AOSMD AOD4100

AOD4100
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD4100 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a High side switch in CPU core
power conversion.
VDS (V) = 25V
ID = 50A (VGS = 10V)
RDS(ON) < 6.5mΩ (VGS = 20V)
RDS(ON) < 9mΩ (VGS = 12V)
RDS(ON) < 12mΩ (VGS = 10V)
-RoHS Compliant
-Halogen Free*
100% UIS Tested!
100% Rg Tested!
TO-252
D-PAK
Top View
D
Bottom View
D
G
S
G
S
S
G
Absolute Maximum Ratings T A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current B
G
TC=100°C
Pulsed Drain Current C
Maximum
25
Units
V
±30
V
50
ID
49
IDM
120
A
C
IAR
28
A
Repetitive avalanche energy L=0.3mH C
EAR
118
mJ
Avalanche Current
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
TA=25°C
W
25
6.5
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Case D
Alpha & Omega Semiconductor, Ltd.
50
PD
W
4.2
-55 to 175
Symbol
RθJA
RθJC
Typ
16
43
2
°C
Max
19
52
3
Units
°C/W
°C/W
°C/W
www.aosmd.com
AOD4100
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
25
Typ
1
TJ=55°C
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±30V
Gate Threshold Voltage
VDS=VGS ID=250µA
2
ID(ON)
On state drain current
VGS=12V, VDS=5V
120
100
VGS=20V, ID=20A
3.2
5.4
6.5
7.5
9
VGS=12V, ID=20A
7.3
9
12
TJ=125°C
Static Drain-Source On-Resistance
VGS=10V, ID=20A
9.8
gFS
Forward Transconductance
VDS=5V, ID=20A
43
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
4
nA
V
mΩ
S
0.72
1100
VGS=0V, VDS=12.5V, f=1MHz
µA
A
RDS(ON)
Output Capacitance
Units
V
VDS=20V, VGS=0V
VGS(th)
Coss
Max
1
V
50
A
1350
pF
420
pF
200
pF
0.8
1.5
Ω
SWITCHING PARAMETERS
Qg(12V) Total Gate Charge
20
24
nC
Qg(10V)
Total Gate Charge
17
Qgs
Gate Source Charge
6.5
nC
Qgd
Gate Drain Charge
6.8
nC
tD(on)
Turn-On DelayTime
9.5
ns
tr
Turn-On Rise Time
13.5
ns
tD(off)
Turn-Off DelayTime
11.5
ns
tf
Turn-Off Fall Time
5.4
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/µs
32
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
19
ns
nC
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=12.5V, ID=20A
VGS=10V, VDS=12.5V, RL=0.68Ω,
RGEN=0.6Ω
A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on t<10s R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
*This device is guaranteed green after data code 8X11 (Sep 1 ST 2008).
Re1: Oct 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4100
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
120
10V
100
60
12V
20V
ID(A)
ID(A)
80
60
VDS=5V
40
VGS=8V
40
125°C
20
25°C
20
0
0
4
0
1
2
3
4
VDS (Volts)
Figure 1: On-Region Characteristics
6
7
8
9
VGS(Volts)
Figure 2: Transfer Characteristics
11.0
1.6
Normalized On-Resistance
VGS=10V
10.0
9.0
RDS(ON) (mΩ )
5
5
VGS=12V
8.0
7.0
6.0
5.0
VGS=20V
VGS=20V
ID=20A
1.4
1.2
1
VGS=12V
VGS=10V
VGS=10V
VGS=12V
0.8
VGS=20V
4.0
0
5
10
15
20
25
0.6
30
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
20
1.0E+02
ID=20A
18
1.0E+01
16
1.0E+00
12
TC=100°C
10
TA=25°C
IS (A)
RDS(ON) (mΩ )
14
125°C
125°C
1.0E-01
1.0E-02
25°C
8
1.0E-03
-55 to 175
6
1.0E-04
25°C
4
1.0E-05
2
8
10
12
14
16
18
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
20
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
www.aosmd.com
AOD4100
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1600
20
VDS=12.5V
ID=20A
18
VGS (Volts)
14
12
10
8
6
1200
1000
Coss
800
600
400
4
Crss
200
2
0
0
0
5
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
35
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
220
1000.0
100.0
ID (Amps)
Ciss
1400
Capacitance (pF)
16
RDS(ON)
limited
10.0
DC
10µs
100µ
180
1ms
140
TJ(Max)=175°C
TC=25°C
Power (W)
10ms
100
1.0
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
VDS (Volts)
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
60
20
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=T on/T
TJ,PK=T c+PDM.ZθJC.RθJC
RθJC=3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
TC=100°C
TA=25°C
PD
0.1
-55 to 175
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4100
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
TA=25°C
Power Dissipation (W)
ID(A), Peak Avalanche Current
100
80
60
25°C
40
150°C
20
50
40
30
20
10
0
0.00001
0
0.0001
0.001
0
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
60
50
80
40
Power (W)
Current rating ID(A)
25
30
20
10
60
40
20
0
0
25
50
75
100
125
150
0
0.001
175
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junctionto-Ambient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note B)
0.01
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Single Pulse
0.001
0.00001
0.0001
PD
D=T on/T
TJ,PK=T A+PDM.ZθJA.RθJA
RθJA=52°C/W
0.01
0.001
0.01
0.1
Ton
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD4100
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
www.aosmd.com