AOSMD AOD4187

AOD4187
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD4187 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
With the excellent thermal resistance of the DPAK
package, this device is well suited for high current load
applications
VDS (V) = -40V
ID = -45A
RDS(ON) < 17mΩ
RDS(ON) < 23mΩ
(VGS = -10V)
(VGS = -10V)
(VGS = -4.5V)
-RoHS Compliant
-Halogen Free*
100% UIS Tested!
100% Rg Tested!
TO-252
D-PAK
Top View
D
D
Bottom View
G
S
G
G
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
±20
V
C
ID
-30
IDM
-100
TC=25°C
Continuous Drain
Current
Units
V
-45
TC=100°C
Pulsed Drain Current
Maximum
-40
A
-9
IDSM
-7
C
IAR
-36
A
Repetitive avalanche energy L=0.1mH C
TC=25°C
EAR
65
mJ
Avalanche Current
TC=100°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
TA=25°C
Alpha & Omega Semiconductor, Ltd.
2.5
W
1.6
TJ, TSTG
-55 to 175
Symbol
t ≤ 10s
Steady-State
Steady-State
W
30
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
60
PD
RθJA
RθJC
Typ
15
41
2
°C
Max
20
50
2.5
Units
°C/W
°C/W
°C/W
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AOD4187
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-40
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.7
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-100
TJ=55°C
-5
VGS=-10V, ID=-12A
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-8A
gFS
Forward Transconductance
VDS=-5V, ID=-12A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Max
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Units
V
VDS=-40V, VGS=0V
IDSS
RDS(ON)
Typ
µA
±100
nA
-1.9
-3
V
14
17
21
26
18
23
A
40
-0.7
mΩ
S
-1
V
-50
A
1960
2350
2850
pF
185
240
320
pF
130
185
260
pF
2
5.5
11
Ω
SWITCHING PARAMETERS
Qg(-10V) Total Gate Charge
35
42
50
nC
Qg(-4.5V) Total Gate Charge
16
20
25
nC
5.5
6.6
8
nC
7
9.7
14
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=0V, VDS=-20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-20V, ID=-12A
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=-12A, dI/dt=500A/µs
14
17
21
Qrr
Body Diode Reverse Recovery Charge IF=-12A, dI/dt=500A/µs
40
49
60
VGS=-10V, VDS=-20V, RL=1.6Ω,
RGEN=3Ω
9.6
ns
29
ns
56
ns
19.2
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows i t.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.The SOA curve provides a single pulse rating .
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev 1: Oct-2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
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AOD4187
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
50
-6V
-10V
-5V
80
VDS=-5V
40
-4.5V
60
30
-ID(A)
-ID(A)
-4V
40
20
20
10
125°C
VGS=-3.5V
25°C
0
0
0
1
2
3
4
-VDS (Volts)
Figure 1: On-Region Characteristics
5
1.5
26
2.5
3
3.5
4
-VGS(Volts)
Figure 2: Transfer Characteristics
4.5
Normalized On-Resistance
2
22
RDS(ON) (mΩ )
2
18
VGS=-4.5V
14
VGS=-10V
10
6
1.8
VGS=-10V
ID=-12A
1.6
1.4
VGS=-4.5V
ID=-8A
1.2
1
0.8
0.6
0
5
10
15
20
25
30
0
25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
38
100
ID=-12A
34
10
30
125°C
22
-IS (A)
RDS(ON) (mΩ )
1
125°C
26
TC=100°C
18
TA=25°C
0.1
0.01
25°C
14
25°C
0.001
10
-55 to 175
6
0.0001
2
0.00001
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
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AOD4187
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3200
10
VDS=-20V
ID=-12
A
Ciss
2800
Capacitance (pF)
-VGS (Volts)
8
6
4
2
2400
2000
1600
1200
Crss
800
Coss
400
0
0
0
5
10
15
20
25
30
35
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
45
0
1000
5
10
15
20
25
30
35
-VDS (Volts)
Figure 8: Capacitance Characteristics
1000
TJ(Max)=175°C
TC=25°C
100
10µs
RDS(ON)
limited
10
100µs
1ms
DC
1
0.1
10ms
Power (W)
-ID (Amps)
40
100
TJ(Max)=175°C
TC=25°C
0.01
0.01
0.1
1
10
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
10
1E-05 1E-04 0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
TC=100°C
TA=25°C
PD
0.1
-55 to 175
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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AOD4187
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
60
100
Power Dissipation (W)
-ID(A), Peak Avalanche Current
120
TA=25°C
80
60
TA=100°C
TA=150°C
TA=125°C
40
20
50
40
30
20
10
0
0.000001
0
0.00001
0.0001
0.001
0
25
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
50
75
100
60
150
175
10000
TJ(Max)=150°C
TA=25°C
50
1000
40
Power (W)
Current rating -ID(A)
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
30
20
100
10
10
0
0
25
50
75
100
125
150
1
1E-04 0.001 0.01
175
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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AOD4187
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgs
Vds
Qgd
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
td(on)
Vgs
-
DUT
Vgs
td(off)
tr
tf
90%
Vdd
VDC
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
EAR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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