AOD4136 TM N-Channel SDMOS POWER Transistor General Description Features The AOD4136 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge. The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for both DC-DC and load switch applications. VDS (V) = 25V ID = 25A (VGS = 10V) RDS(ON) < 11mΩ (VGS = 10V) RDS(ON) <19mΩ (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested! -RoHS Compliant -Halogen Free* TO-252 D-PAK Top View D D Bottom View G G S G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current B,H C Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B C A ±20 V TC=100°C Junction and Storage Temperature Range Maximum Junction-to-Case F Alpha & Omega Semiconductor, Ltd. 20 100 IAR 17 EAR 15 mJ 15 W 2.1 1.3 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State A 30 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G A,G Maximum Junction-to-Ambient ID IDM PD TA=25°C Power Dissipation Units V 25 TC=100°C Pulsed Drain Current Maximum 25 RθJA RθJC Typ 17.4 50 4 °C Max 25 60 5 Units °C/W °C/W °C/W www.aosmd.com AOD4136 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 10 TJ=55°C 100 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 100 ±100 VGS=10V, ID=20A TJ=125°C 32 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.71 DYNAMIC PARAMETERS Ciss Input Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=12.5V, ID=20A 2.4 nA V mΩ S 1 V 20 A 734 VGS=0V, VDS=12.5V, f=1MHz µA A 19 VSD Reverse Transfer Capacitance 11 16 IS Output Capacitance 9 15 VDS=5V, ID=20A Crss 2.5 13 Forward Transconductance Coss 1.9 VGS=4.5V, ID=15A gFS Units V VDS=25V, VGS=0V Static Drain-Source On-Resistance Max 25 VGS(th) RDS(ON) Typ pF 174 pF 97 pF 3.6 5.4 Ω 12.9 16.8 nC 6.2 8.1 nC 2.2 nC Gate Drain Charge 4 nC Turn-On DelayTime 6 ns 11.2 ns 19.6 ns VGS=10V, VDS=12.5V, RL=0.5Ω, RGEN=3Ω tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, dI/dt=300A/µs 12 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs 11 Body Diode Reverse Recovery Time 9.6 ns 16 ns nC A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the deviceTBD mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g. TBD G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. The maximum current rating is limited by bond-wires. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev1: Oct 2008 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4136 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 100 VDS=5V 10V 60 4.5V 40 4.0V 40 ID(A) ID (A) 50 6.0V 80 30 100 20 ` 125°C VGS=3.5V 20 10 25°C 0 0 0 1 2 3 4 5 1 VDS (Volts) Figure 1: On-Region Characteristics 4 5 Normalized On-Resistance 1.6 16 RDS(ON) (mΩ ) 3 VGS(Volts) Figure 2: Transfer Characteristics 18 VGS=4.5V 14 12 10 VGS=10V 8 VGS=10V ID=20A 1.4 VGS=4.5V ID=15A 1.2 1 0.8 6 0 5 10 15 20 25 25 30 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 40 150 ID=20A 35 10 30 1 25 0.1 IS (A) RDS(ON) (mΩ ) 2 20 125°C mJ 125°C 0.01 25°C 0.001 15 10 0.0001 25°C 0.00001 5 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD4136 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=12.5V ID=20A 1000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 800 600 100 400 Coss 2 200 0 Crss 0 0 3 6 9 12 15 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 TJ(Max)=175°C TC=25°C RDS(ON) limited 100 10µs 10 100µs 1 1ms 10ms 100ms DC Power (W) ID (Amps) 25 10000 1000 TJ(Max)=175°C TC=25°C 0.1 0.1 1 10 D=Ton/T TJ,PK=Tc+PDM.ZθJC.RθJC RθJC=5°C/W 100 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 1000 10 0.00001 100 VDS (Volts) Zθ Jc Normalized Transient Thermal Resistance 20 VDS (Volts) Figure 8: Capacitance Characteristics 150 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse mJ 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4136 35 30 30 25 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 15 10 20 15 100 10 5 5 0 0 0 25 50 75 100 125 150 175 0 TCASE (°C) Figure 12: Power De-rating (Note B) 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Current De-rating (Note B) 1000 Power (W) TJ(Max)=150°C TA=25°C 100 10 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 100 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) Zθ JA Normalized Transient Thermal Resistance 10 150 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD 0.01 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 Ton 1 T 10 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4136 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com