WFY3P02 Trench Power MOSFET ngle P−Channel, SO T−23 −20 V, Si Sin SOT Features ■ -3.2A, -20V, RDS(on)(Max 85mΩ)@VGS=-4.5V ■ −1.5 V Rated for Low Voltage Gate Drive ■ SOT-23 Surface Mount for Small Footprint ■ Single Pulse Avalanche Energy Rated ■ Halogen-free General Description D This Power MOSFET is produced using Winsemi’s advanced MOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for Load/Power Management for Portables and Computing, Charging Circuits and Battery Protection G S T-23 SO SOT Marking : P02YM Y :year ,M :months Absolute Maximum Ratings Symbol Parameter VDSS Drain Source Voltage ID Continuous Drain Current(Note 1) PD Total Power Dissipation(Note 1) ID Continuous Drain Current(Note 2) PD IDM Total Power Dissipation(Note 2) Drain Current Pulsed VGS Gate to Source Voltage ESD ESD Capability (Note 3) TJ, Tstg TL Junction and Storage Temperature Value Units -20 V Tc=25℃ −2.4 Tc=85℃ Tc=25℃ t=10s -1.7 -3.2 0.73 1.25 -1.8 -1.3 0.42 -7.5 ±8 V C=100pF,R S = 1500Ω 225 V -55~150 ℃ 260 ℃ Steady State t≤10s Steady State t≤10s Steady State Tc=25℃ Tc=25℃ Tc=85℃ Tc=25℃ Maximum lead Temperature for soldering purposes A W A W A Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Thermal Characteristics Symbol RQJA RQJA RQJA Parameter Thermal Resistance, Junction-to-Ambient(Note 1) Thermal Resistance, Junction-to-Ambient(Note 1) Thermal Resistance, Junction-to-Ambient(Note 2) Value Min Typ Max - - 170 110 300 Units ℃/W ℃/W ℃/W Note 1: Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) Note 2: Surface−mounted on FR4 board using the minimum recommended pad size. Note 3: ESD Rating Information: HBM Class 0 Re v. A Ma r .20 10 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. P02-1 WFY3P02 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current(Note 4) IGSS VGS = ±8 V, VDS = 0 V - - ±100 nA Drain cut−off current(Note 4) IDSS VDS = -16 V, VGS = 0 V - - -1 μA V(BR)DSS ID = -250 μA, VGS = 0 V -20 - - V VGS(th) VDS = VDS ID =-250 μA -0.40 -0.72 -1.5 V - 70 85 VGS = −2.5 V, ID = −1.3 A 90 120 VGS = −1.8 V, ID = −0.9 A 112 200 Drain−source breakdown voltage Gate threshold voltage VGS = −4.5 V, ID = −1.6 A Drain−source ON resistance RDS(ON) Forward Transconductance gfs VDS = −5.0 V, ID = −2.3 A - 75 - Input capacitance Ciss VDS = -10 V, - 675 - Crss VGS = 0 V, - 75 - Coss f = 1 MHz - 100 - tr VGS = −4.5 V, - 12.6 - ton VDS = −10 V, - 7.5 - ID = −1.6 A, - 21.0 - RG = 6.0 Ω - 30.2 - - 7.5 8.5 - 1.2 - Reverse transfer capacitance Output capacitance Rise time Switching time (Note 5) Turn−on time Fall time Turn−off time tf toff Total gate charge (gate−source plus Qg gate−drain) mΩ S pF ns VGS = −4.5 V, VDS = −10 V, nC ID = −1.6 A Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd - 2.2 - RG - 6.5 - Ω Reverse Recovery Charge Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - -2.4 A Pulse drain reverse current IDRP - - - -7.5 A Forward voltage (diode) VDSF - -0.82 -1.2 V Reverse recovery time trr - 12.8 15 ns Charge Time ta Discharge Time tb Reverse recovery charge Qrr IDR = -2.4A, VGS = 0 V IDR = -2.4A, VGS = 0 V, dIDR / dt = 100 A / μs - 9.9 ns 3.0 ns 1008 - μC Note 4: Pulse Test: Pulse Width ≤300μs, Duty Cycle 3 2%. Note 5: Switching characteristics are independent of operating junction temperature. This transistor is an electrostatic sensitive device Please handle with caution 2 /5 Steady, keep you advance WFY3P02 Fig. 1 On-State Characteristics −Resistance vs. Drain Current and Fig.3 On On− Fig.2 Transfer Current Characteristics ward Voltage vs. Current Fig.4 Diode For Forw Temperature Fig.5 On-Resistance Variation vs Junction Temperature Fig.6 Gate Charge Characteristics 3 /5 Steady, keep you advance WFY3P02 Fig.7 Resistive Switching Time Variation vs. Gate Resistance −to −Source Leakage Current Fig.9 Drain Drain− to− vs. Voltage Fig.8 Maximum Drain Current vs Case Temperature −Resistance vs. Drain Current and Fig.10 On On− Temperature 4 /5 Steady, keep you advance WFY3P02 T-23 Package Dimension SO SOT 5 /5 Steady, keep you advance