AOSMD AOI4185

AOD4185/AOI4185
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD4185/AOI4185 uses advanced trench
technology to provide excellent RDS(ON) and low gate
charge. With the excellent thermal resistance of the
DPAK/IPAK package, this device is well suited for high
current applications.
VDS (V) = -40V
ID = -40A
(VGS = -10V)
RDS(ON) < 15mΩ (VGS = -10V)
RDS(ON) < 20mΩ (VGS = -4.5V)
100% UIS Tested!
100% Rg Tested!
-RoHS Compliant
-Halogen Free*
TO252
DPAK
Top View
TO-251A
IPAK
Bottom View
Top View
Bottom View
D
D
D
D
D
G
S
G
S
S
G
G
D
Absolute Maximum Ratings TC=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current B,H
Pulsed Drain Current
TC=100°C
Avalanche Current C
Power Dissipation B
C
Units
V
±20
V
TA=70°C
D,F
Alpha & Omega Semiconductor, Ltd.
IDM
-115
IAR
-42
mJ
88
31
W
2.5
1.6
TJ, TSTG
-55 to 175
Symbol
t ≤ 10s
Steady-State
Steady-State
A
62.5
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Junction-to-Ambient A,G
-31
PD
TC=100°C
Maximum Junction-to-Case
D
Maximum
-40
ID
EAR
TA=25°C
Power Dissipation A
S
G
-40
C
Repetitive avalanche energy L=0.1mH
TC=25°C
S
RθJA
RθJC
Typ
15
41
2
°C
Max
20
50
2.4
Units
°C/W
°C/W
°C/W
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AOD4185/AOI4185
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-40
-1
TJ=55°C
-5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.7
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-115
±100
VGS=-10V, ID=-20A
Static Drain-Source On-Resistance
TJ=125°C
50
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
-0.72
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate resistance
VGS=0V, VDS=-20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge
Qg (-4.5V) Total Gate Charge
Qgs
Gate Source Charge
VGS=-10V, VDS=-20V,
ID=-20A
2.5
Units
µA
nA
V
A
20
VSD
Rg
15
23
IS
Reverse Transfer Capacitance
12.5
16
VDS=-5V, ID=-20A
Output Capacitance
-3
19
Forward Transconductance
Crss
-1.9
VGS=-4.5V, ID=-15A
gFS
Coss
Max
V
VDS=-40V, VGS=0V
VGS(th)
RDS(ON)
Typ
mΩ
S
-1
V
-20
A
2550
pF
280
pF
190
pF
4
6
Ω
42
55
nC
18.6
7
nC
Qgd
Gate Drain Charge
8.6
nC
tD(on)
Turn-On DelayTime
9.4
ns
tr
Turn-On Rise Time
20
ns
tD(off)
Turn-Off DelayTime
55
ns
tf
trr
Body Diode Reverse Recovery Time
IF=-20A, dI/dt=100A/µs
38
Qrr
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs
47
VGS=-10V, VDS=-20V, RL=1Ω,
RGEN=3Ω
Turn-Off Fall Time
30
ns
49
ns
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
TBD
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
TBD
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment
with TA=25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev4: April, 2012
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOD4185/AOI4185
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
VDS=-5V
-6.0V
-10V
100
-4.5V
80
80
-ID(A)
-ID (A)
60
-4.0V
60
40
40
`
125°C
VGS=-3.5V
20
20
25°
0
0
0
1
2
3
4
5
1.5
-VDS (Volts)
Figure 1: On-Region Characteristics
22
1.8
RDS(ON) (mΩ
Ω)
Normalized On-Resistance
2
VGS=-4.5V
18
16
14
VGS=-10V
12
10
3
3.5
4
4.5
5
VGS=-10V
ID=-20A
1.6
1.4
VGS=-4.5V
ID=-15A
1.2
1
0.8
0.6
0
10
20
30
40
50
60
-50 -25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
25
50
75 100 125 150 175 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
45
150
ID=-20A
40
10
35
1
30
0.1
25
-IS (A)
RDS(ON) (mΩ
Ω)
2.5
-VGS(Volts)
Figure 2: Transfer Characteristics
24
20
2
125°C
mJ
125°C
0.01
25°C
20
0.001
25°C
15
0.0001
10
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.00001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOD4185/AOI4185
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3500
10
VDS=-20V
ID=-20A
3000
Ciss
Capacitance (pF)
-VGS (Volts)
8
6
4
2500
2000
1500
1000
Crss
2
Coss
500
0
0
0
5
10
15
20
25
30
35
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
45
5
10
15
20
25
30
35
40
-VDS (Volts)
Figure 8: Capacitance Characteristics
10000
1000
TJ(Max)=175°
C
10µs
RDS(ON)
limited
100µs
10
1ms
10ms
1
Power (W)
-ID (Amps)
100
1000
100
DC
TJ(Max)=175°C
TC=25°C
0.1
0.1
10
1
10
100
0.00001
-VDS (Volts)
10
Zθ Jc Normalized Transient
Thermal Resistance
0.001
0.01
0.1
1
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
RθJC=2.4°C/W
0.0001
150
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
mJ
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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AOD4185/AOI4185
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
50
40
-Current rating ID (A)
Power Dissipation (W)
60
50
40
30
20
30
20
10
10
0
0
0
25
50
75
100
125
150
175
0
25
TCASE (°
°C)
Figure 12: Power De-rating (Note B)
50
75
100
125
150
175
TCASE (°
°C)
Figure 13: Current De-rating (Note B)
10000
TJ(Max)=150°
C
Power (W)
1000
100
10
1
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
Zθ JA Normalized Transient
Thermal Resistance
10
1
150
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Alpha & Omega Semiconductor, Ltd.
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AOD4185/AOI4185
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgs
Vds
Qgd
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
td(on)
Vgs
-
DUT
Vgs
td(off)
tr
tf
90%
Vdd
VDC
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
EAR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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