AOSMD AO4494

AO4494
30V N-Channel MOSFET
General Description
Product Summary
The AO4494 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is for PWM
applications.
VDS (V) = 30V
ID = 18A
(VGS = 10V)
RDS(ON) < 6.5mΩ
RDS(ON) < 9.5mΩ
(VGS = 10V)
(VGS = 4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current
TC=25°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH
TC=25°C
Power Dissipation B
TC=70°C
C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Alpha & Omega Semiconductor, Ltd.
±20
V
A
14
IDM
130
IAR
32
A
51
mJ
EAR
3.1
PD
Junction and Storage Temperature Range
Units
V
18
ID
TC=70°C
Maximum
30
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
W
2
RθJA
RθJL
Typ
28
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
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AO4494
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
IGSS
VGS(th)
ID(ON)
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Typ
30
1
TJ=125°C
5
Gate-Body leakage current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
1.5
VGS=10V, VDS=5V
130
VGS=10V, ID=18A
±100
nA
2.5
V
5.4
6.5
8.4
10.1
9.5
A
Static Drain-Source On-Resistance
VGS=4.5V, ID=16A
7.5
gFS
Forward Transconductance
VDS=5V, ID=18A
70
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
0.75
1270
VGS=0V, VDS=15V, f=1MHz
VGS=10V, VDS=15V, ID=18A
1590
mΩ
mΩ
S
1
V
3
A
1900
pF
170
240
310
pF
87
145
200
pF
0.8
1.5
2.3
Ω
24
30
36
nC
12
15
18
nC
4.2
5.2
6.2
nC
4.7
7.8
11
nC
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=18A, dI/dt=500A/µs
22
28
34
Qrr
Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs
19
24
30
Body Diode Reverse Recovery Time
µA
2
RDS(ON)
TJ=125°C
Units
V
VDS=30V, VGS=0V
Gate Threshold Voltage
On state drain current
Crss
Max
VGS=10V, VDS=15V, RL=0.83Ω,
RGEN=3Ω
6.7
ns
3.5
ns
22.5
ns
4
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
Rev1: Nov. 2010
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO4494
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140
100
10V
5V
120
VDS=5V
6V
4.5V
80
100
60
4V
ID(A)
ID (A)
7V
80
60
40
3.5V
40
125°C
20
20
25°C
VGS=3V
0
0
0
1
2
3
4
0
5
1
3
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
12
Normalized On-Resistance
1.8
10
RDS(ON) (mΩ )
2
VGS=4.5V
8
6
VGS=10V
4
1.6
VGS=10V
ID=18A
1.4
17
5
VGS=4.5V 2
ID=16A 10
1.2
1
0.8
2
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18
Temperature (Note E)
25
1.0E+02
ID=18A
1.0E+01
20
40
15
IS (A)
RDS(ON) (mΩ )
1.0E+00
125°C
1.0E-01
125°C
1.0E-02
10
25°C
1.0E-03
5
25°C
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO4494
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2200
10
2000
VDS=15V
ID=18A
Ciss
1800
Capacitance (pF)
VGS (Volts)
8
6
4
2
1600
1400
1200
1000
800
600
Coss
400
200
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
0
90.00
10µs
70.00
60.00
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000.0
TA=25°C
RDS(ON)
limited
80.00
100.0
10µs
TA=100°C
TA=150°C
50.00
TA=125°C
ID (Amps)
ID(A), Peak Avalanche Current
Crss
0
10.0
100µs
1ms
1.0
10ms
100ms
10s
DC
40.00
TJ(Max)=150°C
TA=25°C
0.1
30.00
0.0
20.00
0.000001
0.1
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
(Note C)
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1000
TA=25°C
Power (W)
100
10
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note F)
Alpha & Omega Semiconductor, Ltd.
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AO4494
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=40°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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AO4494
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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