AOL1444 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1444 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. VDS (V) = 30V ID = 85A (V GS = 10V) RDS(ON) < 4.3mΩ (VGS = 10V) RDS(ON) < 6.3mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested -RoHS Compliant -Halogen and Antimony Free Green Device* Ultra SO-8TM Top View D D S Bottom tab connected to drain G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G TC=25°C G TC=100°C B Repetitive avalanche energy L=0.1mH TC=25°C B Power Dissipation A Maximum 30 Units V ±20 V 85 ID IDM Pulsed Drain Current Continuous Drain TA=25°C Current G TA=70°C C Avalanche Current Power Dissipation S G TC=100°C TA=25°C TA=70°C 17 C A IDSM IAR 14 30 A EAR 45 mJ 100 PD W 50 2.1 PDSM TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Case C Alpha & Omega Semiconductor, Ltd. A 73 200 W 1.3 -55 to 175 Symbol RθJA RθJC Typ 19.6 48 1 °C Max 25 60 1.5 Units °C/W °C/W °C/W www.aosmd.com AOL1444 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Max 0.005 1 30 VDS=24V, VGS=0V 5 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.45 ID(ON) On state drain current VGS=10V, VDS=5V 200 VGS=10V, ID=20A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A 100 nA 3 V 3.2 4.3 4.3 5.2 4.9 6.3 mΩ 1 V 85 A 7000 pF A Forward Transconductance VDS=5V, ID=20A 85 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 6070 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz µA 1.8 gFS DYNAMIC PARAMETERS Input Capacitance Ciss Units V TJ=55°C IGSS RDS(ON) Typ mΩ S 638 pF 375 pF 0.45 0.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 96.4 115 nC Qg(4.5V) Total Gate Charge 46.4 55 nC VGS=4.5V, VDS=15V, ID=20A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 13.6 nC 15.6 nC 15.7 21 ns 14.2 21 ns 55.5 75 ns 14 21 ns 31 38 24 29 ns nC A: The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev1. July 2008 * This device is guaranteed green after date code 8P11 (June 1ST 2008) Revision 2: June 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1444 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 VDS=5V 10V 50 50 4.5V 40 3.5V 30 ID(A) ID(A) 40 VGS=3V 20 125°C 30 20 25°C 10 10 0 0 0 1 2 3 4 VDS (Volts) Figure 1: On-Region Characteristics 5 1 6.0 2 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics 4 1.8 5.5 Normalized On-Resistance VGS=4.5V 5.0 RDS(ON) (mΩ ) 1.5 4.5 4.0 VGS=10V 3.5 3.0 2.5 2.0 ID=20A 1.6 1.4 VGS=4.5V VGS=10V 1.2 1 0.8 0 20 40 60 80 100 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 14 ID=20A 1.0E+01 12 125°C 1.0E+00 IS (A) RDS(ON) (mΩ ) 10 TC=100°C 8 TA=25°C 125°C 1.0E-01 1.0E-02 25°C 6 1.0E-03 25°C -55 to 175 4 1.0E-04 1.0E-05 2 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 www.aosmd.com AOL1444 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8000 10 VDS=15V ID=20A Ciss 7000 Capacitance (pF) VGS (Volts) 8 6 4 2 6000 5000 4000 3000 Coss 2000 Crss 1000 0 0 0 20 40 60 80 100 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 10µs TJ(Max)=175°C TC=25°C 800 100 RDS(ON) limited 10 Power (W) ID (Amps) 100µs 1ms 10ms DC TJ(Max)=175°C TC=25°C 1 400 200 0.1 0.1 600 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=1.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 TC=100°C TA=25°C PD 0.1 -55 to 175 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1444 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 TA=25°C 100 80 Power Dissipation (W) ID(A), Peak Avalanche Current 100 60 40 20 0 0.00001 80 60 40 20 0 0.0001 0.001 0.01 0 25 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) 100 100 80 80 60 Power (W) Current rating ID(A) 50 40 20 60 40 20 0 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B) 0 0.01 175 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 Ton T 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1444 c Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs L Isd + VDC Ig Alpha & Omega Semiconductor, Ltd. - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com