AO4406 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4406/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4406 and AO4406L are electrically identical. -RoHS Compliant -AO4406L is Halogen Free VDS (V) = 30V ID = 11.5A (VGS = 10V) RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 16.5mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain AF Current Pulsed Drain Current ID B B Repetitive Avalanche Energy L=0.3mH TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient AF A Maximum Junction-to-Ambient Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. Units V ±12 V 11.5 TA=70°C Avalanche Current B Power Dissipation Maximum 30 A 9.6 IDM 80 IAV 25 A EAV 94 mJ 3 PD TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 2.1 RθJA RθJL Typ 23 48 12 °C Max 40 65 16 Units °C/W °C/W °C/W www.aosmd.com AO4406 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.8 ID(ON) On state drain current VGS=4.5V, VDS=5V 60 TJ=55°C 100 19.2 VGS=4.5V, ID=10A 13.5 16.5 mΩ VGS=2.5V, ID=8A 19.5 26 mΩ 1 V 4.5 A 2300 pF 142 200 pF 0.8 1.8 Ω 18 24 VDS=5V, ID=10A Diode Forward Voltage IS=10A,VGS=0V IS Maximum Body-Diode Continuous Current 25 1630 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge S 201 0.4 13.5 VGS=4.5V, VDS=15V, ID=11.5A mΩ 38 0.83 DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance V A 16 TJ=125°C Forward Transconductance Rg 1.5 14 gFS Output Capacitance 1 nA 11.5 VSD Reverse Transfer Capacitance µA 5 VGS=10V, ID=12A Coss V 1 IGSS Crss Units 30 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max VDS=30V, VGS=0V IDSS RDS(ON) Typ pF 2.5 nC nC Qgd Gate Drain Charge 5.5 tD(on) Turn-On DelayTime 4 6 ns tr Turn-On Rise Time 5 7.5 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=15V, RL=1.2Ω, RGEN=3Ω nC 32 50 ns 5 10 ns IF=10A, dI/dt=100A/µs 18.7 24 Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs 12.5 15 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev9: May 2011 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 30 10V 4.5V 2.5V 3V 40 VDS=5V 25 20 ID(A) ID (A) 30 15 20 125°C 2V 10 25°C 10 5 VGS=1.5V 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 5 30 0.5 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 3 1.8 Normalized On-Resistance ID=10A 25 VGS=10V 1.6 VGS=2.5V RDS(ON) (mΩ ) 0 20 VGS=4.5V 15 10 VGS=10V 5 VGS=4.5V 1.4 VGS=2.5V 1.2 1 0 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 40 0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 VGS=0V ID=10A 1.0E+00 30 125°C 125°C IS (A) RDS(ON) (mΩ ) 1.0E-01 1.0E-02 20 25°C 25°C 1.0E-03 10 1.0E-04 1.0E-05 0 0.00 2.00 4.00 6.00 8.00 10.00 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 VSD 0.6 1.0 (Volts) 0.8 Figure 6: Body-Diode Characteristics 1.2 www.aosmd.com AO4406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 2500 VDS=15V ID=11.5A 2250 2000 Capacitance (pF) VGS (Volts) 4 3 2 1 1750 Ciss 1500 1250 1000 750 Coss Crss 500 250 0 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 24 0 100.0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 50 RDS(ON) limited 10µs 100µs 1ms ID (Amps) 10ms 0.1s 1s 1.0 30 20 10 10s TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C 40 Power (W) 10.0 0 DC 0.001 0.1 0.1 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 Zθ JA Normalized Transient Thermal Resistance 5 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=65°C/W 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000 www.aosmd.com AO4406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4 TA=25°C 60 tA = 50 40 Power Dissipation (W) ID(A), Peak Avalanche Current 70 L ⋅ ID BV − VDD 30 20 3 2 10s 1 SteadyState 10 0 0.00001 0 0.0001 Time in avalanche, tA (s) Figure 12: Avalanche capability Alpha & Omega Semiconductor, Ltd. 0.001 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note A) www.aosmd.com AO4406 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC Qgs Vds Qgd - DUT Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs L Isd + VDC Ig Alpha & Omega Semiconductor, Ltd. - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com