WHXPCB AO4498

万和兴电子有限公司 www.whxpcb.com
AO4498
30V N-Channel MOSFET
General Description
Product Summary
The AO4498 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load
switch and battery protection applications.
VDS (V) = 30V
ID = 18A
(VGS = 10V)
RDS(ON) < 5.5mΩ
RDS(ON) < 7.5mΩ
(VGS = 10V)
(VGS = 4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
Repetitive avalanche energy L=0.1mH
TC=25°C
B
Power Dissipation
TC=70°C
C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Alpha & Omega Semiconductor, Ltd.
±20
V
A
14
IDM
140
IAR
42
A
88
mJ
EAR
3.1
PD
Junction and Storage Temperature Range
Units
V
18
ID
TC=70°C
Maximum
30
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
W
2
RθJA
RθJL
Typ
31
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
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AO4498
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
ID=250µA, VGS=0V
Min
Typ
30
36.5
VDS=30V, VGS=0V
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
1.3
VGS=10V, VDS=5V
140
TJ=55°C
5
VGS=10V, ID=18A
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=16A
100
nA
2.5
V
4.6
5.5
6.6
8
6
7.5
A
gFS
Forward Transconductance
VDS=5V, ID=18A
53
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
1910
VGS=0V, VDS=15V, f=1MHz
µA
1.8
VSD
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Units
V
1
IDSS
ID(ON)
Max
mΩ
mΩ
S
1
V
4
A
2300
pF
316
pF
227
pF
1.4
2.1
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
37
44.5
nC
Qg(4.5V) Total Gate Charge
18
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=18A
0.7
nC
4.8
nC
11
nC
8.1
ns
VGS=10V, VDS=15V, RL=0.83Ω,
RGEN=3Ω
8.6
ns
29
ns
8
ns
IF=18A, dI/dt=500A/µs
14
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs
17
40
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
Rev 1 : Nov. 2010
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4498
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140
120
VDS=5V
70
5V
60
100
6V
50
4V
80
ID(A)
ID (A)
80
4.5V
10V
60
40
30
40
20
VGS=3.5V
20
10
0
0
0
1
2
3
4
125°
C
0
5
1
10
4
5
Normalized On-Resistance
1.8
8
RDS(ON) (mΩ )
3
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
6
4
VGS=10V
2
VGS=10V
ID=18A
1.6
1.4
17
5
VGS=4.5V 2
ID=16A 10
1.2
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18
Temperature (Note E)
14
1.0E+02
ID=18A
12
1.0E+01
40
1.0E+00
8
IS (A)
10
RDS(ON) (mΩ )
2
25°C
125°C
125°C
1.0E-01
1.0E-02
6
25°C
1.0E-03
4
25°C
2
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO4498
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3000
VDS=15V
ID=18A
2500
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2000
1500
1000
2
500
0
Crss
0
0
10
20
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
40
120
0
1000.0
100
TA=25°C
80
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
10µs
TA=100°
100µs
10.0
60
TA=150°
40
1ms
10ms
100ms
10s
1.0
0.1
20
30
RDS(ON)
limited
100.0
ID (Amps)
ID(A), Peak Avalanche Current
Coss
DC
TJ(Max)=150°C
TA=25°C
TA=125°
0.0
0
0.000001
0.1
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1000
TJ(Max)=150°C
TA=25°C
Power (W)
100
10
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4498
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=40°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note F)
Q
Alpha & Omega Semiconductor, Ltd.
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AO4498
万和兴电子有限公司 www.whxpcb.com
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
Vgs
10%
Vgs
td(on)
tr
td(off)
ton
tf
toff
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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