AOD425 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD425 uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. VDS (V) = -30V ID = -20A (VGS = -10V) RDS(ON) < 17mΩ (VGS = -10V) RDS(ON) < 35mΩ (VGS = -5V) -RoHS Compliant -Halogen Free* ESD Protected! 100% Rg Tested! TO-252 D-PAK Top View D D Bottom View G G S G S S Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current F Pulsed Drain Current TC=100°C Continuous Drain TA=25°C TA=70°C Current Power Dissipation A TA=70°C Alpha & Omega Semiconductor, Ltd. IDM -70 A -7 50 W 25 2.3 W 1.5 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State A -9 PDSM Junction and Storage Temperature Range Maximum Junction-to-Case B V -30 PD TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A ±25 ID IDSM TC=25°C TC=100°C Units V -40 C Power Dissipation B Maximum -30 RθJA RθJC Typ 18 44 2.4 °C Max 22 55 3 Units °C/W °C/W °C/W www.aosmd.com AOD425 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250uA, VGS=0V -30 -5 Gate-Body leakage current VDS=0V, VGS= ±25V Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 On state drain current VGS=-10V, VDS=-5V -70 VGS=-10V, ID=-20A Static Drain-Source On-Resistance TJ=125°C IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Rg Gate resistance 17 A 27 Diode Forward Voltage Reverse Transfer Capacitance 13.5 35 IS Output Capacitance V 24 VSD Coss uA 27 VDS=-5V, ID=-20A Crss ±10 -3.5 18.5 Forward Transconductance -0.72 1760 VGS=0V, VDS=-15V, f=1MHz µA -2.45 VGS=-5V, ID=-20A gFS Units -1 TJ=55°C IGSS RDS(ON) Max V VDS=-30V, VGS=0V VGS(th) ID(ON) Typ mΩ S -1 V -40 A 2200 pF 360 pF 255 pF 6.4 8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 30 38 nC Qg(4.5V) Total Gate Charge 11 nC 7 nC 8 nC 11.5 ns Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-20A VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω 8 ns 35 ns 18.5 ns trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=100A/µs 24 Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs 16 30 ns nC A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on t<10s R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev1: Sep. 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD425 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 25 60 -10V VDS=-5V 20 125°C 15 40 ID(A) ID(A) 50 -5V 30 10 20 -4.5V 25°C 5 10 VGS=-4V 0 0 0 1 2 3 4 VDS (Volts) Figure 1: On-Region Characteristics 5 2 40.0 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 5 1.8 Normalized On-Resistance ID=-20A RDS(ON) (mΩ ) 30.0 VGS=-5V 20.0 10.0 VGS=-10V 1.6 VGS=-10V 1.4 1.2 VGS=-5V 1 0.0 0 5 10 15 20 0.8 25 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 50 1.0E+02 ID=-20A 1.0E+01 125°C 40 1.0E+00 125°C 30 IS (A) RDS(ON) (mΩ ) 100 TC=100°C 1.0E-02 TA=25°C 20 25°C 1.0E-01 1.0E-03 -55 to 175 10 25°C 1.0E-04 1.0E-05 0 0 5 10 15 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 20 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 www.aosmd.com AOD425 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500 10 VDS=-15V ID=-20A 6 4 1500 1000 Coss 2 500 0 0 Crss 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics 35 0 1000 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 25 100 TJ(Max)=175°C TC=25°C 100 10 100µs 1ms DC 1 10ms 0.01 0.01 60 40 TJ(Max)=175°C TC=25°C 0.1 80 10µs RDS(ON) limited Power (W) ID (Amps) Ciss 2000 Capacitance (pF) VGS (Volts) 8 0.1 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 20 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=T on/T TJ,PK=T A+PDM.ZθJC.RθJC RθJC=3°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 TC=100°C TA=25°C PD 0.1 -55 to 175 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD425 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 60 40 Current rating ID(A) Power Dissipation (W) 45 50 40 30 20 35 30 25 20 15 10 10 5 0 0 0 25 50 75 100 125 150 175 0 TCASE (°C) Figure 13: Power De-rating (Note B) 25 50 75 100 125 150 175 TCASE (°C) Figure 14: Current De-rating (Note B) 100 Power (W) 80 60 40 20 0 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 1 D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=55°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD425 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC Qgd + + DUT Qgs Vds VDC Vgs Ig Charge Resistive Switching Test Circuit & W aveform s RL Vds t off t on td(on) Vgs - D UT Vgs t d(off) tr 90% Vdd VDC tf + Rg Vgs 10% Vds Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com