AOD488 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD488 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. VDS (V) = 40V (VGS = 10V) ID = 20 A RDS(ON) < 26 mΩ (VGS = 10V) RDS(ON) < 39 mΩ (VGS = 4.5V) -RoHS Compliant -Halogen Free* 100% UIS Tested! 100% Rg Tested! TO252 DPAK Top View D Bottom View D D G S S G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C Avalanche Current C Power Dissipation B TC=100°C Power Dissipation A TA=70°C C V ID 23 50 IAR 12 A EAR 22 mJ 2 W 1.3 -55 to 175 Symbol Alpha & Omega Semiconductor, Ltd. W 25 TJ, TSTG t ≤ 10s Steady-State Steady-State A 50 PDSM Junction and Storage Temperature Range Maximum Junction-to-Case B ±20 IDM PD TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 20 Pulsed Drain Current C Repetitive avalanche energy L=0.3mH TC=25°C Maximum 40 RθJA RθJC Typ 17.4 50 2.3 °C Max 30 60 3 Units °C/W °C/W °C/W www.aosmd.com AOD488 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions ID=10mA, VGS=0V Min Typ 40 45 VDS=32V, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 50 TJ=55°C VGS=10V, ID=20A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=8A 5 0.1 uA 3 V 21.5 26 A 34 31 Forward Transconductance VDS=5V, ID=20A 25 VSD Diode Forward Voltage IS=1A, VGS=0V 0.76 IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 404 VGS=0V, VDS=20V, f=1MHz µA 2.3 gFS DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 IDSS RDS(ON) Max 41 mΩ 39 mΩ 1 V 20 A S 500 pF 95 pF 37 pF 2.7 4 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 9.2 12 nC Qg(4.5V) Total Gate Charge 4.5 nC 1.6 nC 2.6 nC 3.5 ns Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=20A VGS=10V, VDS=20V, RL=1.0Ω, RGEN=3Ω 6 ns 13.2 ns 3.5 ns IF=20A, dI/dt=100A/µs 22.9 ns nC Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 18.3 A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RthJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev3: July 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD488 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 60 10V VDS=5V 8V 15 5V 40 35 30 25 20 ID(A) ID (A) 55 50 45 4.5V 4V 15 10 5 10 125°C 5 25°C VGS=3.5V 0 0 0 1 2 3 4 2 5 2.5 50 3.5 4 Normalized On-Resistance 40 VGS=4.5V 35 30 25 20 VGS=10V 15 4.5 500 150 60 1.8 45 RDS(ON) (mΩ ) 3 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=10V ID=20A 1.6 1.4 VGS=4.5V ID=8A 1.2 1 10 0 5 10 15 20 0.8 25 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 1.0E+02 ID=20A 90 1.0E+01 80 125°C 1.0E+00 70 125°C IS (A) RDS(ON) (mΩ ) 25 60 1.0E-01 50 1.0E-02 40 1.0E-03 30 25°C 1.0E-04 25°C 20 1.0E-05 10 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD488 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 700 10 Capacitance (pF) VGS (Volts) 600 VDS=20V ID=20A 8 6 4 Ciss 500 400 300 Coss 200 Crss 2 100 0 0 2 4 6 8 0 10 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 5 10 15 20 25 30 35 VDS (Volts) Figure 8: Capacitance Characteristics 40 500 150 60 200 10µs 160 10.0 ID (Amps) 100µs DC 1ms 1.0 10ms TJ(Max)=175°C, TA=25°C 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 Zθ JC Normalized Transient Thermal Resistance TJ(Max)=175°C Tc=25°C 120 80 40 0 0.0001 0.1 0.1 Power (W) RDS(ON) limited D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3°C/W 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD488 14 60 12 50 Power Dissipation (W) ID(A), Peak Avalanche Current TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 6 4 TA=25°C 2 40 30 20 10 0 0.00001 0 0.0001 0.001 0 25 25 50 20 40 75 100 125 150 175 500 150 60 TA=25°C 15 10 30 20 10 5 0 0.001 0 0 25 50 75 100 125 150 175 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note B) Zθ JA Normalized Transient Thermal Resistance 50 TCASE (°C) Figure 13: Power De-rating (Note B) Power (W) Current rating ID(A) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD488 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id Vgs Vgs + Vdd I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com