AOD2N60 2A, 600V N-Channel MOSFET General Description Features The AOD2N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS (V) = 700V @ 150°C ID = 2A RDS(ON) < 4.4Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested! TO-252 D-PAK Top View Bottom View D G S D G G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Units V ±30 V TC=25°C TC=100°C Pulsed Drain Current Avalanche Current Maximium 600 C C 2.0 A ID IDM 1.4 IAR 2.0 A 8.0 Repetitive avalanche energy C EAR 60 mJ Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25°C B Power Dissipation Derate above 25oC EAS dv/dt 120 5 56.8 mJ V/ns W Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter TJ, TSTG 0.45 -50 to 150 W/ oC °C 300 °C Maximum Junction-to-Ambient A,G A Maximum Case-to-Sink Maximum Junction-to-Case D,F Alpha & Omega Semiconductor, Ltd. PD TL Symbol RθJA RθCS RθJC Typical 45 Maximum 55 Units - 0.5 1.8 2.2 °C/W °C/W °C/W www.aosmd.com AOD2N60 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol Conditions Min ID=250μA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature /∆TJ Coefficient IDSS Zero Gate Voltage Drain Current ID=250μA, VGS=0V o VDS=480V, TJ=125°C 10 Gate-Body leakage current VDS=0V, VGS=±30V VDS=VGS, ID=250μA RDS(ON) gFS Static Drain-Source On-Resistance Forward Transconductance VSD IS Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed Current Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr μA 100 nA 4 5 V VGS=10V, ID=0.65A 3.6 4.4 VDS=40V, ID=0.65A 3.5 Ω S 1 V 2 A 8 A 3 0.79 DYNAMIC PARAMETERS Ciss Input Capacitance Crss V/ C 0.56 1 Gate Threshold Voltage Rg V VDS=600V, VGS=0V VGS(th) Output Capacitance 700 ID=250μA, VGS=0V, TJ=125°C IGSS Coss V VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=480V, ID=2A 215 270 325 pF 23 29 35 pF 2.2 2.8 3.4 pF 3.5 4.4 6.6 Ω 7.8 9.5 11 nC 1.5 1.9 2 nC 3.9 4.7 6 nC VGS=10V, VDS=300V, ID=2A, RG=25Ω 17.2 ns 14.3 ns 27 ns 17 IF=2A,dI/dt=100A/μs,VDS=100V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/μs,VDS=100V ns 128 154 185 0.6 0.8 0.96 ns μC A: The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. L=60mH, IAS=2A, VDD=50V, RG=10Ω, Starting TJ=25°C Rev0: Oct. 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKE-50 to 175 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD2N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5.0 10 10V 6.5V 6V ID(A) ID (A) 3.0 2.0 1 25°C 125°C VGS=5.5V 1.0 0.0 0.1 0 5 10 15 20 25 30 2 VDS (Volts) Fig 1: On-Region Characteristics 4 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics 6.5 2.5 Normalized On-Resistance 6.0 5.5 RDS(ON) (Ω) -55°C VDS=40V 4.0 VGS=10V 5.0 4.5 4.0 3.5 2.0 VGS=10V ID=1A 1.5 1.0 0.5 3.0 0 1 2 3 4 0.0 -100 5 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.2 1.0E+00 1.1 IS (A) BVDSS (Normalized) -50 1 125°C 1.0E-01 1.0E-02 25°C -50 to 175 0.9 1.0E-03 0.8 -100 1.0E-04 -50 0 50 o 100 150 200 TJ ( C) Figure 5: Break Down vs. Junction Temperature Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD2N60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 1000 Capacitance (pF) 12 VGS (Volts) Ciss VDS=480V ID=2A 9 6 100 Coss 10 3 Crss 1 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 10μs 100μs 1.0 1ms DC 0.1 0.1s 10ms TJ(Max)=150°C TC=25°C 10 100 1000 VDS (Volts) 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 400 200 0.0 1 TJ(Max)=150°C TA=25°C 600 Power (W) RDS(ON) limited ID (Amps) 1 800 10.0 ZθJC Normalized Transient Thermal Resistance 0 14 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=2.2°C/W 1 0.1 -50 to 175 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD2N60 2.5 50 2.0 Current rating ID(A) Power Dissipation (W) 60 40 30 20 1.5 1.0 0.5 10 0 0.0 0 25 50 75 100 125 150 0 25 TCASE (°C) Figure 12: Power De-rating (Note B) 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note B) 400 TJ(Max)=175°C TA=25°C Power (W) 300 200 100 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Case (Note G) ZθJC Normalized Transient Thermal Resistance 10 1 100 1000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=55°C/W 0.1 PD 0.01 -50 to 175 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD2N60 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs Rg + VDC 90% Vdd - 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC Rg - Vdd I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Qrr = - Idt Vds + DUT Vds - Isd Vgs L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com