.6 A Forward voltage (diode) VDSF IDR =4.4 A, VGS = 0 V - - 1.4 V Reverse recovery time trr IDR = 4.4 A, VGS = 0 V, - 390 - ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 2.2 - μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=18.5mH,IAS=4.4A,VDD=50V,RG=0Ω,Starting TJ=25℃ 3.ISD≤4A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, keep you advance D4N60 WF WFD Fig.1 On-State Characteristics Fig.2 Transfer Current characteristics Fig3. On Resistance Variation vs Drain current Fig.4 Body Diode Forward Voltage Variation vs Source Current and Temperature Fig.5 On-Resistance Variation vs Fig.6 Gate Charge Characteristics Junction Temperature 3/7 Steady, keep you advance D4N60 WF WFD Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response curve 4/7 Steady, keep you advance D4N60 WF WFD Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 Steady, keep you advance D4N60 WF WFD Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, keep you advance D4N60 WF WFD 52 Package Dimension TO-2 TO-252 Unit:mm 7/7 Steady, keep you advance