AOD4191L P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4191 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. The device well suited for high current applications. VDS (V) = -40V ID = -34A RDS(ON) < 25mΩ RDS(ON) < 34mΩ 100% UIS Tested! 100% R g Tested! -RoHS Compliant -Halogen Free* TO-252 D-PAK Top View D Bottom View D G G G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current B Pulsed Drain Current C TC=100°C C A V -24 IDM -70 A Junction and Storage Temperature Range Maximum Junction-to-Case B Alpha & Omega Semiconductor, Ltd. -6 -31 A EAR 48 mJ 50 2.5 W 1.6 TJ, TSTG °C -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 25 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient ID IAR PD TC=100°C TA=25°C Power Dissipation ±20 -7 Avalanche Current C Power Dissipation B Units V ID TC=25°C Repetitive avalanche energy L=0.1mH TC=25°C Maximum -40 -34 TC=100°C Continuous Drain Current A (V GS = -10V) (VGS = -10V) (VGS = -4.5V) RθJA RθJC Typ 16.7 40 2.5 Max 25 50 3 Units °C/W °C/W °C/W www.aosmd.com AOD4191L Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -40 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.7 ID(ON) On state drain current VGS=-10V, VDS=-5V -70 VGS=-10V, ID=-12A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-8A gFS Forward Transconductance VDS=-5V, ID=-12A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current Max DYNAMIC PARAMETERS Ciss Input Capacitance Units V VDS=-40V, VGS=0V IGSS RDS(ON) Typ µA ±100 nA -1.9 -3 V 20.5 25 31 38 27 34 mΩ -1 V -45 A A 30 -0.74 mΩ S 1200 1440 1750 pF 125 160 200 pF 90 125 175 pF 2 5 10 Ω SWITCHING PARAMETERS Qg(-10V) Total Gate Charge 24 29 35 nC Qg(-4.5V) Total Gate Charge 11 14 17 nC 3.5 4.3 5.5 nC 4.5 6.7 9.4 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-20V, ID=-12A 9.6 ns 16.8 ns 38 ns 22 ns tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=-12A, dI/dt=500A/µs 15 18 Qrr Body Diode Reverse Recovery Charge IF=-12A, dI/dt=500A/µs 56 68 VGS=-10V, VDS=-20V, RL=1.6Ω, RGEN=3Ω 22 82 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1 ST 2008). Rev 1 : Oct-2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4191L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70 -6V -10V 60 50 -5V VDS=-5V -4.5V 40 40 30 -4V 30 -ID(A) -ID (A) 50 125°C 20 -3.5V 25°C 20 10 VGS=-3V 10 0 0 0 1 2 3 4 0 5 1 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 40 Normalized On-Resistance 2 35 RDS(ON) (mΩ ) 2 VGS=-4.5V 30 25 VGS=-10V 20 VGS=-10V ID=-12A 1.8 1.6 VGS=-4.5V ID=-8A 1.4 1.2 1 0.8 15 0 5 10 15 20 25 0 30 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 75 ID=-12A 10 60 1 45 -IS (A) RDS(ON) (mΩ ) 125°C 125°C 0.1 0.01 25°C 0.001 30 0.0001 25°C 15 0.00001 0.000001 0 0.0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD4191L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2000 1800 Capacitance (pF) 8 -VGS (Volts) 2200 100µs VDS=-20V ID=-12A A 6 4 2 Ciss 1600 1400 1200 1000 800 600 Crss Coss 400 200 0 0 0 5 10 15 20 25 -Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 100.0 5 10 15 20 25 30 35 -VDS (Volts) Figure 8: Capacitance Characteristics 40 200 10µs 160 100µs 10.0 DC 1ms 10ms Power (W) -ID (Amps) RDS(ON) limited TJ(Max)=175°C TC=25°C 120 80 1.0 40 TJ(Max)=175°C, T C=25°C 0.1 0.1 1 10 100 -VDS (Volts) Zθ JC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3°C/W 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0 0.0001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4191L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 TA=25°C 70 60 Power Dissipation (W) -ID(A), Peak Avalanche Current 80 TA=100°C TA=150°C 50 40 30 TA=125°C 50 40 30 20 10 20 0 10 0.000001 0.00001 0.0001 0 0.001 25 35 100 125 150 175 TA=25°C 50 30 40 25 Power (W) Current rating -ID(A) 75 60 40 20 15 30 20 10 10 5 0 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) 10 Zθ JA Normalized Transient Thermal Resistance 50 TCASE (°C) Figure 13: Power De-rating (Note F) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0 0.001 175 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4191L Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgs Vds Qgd + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton td(on) Vgs - DUT Vgs td(off) tr tf 90% Vdd VDC + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com