AON7702A 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AON7702A uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. VDS 30V 36A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 10mΩ RDS(ON) (at VGS = 4.5V) < 13mΩ 100% UIS Tested 100% Rg Tested DFN 3x3A Top View D Bottom View Top View 1 8 2 7 3 6 4 5 SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Continuous Drain Current C V A 80 13.5 IDSM TA=70°C ±12 22 IDM TA=25°C Units V 36 ID TC=100°C Maximum 30 A 11 Avalanche Current C IAS, IAR 15 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 11 mJ Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C Rev 1: Feb. 2011 3.1 Steady-State Steady-State RθJA RθJC www.aosmd.com W 2 TJ, TSTG Symbol t ≤ 10s W 9 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 23 PD -55 to 150 Typ 30 60 4.5 °C Max 40 75 5.4 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=125°C 100 Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 80 100 nA 2.1 V 8.2 10 12.5 15 VGS=4.5V, ID=11A 9.9 13 Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=13A 80 VSD Diode Forward Voltage IS=1A,VGS=0V 0.4 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance mA 1.65 VGS=10V, ID=13A Output Capacitance Units V 0.5 IGSS Coss Max 30 VDS=30V, VGS=0V VGS(th) RDS(ON) Typ mΩ mΩ S 0.7 V 30 A 930 1170 1400 pF VGS=0V, VDS=15V, f=1MHz 90 128 170 pF 45 89 125 pF VGS=0V, VDS=0V, f=1MHz 0.7 1.4 2.1 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 16 20 24 nC Qg(4.5V) Total Gate Charge 7 8.7 10.5 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=15V, ID=13A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=13A, dI/dt=500A/µs VGS=10V, VDS=15V, RL=1.2Ω, RGEN=3Ω 3.2 nC 3 nC 6 ns 2.4 ns 23 ns 4 IF=13A, dI/dt=500A/µs ns 5.5 7 8.5 5 6.5 8 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: Feb. 2011 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 35 35 10V 30 VDS=5V 2.75V 30 25 20 20 ID(A) ID (A) 3V 25 15 15 2.5V 10 10 125°C 25°C 5 5 VGS=2.25V 0 0 0 1 2 3 4 1.5 5 2 2.25 2.5 2.75 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 12 Normalized On-Resistance 2 11 RDS(ON) (mΩ ) 1.75 VGS=4.5V 10 9 VGS=10V 8 7 1.8 VGS=10V ID=13A 1.6 1.4 VGS=4.5V ID=11A 1.2 1 0.8 6 1 6 11 16 21 0 26 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+02 25 1.0E+01 ID=13A 20 125°C 40 125°C 15 IS (A) RDS(ON) (mΩ ) 1.0E+00 1.0E-01 1.0E-02 10 25°C 25°C 1.0E-03 5 1.0E-04 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1: Feb. 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 1.0 Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=15V ID=13A Capacitance (pF) VGS (Volts) Ciss 1200 8 6 4 900 600 Crss 300 2 Coss 0 0 0 5 10 15 20 0 25 10 20 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 200 1000.0 10µs 10µs 100.0 RDS(ON) limited 10.0 160 TJ(Max)=150°C TC=25°C 100µs 1.0 1ms 10ms DC TJ(Max)=150°C TC=25°C 0.1 Power (W) ID (Amps) 30 17 5 2 10 120 80 40 0.0 0 0.01 0.1 1 10 100 VDS (Volts) 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=5.4°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: Feb. 2011 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100.0 25 Power Dissipation (W) IAR (A) Peak Avalanche Current TA=25°C TA=100°C TA=150°C TA=125°C 20 15 10 5 0 10.0 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 40 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 35 TA=25°C 1000 30 Power (W) Current rating ID(A) 150 25 20 15 17 5 2 10 100 10 10 5 1 0.00001 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 0.001 0.1 10 150 0 18 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 40 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 1: Feb. 2011 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 1: Feb. 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6