WFY3P02

WFY3P02
Trench Power MOSFET
ngle P−Channel, SO
T−23
−20 V, Si
Sin
SOT
Features
■ -3.2A, -20V, RDS(on)(Max 85mΩ)@VGS=-4.5V
■ −1.5 V Rated for Low Voltage Gate Drive
■ SOT-23 Surface Mount for Small Footprint
■ Single Pulse Avalanche Energy Rated
■ Halogen-free
General Description
D
This Power MOSFET is produced using Winsemi’s advanced
MOS technology. This latest technology has been especially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics. This devices is specially well suited for
Load/Power Management for Portables and Computing,
Charging Circuits and Battery Protection
G
S
T-23
SO
SOT
Marking : P02YM
Y :year ,M :months
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain Source Voltage
ID
Continuous Drain Current(Note 1)
PD
Total Power Dissipation(Note 1)
ID
Continuous Drain Current(Note 2)
PD
IDM
Total Power Dissipation(Note 2)
Drain Current Pulsed
VGS
Gate to Source Voltage
ESD
ESD Capability (Note 3)
TJ, Tstg
TL
Junction and Storage Temperature
Value
Units
-20
V
Tc=25℃
−2.4
Tc=85℃
Tc=25℃
t=10s
-1.7
-3.2
0.73
1.25
-1.8
-1.3
0.42
-7.5
±8
V
C=100pF,R S = 1500Ω
225
V
-55~150
℃
260
℃
Steady State
t≤10s
Steady State
t≤10s
Steady State
Tc=25℃
Tc=25℃
Tc=85℃
Tc=25℃
Maximum lead Temperature for soldering purposes
A
W
A
W
A
Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are
individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be affected.
Thermal Characteristics
Symbol
RQJA
RQJA
RQJA
Parameter
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 2)
Value
Min
Typ
Max
-
-
170
110
300
Units
℃/W
℃/W
℃/W
Note 1: Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
Note 2: Surface−mounted on FR4 board using the minimum recommended pad size.
Note 3: ESD Rating Information: HBM Class 0
Re v. A Ma r .20 10
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
P02-1
WFY3P02
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Gate leakage current(Note 4)
IGSS
VGS = ±8 V, VDS = 0 V
-
-
±100
nA
Drain cut−off current(Note 4)
IDSS
VDS = -16 V, VGS = 0 V
-
-
-1
μA
V(BR)DSS
ID = -250 μA, VGS = 0 V
-20
-
-
V
VGS(th)
VDS = VDS ID =-250 μA
-0.40
-0.72
-1.5
V
-
70
85
VGS = −2.5 V, ID = −1.3 A
90
120
VGS = −1.8 V, ID = −0.9 A
112
200
Drain−source breakdown voltage
Gate threshold voltage
VGS = −4.5 V, ID = −1.6 A
Drain−source ON resistance
RDS(ON)
Forward Transconductance
gfs
VDS = −5.0 V, ID = −2.3 A
-
75
-
Input capacitance
Ciss
VDS = -10 V,
-
675
-
Crss
VGS = 0 V,
-
75
-
Coss
f = 1 MHz
-
100
-
tr
VGS = −4.5 V,
-
12.6
-
ton
VDS = −10 V,
-
7.5
-
ID =
−1.6 A,
-
21.0
-
RG = 6.0 Ω
-
30.2
-
-
7.5
8.5
-
1.2
-
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
(Note 5)
Turn−on time
Fall time
Turn−off time
tf
toff
Total gate charge (gate−source plus
Qg
gate−drain)
mΩ
S
pF
ns
VGS = −4.5 V,
VDS = −10 V,
nC
ID = −1.6 A
Gate−source charge
Qgs
Gate−drain (“miller”) Charge
Qgd
-
2.2
-
RG
-
6.5
-
Ω
Reverse Recovery Charge
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
-2.4
A
Pulse drain reverse current
IDRP
-
-
-
-7.5
A
Forward voltage (diode)
VDSF
-
-0.82
-1.2
V
Reverse recovery time
trr
-
12.8
15
ns
Charge Time
ta
Discharge Time
tb
Reverse recovery charge
Qrr
IDR = -2.4A, VGS = 0 V
IDR = -2.4A,
VGS = 0 V,
dIDR / dt = 100 A / μs
-
9.9
ns
3.0
ns
1008
-
μC
Note 4: Pulse Test: Pulse Width ≤300μs, Duty Cycle 3 2%.
Note 5: Switching characteristics are independent of operating junction temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2 /5
Steady, keep you advance
WFY3P02
Fig. 1 On-State Characteristics
−Resistance vs. Drain Current and
Fig.3 On
On−
Fig.2 Transfer Current Characteristics
ward Voltage vs. Current
Fig.4 Diode For
Forw
Temperature
Fig.5 On-Resistance Variation vs Junction
Temperature
Fig.6 Gate Charge Characteristics
3 /5
Steady, keep you advance
WFY3P02
Fig.7 Resistive Switching Time Variation
vs. Gate Resistance
−to
−Source Leakage Current
Fig.9 Drain
Drain−
to−
vs. Voltage
Fig.8 Maximum Drain Current vs Case
Temperature
−Resistance vs. Drain Current and
Fig.10 On
On−
Temperature
4 /5
Steady, keep you advance
WFY3P02
T-23 Package Dimension
SO
SOT
5 /5
Steady, keep you advance