AOSMD AOL1401

AOL1401
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1401 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications. It is
ESD protected.
-RoHS Compliant
-Halogen and Antimony Free Green Device*
VDS (V) = -38V
ID = -85A
RDS(ON) < 8.5mΩ (VGS = -20V)
RDS(ON) < 10mΩ (VGS = -10V)
ESD Rating: 3000V HBM
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
D
D
Bottom tab
connected to
drain
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current G
ID
IDM
C
2.08
W
1.3
TJ, TSTG
°C
-55 to 175
Symbol
t ≤ 10s
Steady-State
Steady-State
W
50
PDSM
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
-10
100
PD
TA=25°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
A
-120
IDSM
TC=25°C
TA=70°C
V
-12
TA=70°C
Power Dissipation A
±25
-62
TA=25°C
TC=100°C
Units
V
-85
TC=100°C
Power Dissipation B
Maximum
-38
RθJA
RθJC
Typ
21
48
1
Max
25
60
1.5
Units
°C/W
°C/W
°C/W
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AOL1401
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-38
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.5
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-120
RDS(ON)
Static Drain-Source On-Resistance
TJ=55°C
±1
µA
VDS=0V, VGS=±25V
±10
µA
TJ=125°C
VGS=-10V, ID=-20A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
VDS=-5V, ID=-20A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qgs
Gate Source Charge
nA
-500
VDS=0V, VGS=±20V
VGS=-20V, ID=-20A
Crss
Units
-100
Zero Gate Voltage Drain Current
Coss
Max
V
VDS=-30V, VGS=0V
IDSS
IS
Typ
-2.2
V
A
6.8
8.5
9.1
11
7.9
10
mΩ
mΩ
50
0.71
3800
VGS=0V, VDS=-20V, f=1MHz
-3.5
S
-1
V
14.5
A
4560
pF
560
pF
350
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-20V, ID=-20A
pF
7.5
9
61.2
74
Ω
nC
11.88
nC
nC
Qgd
Gate Drain Charge
15.4
tD(on)
Turn-On DelayTime
13.5
ns
tr
Turn-On Rise Time
17
ns
97
ns
43
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=-10V, VDS=-20V, RL=1Ω,
RGEN=3Ω
trr
Body Diode Reverse Recovery Time
IF=-20A, dI/dt=100A/µs
30
Qrr
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs
29
36
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
* This device is guaranteed green after date code 8P11 (June 1 ST 2008)
Rev 2: Dec 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
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AOL1401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
30
-14V
-10V
VDS=-5V
25
90
20
-ID(A)
-ID (A)
-6V
60
125°C
15
10
-4V
25°C
30
5
Vgs=-3.5V
0
0
0
1
2
3
4
5
2
2.5
-VDS (Volts)
Fig 1: On-Region Characteristics
3.5
4
4.5
5
-VGS(Volts)
Figure 2: Transfer Characteristics
9
1.8
Normalized On-Resistance
RDS(ON) (mΩ)
3
VGS=-10V
8
7
VGS=-20V
1.6
VGS=-20V
ID=-20A
1.4
1.2
VGS=-10V
ID=-20A
1
6
0
5
0.8
10
15
20
25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
0
30
60
90
120
150
180
210
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
30
ID=-20A
1.0E+00
25
1.0E-01
125°C
-IS (A)
RDS(ON) (mΩ)
20
15
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
10
25°C
1.0E-05
5
1.0E-06
0
0.0
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
4.9
6
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AOL1401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5000
10
4000
Capacitance (pF)
-VGS (Volts)
Ciss
VDS=-20V
ID=-20A
8
6
4
3000
2000
Coss
Crss
1000
2
0
0
0
10
20
30
40
50
60
-Qg (nC)
Figure 7: Gate-Charge Characteristics
0
70
1000.0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000
TJ(Max)=175°C, TA=25°C
RDS(ON)
limited
100µs
1ms
10.0
10ms
1.0
DC
100m
0.1
0.1
1
10
100
-VDS (Volts)
ZθJC Normalized Transient
Thermal Resistance
TJ(Max)=175°C
TA=25°C
600
400
200
0
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note B)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Power (W)
-ID (Amps)
800
10µs
100.0
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4.9
Alpha & Omega Semiconductor, Ltd.
6
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AOL1401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
120
40
Power (W)
Power Dissipation (W)
50
90
60
30
TA=25°C
20
30
10
0
0
25
50
75
100
125
150
0
0.01
175
TCASE (°C)
Figure 12: Power De-rating (Note B)
0.1
1
10
100
1000
Pulse Width (s)
Figure 13: Single Pulse Power Rating Junction-toAmbient (Note H)
Current rating -ID(A)
100
80
60
40
20
0
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 14: Current De-rating (Note B)
ZθJA Normalized Transient
Thermal Resistance
100
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
0.01
0.001
0.00001
Ton
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
4.9
Alpha & Omega Semiconductor, Ltd.
6
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AOL1401
Gate Charge Test Circuit & W aveform
Vgs
Qg
-10V
+
VD C
-
Qgs
Vds
Qgd
+
VDC
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
t off
t on
td(on)
Vgs
VDC
Rg
-
DUT
Vgs
t d(off)
tr
tf
90%
Vdd
+
Vgs
10%
Vds
Unclam ped Inductive Switching (UIS) Test Circuit & W aveform s
2
L
E AR = 1/2 LIAR
Vds
Vds
Id
VDC
-
Vgs
Vgs
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & W aveform s
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
-Isd
+ Vdd
VDC
-
-I F
t rr
dI/dt
-I RM
Vdd
-Vds
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