AO4406AL N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4406AL uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. VDS (V) = 30V ID = 12A (VGS = 10V) RDS(ON) < 11.5mΩ (VGS = 10V) RDS(ON) < 15.5mΩ (VGS = 4.5V) - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! D SOIC-8 D S S S G G D D D D G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current C C Repetitive avalanche energy L=0.1mH Power Dissipation B C TC=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Alpha & Omega Semiconductor, Ltd. ±20 V A 10 IDM 100 IAR 22 A EAR 24 mJ 3.1 PD TC=70°C Units V 12 ID TC=70°C Maximum 30 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4406AL Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Min Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V 1 5 VDS=0V, VGS= ±20V 100 Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 100 VGS=10V, ID=12A TJ=125°C VGS=4.5V, ID=10A gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current IS VDS=5V, ID=12A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=12A Units V TJ=55°C Static Drain-Source On-Resistance Max 30 VGS(th) RDS(ON) Typ 1.9 2.5 µA nA V A 9.5 11.5 14 17 12.5 15.5 45 0.75 mΩ mΩ S 1 V 4 A 610 760 910 pF 88 125 160 pF 40 70 100 pF 0.8 1.6 2.4 Ω 11 14 17 nC 5 6.6 8 nC 1.9 2.4 2.9 nC 3 4.2 nC 1.8 VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω 4.4 ns 9 ns 17 ns 6 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=12A, dI/dt=500A/µs 5.6 7 8 Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/µs 6.4 8 9.6 ns nC 2 A. The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. 2 FR-4 board with F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. Rev 0 : Oct-08 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4406AL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 10V 6V 80 25 4.5V 20 ID(A) 7V 60 ID (A) VDS=5V 5V 4V 40 15 10 3.5V 20 5 VGS=3V 0 0 1 2 3 4 125°C 0 1 5 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 18 Normalized On-Resistance 1.8 16 RDS(ON) (mΩ) 25°C VGS=4.5V 14 12 10 VGS=10V 8 VGS=10V ID=12A 1.6 1.4 17 VGS=4.5V 5 ID=10A 2 1.2 10 1 0.8 6 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18 Temperature (Note E) 30 1.0E+02 ID=12A 1.0E+01 25 125°C IS (A) RDS(ON) (mΩ) 40 1.0E+00 20 15 10 1.0E-01 1.0E-02 5 1.0E-04 0 1.0E-05 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Alpha & Omega Semiconductor, Ltd. 25°C 1.0E-03 25°C 2 125°C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AO4406AL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=15V ID=12A 1000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 600 400 Coss 200 0 Crss 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics 14 0 60 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000.0 50 TA=25°C 40 10µs TA=100°C 30 TA=150°C 20 TA=125°C 100.0 ID (Amps) ID(A), Peak Avalanche Current 800 10.0 RDS(ON) limited 100µs 1ms 10ms 100ms 1.0 TJ(Max)=150°C TA=25°C 0.1 10 10µs DC 10s 0.0 0 0.000001 0.1 0.00001 0.0001 0.001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability (Note C) 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1000 TA=25°C Power (W) 100 10 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4406AL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4406AL Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com