AOSMD AON7702A

AON7702A
30V N-Channel MOSFET
SRFET
General Description
TM
Product Summary
SRFETTM AON7702A uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications.
VDS
30V
36A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 10mΩ
RDS(ON) (at VGS = 4.5V)
< 13mΩ
100% UIS Tested
100% Rg Tested
DFN 3x3A
Top View
D
Bottom View
Top View
1
8
2
7
3
6
4
5
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
C
V
A
80
13.5
IDSM
TA=70°C
±12
22
IDM
TA=25°C
Units
V
36
ID
TC=100°C
Maximum
30
A
11
Avalanche Current C
IAS, IAR
15
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
11
mJ
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
TA=25°C
Rev 1: Feb. 2011
3.1
Steady-State
Steady-State
RθJA
RθJC
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W
2
TJ, TSTG
Symbol
t ≤ 10s
W
9
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
23
PD
-55 to 150
Typ
30
60
4.5
°C
Max
40
75
5.4
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=125°C
100
Gate-Body leakage current
VDS=0V, VGS= ±12V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
80
100
nA
2.1
V
8.2
10
12.5
15
VGS=4.5V, ID=11A
9.9
13
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=13A
80
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.4
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
mA
1.65
VGS=10V, ID=13A
Output Capacitance
Units
V
0.5
IGSS
Coss
Max
30
VDS=30V, VGS=0V
VGS(th)
RDS(ON)
Typ
mΩ
mΩ
S
0.7
V
30
A
930
1170
1400
pF
VGS=0V, VDS=15V, f=1MHz
90
128
170
pF
45
89
125
pF
VGS=0V, VDS=0V, f=1MHz
0.7
1.4
2.1
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
16
20
24
nC
Qg(4.5V) Total Gate Charge
7
8.7
10.5
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=10V, VDS=15V, ID=13A
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=13A, dI/dt=500A/µs
VGS=10V, VDS=15V, RL=1.2Ω,
RGEN=3Ω
3.2
nC
3
nC
6
ns
2.4
ns
23
ns
4
IF=13A, dI/dt=500A/µs
ns
5.5
7
8.5
5
6.5
8
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: Feb. 2011
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
35
10V
30
VDS=5V
2.75V
30
25
20
20
ID(A)
ID (A)
3V
25
15
15
2.5V
10
10
125°C
25°C
5
5
VGS=2.25V
0
0
0
1
2
3
4
1.5
5
2
2.25
2.5
2.75
3
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
12
Normalized On-Resistance
2
11
RDS(ON) (mΩ )
1.75
VGS=4.5V
10
9
VGS=10V
8
7
1.8
VGS=10V
ID=13A
1.6
1.4
VGS=4.5V
ID=11A
1.2
1
0.8
6
1
6
11
16
21
0
26
25
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+02
25
1.0E+01
ID=13A
20
125°C
40
125°C
15
IS (A)
RDS(ON) (mΩ )
1.0E+00
1.0E-01
1.0E-02
10
25°C
25°C
1.0E-03
5
1.0E-04
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: Feb. 2011
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0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
1.0
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
VDS=15V
ID=13A
Capacitance (pF)
VGS (Volts)
Ciss
1200
8
6
4
900
600
Crss
300
2
Coss
0
0
0
5
10
15
20
0
25
10
20
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
200
1000.0
10µs 10µs
100.0
RDS(ON)
limited
10.0
160
TJ(Max)=150°C
TC=25°C
100µs
1.0
1ms
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
Power (W)
ID (Amps)
30
17
5
2
10
120
80
40
0.0
0
0.01
0.1
1
10
100
VDS (Volts)
0.0001
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=5.4°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: Feb. 2011
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100.0
25
Power Dissipation (W)
IAR (A) Peak Avalanche Current
TA=25°C
TA=100°C
TA=150°C
TA=125°C
20
15
10
5
0
10.0
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
40
25
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
35
TA=25°C
1000
30
Power (W)
Current rating ID(A)
150
25
20
15
17
5
2
10
100
10
10
5
1
0.00001
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.001
0.1
10
150
0
18
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
40
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1: Feb. 2011
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 1: Feb. 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6