5N0 3 WFY WFY5 N03 30V N−Channel MOSFET Features ■ 5.8A, 30V, RDS(on)(Max 33mΩ)@VGS=-4.5V ■ 1.4V Rated for Low Voltage Gate Drive ■ SOT-23 Surface Mount for Small Footprint ■ Single Pulse Avalanche Energy Rated ■ Halogen-free General Description D This Power MOSFET is produced using Winsemi’s advanced MOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for Load switching and PA switching. G S T-23 SO SOT Absolute Maximum Ratings(Tc=25℃ unless otherwise noted) Symbol Parameter Value Units VDSS Drain Source Voltage 30 V ID Continuous Drain Current 5.8 A IDM Drain Current Pulsed 30 A PD Total Power Dissipation(Note 1) 0.25 W Tc=75℃ VGS Gate to Source Voltage ESD ESD Capability (Note 3) TJ, Tstg Junction and Storage Temperature TL Maximum lead Temperature for soldering purposes 0.3 C=100pF,RS = 1500Ω ±8 V 225 V -55~150 ℃ 260 ℃ Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Thermal Characteristics Symbol RQJA RQJA RQJA Parameter Thermal Resistance, Junction-to-Ambient(Note 1) Thermal Resistance, Junction-to-Ambient(Note 1) Thermal Resistance, Junction-to-Ambient(Note 2) Value Min Typ Max - - 170 110 300 Units ℃/W ℃/W ℃/W Note 1: Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) Note 2: Surface−mounted on FR4 board using the minimum recommended pad size. Note 3: ESD Rating Information: HBM Class 0 Rev. A Jun.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. P03-3 5N0 3 WFY WFY5 N03 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current(Note 4) IGSS VGS = ±12 V, VDS = 0 V - - ±100 nA Drain cut−off current(Note 4) IDSS VDS =24 V, VGS = 0 V - - 1 μA V(BR)DSS ID = 250 μA, VGS = 0 V 30 - - V Gate threshold voltage VGS(th) VDS = VGS ID =250 μA 0.7 1.1 1.4 V VGS = 4.5 V, ID = 5 A - 28 33 Drain−source ON resistance RDS(ON) 44 52 Drain−source breakdown voltage mΩ VGS = 2.5 V, ID = 4 A Input capacitance Ciss VDS = 15V, - 823 1050 Reverse transfer capacitance Crss VGS = 0 V, - 77 - Output capacitance Coss f = 1 MHz - 99 - - 3.3 5 Turn-on Delay time td(on) Turn−on Rise time tr VDS =15V, - 4.8 7 Turn-off Delay time td(off) RG = 3 Ω, - 26.3 40 tf RL=2.7 Ω - 4.1 6 Qg VGS = 4.5V, - 9.7 12 Gate−source charge Qgs VDS =15 V, - 1.6 - Gate−drain (“miller”) Charge Qgd ID = 5.8 A - 3.1 - Switching time (Note 5) Turn−off Fall time Total gate charge VGS = 10 V, pF ns nC Source−Drain Ratings and Characteristics (Ta = 25°C) Symbol Test Condition Min Type Max Unit Continuous drain reverse current Characteristics IDR - - - 5.8 A Pulse drain reverse current IDRP - - - 30 A Forward voltage (diode) VDSF - 0.71 1.0 V IDR = 1A, VGS = 0 V Note 4: Pulse Test: Pulse Width ≤300μs, Duty Cycle 3 2%. Note 5: Switching characteristics are independent of operating junction temperature. This transistor is an electrostatic sensitive device Please handle with caution 2 /5 Steady, keep you advance 5N0 3 WFY WFY5 N03 3 /5 Steady, keep you advance 5N0 3 WFY WFY5 N03 4 /5 Steady, keep you advance 5N0 3 WFY WFY5 N03 T-23 Package Dimension SO SOT DIM A A1 B C D E F G H I J MILLIMTERS MIN INCHES MAX MIN 0.95 1.90 2.60 1.40 2.80 1.00 0.00 0.35 0.10 0.30 50o MAX 0.037 0.074 3.00 1.70 3.10 1.30 0.10 0.50 0.20 0.60 10o 0.102 0.055 0.110 0.039 0.000 0.014 0.004 0.012 50o 0.118 0.067 0.122 0.051 0.004 0.020 0.008 0.024 10o 5 /5 Steady, keep you advance