AOD4100 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4100 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a High side switch in CPU core power conversion. VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) < 6.5mΩ (VGS = 20V) RDS(ON) < 9mΩ (VGS = 12V) RDS(ON) < 12mΩ (VGS = 10V) -RoHS Compliant -Halogen Free* 100% UIS Tested! 100% Rg Tested! TO-252 D-PAK Top View D Bottom View D G S G S S G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current B G TC=100°C Pulsed Drain Current C Maximum 25 Units V ±30 V 50 ID 49 IDM 120 A C IAR 28 A Repetitive avalanche energy L=0.3mH C EAR 118 mJ Avalanche Current TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C W 25 6.5 PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Case D Alpha & Omega Semiconductor, Ltd. 50 PD W 4.2 -55 to 175 Symbol RθJA RθJC Typ 16 43 2 °C Max 19 52 3 Units °C/W °C/W °C/W www.aosmd.com AOD4100 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 25 Typ 1 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±30V Gate Threshold Voltage VDS=VGS ID=250µA 2 ID(ON) On state drain current VGS=12V, VDS=5V 120 100 VGS=20V, ID=20A 3.2 5.4 6.5 7.5 9 VGS=12V, ID=20A 7.3 9 12 TJ=125°C Static Drain-Source On-Resistance VGS=10V, ID=20A 9.8 gFS Forward Transconductance VDS=5V, ID=20A 43 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 4 nA V mΩ S 0.72 1100 VGS=0V, VDS=12.5V, f=1MHz µA A RDS(ON) Output Capacitance Units V VDS=20V, VGS=0V VGS(th) Coss Max 1 V 50 A 1350 pF 420 pF 200 pF 0.8 1.5 Ω SWITCHING PARAMETERS Qg(12V) Total Gate Charge 20 24 nC Qg(10V) Total Gate Charge 17 Qgs Gate Source Charge 6.5 nC Qgd Gate Drain Charge 6.8 nC tD(on) Turn-On DelayTime 9.5 ns tr Turn-On Rise Time 13.5 ns tD(off) Turn-Off DelayTime 11.5 ns tf Turn-Off Fall Time 5.4 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 32 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 19 ns nC VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=12.5V, ID=20A VGS=10V, VDS=12.5V, RL=0.68Ω, RGEN=0.6Ω A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on t<10s R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. *This device is guaranteed green after data code 8X11 (Sep 1 ST 2008). Re1: Oct 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4100 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 120 10V 100 60 12V 20V ID(A) ID(A) 80 60 VDS=5V 40 VGS=8V 40 125°C 20 25°C 20 0 0 4 0 1 2 3 4 VDS (Volts) Figure 1: On-Region Characteristics 6 7 8 9 VGS(Volts) Figure 2: Transfer Characteristics 11.0 1.6 Normalized On-Resistance VGS=10V 10.0 9.0 RDS(ON) (mΩ ) 5 5 VGS=12V 8.0 7.0 6.0 5.0 VGS=20V VGS=20V ID=20A 1.4 1.2 1 VGS=12V VGS=10V VGS=10V VGS=12V 0.8 VGS=20V 4.0 0 5 10 15 20 25 0.6 30 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 20 1.0E+02 ID=20A 18 1.0E+01 16 1.0E+00 12 TC=100°C 10 TA=25°C IS (A) RDS(ON) (mΩ ) 14 125°C 125°C 1.0E-01 1.0E-02 25°C 8 1.0E-03 -55 to 175 6 1.0E-04 25°C 4 1.0E-05 2 8 10 12 14 16 18 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 20 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 www.aosmd.com AOD4100 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1600 20 VDS=12.5V ID=20A 18 VGS (Volts) 14 12 10 8 6 1200 1000 Coss 800 600 400 4 Crss 200 2 0 0 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics 35 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 220 1000.0 100.0 ID (Amps) Ciss 1400 Capacitance (pF) 16 RDS(ON) limited 10.0 DC 10µs 100µ 180 1ms 140 TJ(Max)=175°C TC=25°C Power (W) 10ms 100 1.0 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 1 VDS (Volts) 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 60 20 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=T on/T TJ,PK=T c+PDM.ZθJC.RθJC RθJC=3°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 TC=100°C TA=25°C PD 0.1 -55 to 175 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4100 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 TA=25°C Power Dissipation (W) ID(A), Peak Avalanche Current 100 80 60 25°C 40 150°C 20 50 40 30 20 10 0 0.00001 0 0.0001 0.001 0 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) 100 60 50 80 40 Power (W) Current rating ID(A) 25 30 20 10 60 40 20 0 0 25 50 75 100 125 150 0 0.001 175 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junctionto-Ambient (Note H) TCASE (°C) Figure 14: Current De-rating (Note B) 0.01 Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse 0.001 0.00001 0.0001 PD D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=52°C/W 0.01 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4100 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com