AOD418/AOI418 30V N-Channel MOSFET General Description Product Summary The AOD418/AOI418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications. VDS 30V 36A ID (at VGS= 10V) RDS(ON) (at VGS= 10V) < 7.5mΩ RDS(ON) (at VGS = 4.5V) < 11mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK TO251A IPAK Top View Bottom View D Bottom View Top View D D S G G S G G D Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=25°C Pulsed Drain Current C S Units V V A 28 125 13.5 IDSM TA=70°C D G 36 IDM TA=25°C Continuous Drain Current S Maximum 30 ±20 ID TC=100°C S A 10.5 Avalanche Current C IAS, IAR 27 A Avalanche energy L=0.1mH C EAS, EAR 36 mJ TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 0: February 2011 2.5 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.6 TJ, TSTG Symbol t ≤ 10s W 25 PDSM TA=70°C Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case 50 PD -55 to 175 Typ 16 41 2.5 °C Max 20 50 3 Units °C/W °C/W °C/W Page 1 of 6 AOD418/AOI418 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 125 TJ=55°C 5 ±100 VGS=10V, ID=20A 7.5 8.5 11 mΩ VGS=10V, ID=20A TO251A 6.7 8 mΩ VGS=4.5V, ID=20A TO251A 9 11.5 mΩ IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous CurrentG TJ=125°C VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge V A 11.5 Forward Transconductance Output Capacitance nA 2.5 9.5 VSD Coss 1.95 µA 6.2 TO252 VGS=4.5V, ID=20A TO252 gFS IS Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 IDSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A mΩ 63 0.72 S 1 V 36 A 920 1150 1380 pF 125 180 235 pF 60 105 150 pF 0.55 1.1 1.65 Ω 16 20 24 nC 7.6 9.5 11 Qgs Gate Source Charge 2.7 nC Qgd Gate Drain Charge 5 nC tD(on) Turn-On DelayTime 6.5 ns tr Turn-On Rise Time 2 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 7 8.7 10.5 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 11 13.5 16 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 17 ns 3.5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: February 2011 www.aosmd.com Page 2 of 6 AOD418/AOI418 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 100 10V 120 80 100 4.5V 60 80 ID(A) ID (A) VDS=5V 5V 7V 4V 60 40 40 125°C 3.5V 20 20 VGS=3V 0 0 1 2 3 4 25°C 0 1 5 12 2 2.5 3 3.5 4 4.5 5 5.5 Normalized On-Resistance 2 10 RDS(ON) (mΩ) 1.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 8 6 VGS=10V 4 2 VGS=10V ID=20A 1.8 1.6 17 5 2 VGS=4.5V 10 1.4 1.2 ID=20A 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18 Temperature (Note E) 25 1.0E+02 ID=20A 1.0E+01 20 40 15 125°C IS (A) RDS(ON) (mΩ) 1.0E+00 10 25°C 125°C 1.0E-01 25°C 1.0E-02 1.0E-03 5 1.0E-04 0 1.0E-05 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: February 2011 10 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOD418/AOI418 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1600 VDS=15V ID=20A 1400 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 1200 1000 800 600 400 2 Coss 200 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 0 20 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 RDS(ON) limited 10µs 100µs 1ms 10ms DC 1.0 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 TJ(Max)=175°C TC=25°C 160 Power (W) 10µs 100.0 10.0 5 200 1000.0 -ID (Amps) Crss 0 17 5 2 10 120 80 40 1 -VDS (Volts) 10 100 0 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=3°C/W 40 PD 0.1 Single Pulse 0.01 0.00001 0.0001 0.001 Ton 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: February 2011 www.aosmd.com Page 4 of 6 AOD418/AOI418 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 100 TA=150°C Power Dissipation (W) -IAR (A) Peak Avalanche Current TA=25°C TA=100°C 50 40 30 20 10 TA=125°C 10 1 0 0 10 100 1000 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 175 100 50 TA=25°C 80 Power (W) 40 Current rating ID(A) 25 30 20 60 17 5 2 10 40 20 10 0 0.00001 0 0 ZθJA Normalized Transient Thermal Resistance 10 1 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) 0.001 0.1 10 1000 0 Pulse Width (s) 18 175 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=50°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: February 2011 www.aosmd.com Page 5 of 6 AOD418/AOI418 Gate Charge Test Circuit & Waveform Vgs Qg -10V - + VDC - Qgs Vds Qgd + VDC DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton td(on) Vgs VDC - DUT Vgs Rg td(off) tr tf 90% Vdd + Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id VDC - Vgs Vgs + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 0: February 2011 Vgs L -Isd + Vdd VDC - -I F t rr dI/dt -I RM Vdd -Vds www.aosmd.com Page 6 of 6