AOSMD AOL1413

AOL1413
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1413 uses advanced trench technology to
provide excellent RDS(ON) and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as
a load switch or in PWM applications. The device is
ESD protected.
-RoHS Compliant
-Halogen and Antimony Free Green Device*
VDS (V) = -30V
ID = -20A (VGS = -10V)
RDS(ON) < 17mΩ (VGS = -10V)
RDS(ON) < 36mΩ (VGS = -5V)
ESD Protected!
D
Ultra SO-8TM Top View
D
G
Bottom tab
connected to
drain
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
B
Current
Pulsed Drain Current
Continuous Drain
A
Current
C
-27
IDM
-70
IDSM
TC=25°C
TA=70°C
Alpha & Omega Semiconductor, Ltd.
38
2.1
W
1.3
TJ, TSTG
-55 to 175
Symbol
t ≤ 10s
Steady-State
Steady-State
W
19
PDSM
Junction and Storage Temperature Range
Maximum Junction-to-Case B
A
-7
PD
TA=25°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
A
Maximum Junction-to-Ambient
V
-9
TA=70°C
Power Dissipation A
±25
ID
TA=25°C
TC=100°C
Units
V
-38
TC=100°C
Power Dissipation B
Maximum
-30
RθJA
RθJC
Typ
18
49
2.9
°C
Max
25
60
4
Units
°C/W
°C/W
°C/W
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AOL1413
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=-250uA, VGS=0V
-30
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±25V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.5
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-70
TJ=55°C
VGS=-10V, ID=-20A
Static Drain-Source On-Resistance
TJ=125°C
VGS=-5V, ID=-20A
gFS
Forward Transconductance
VDS=-5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Max
-5
VGS=0V, VDS=0V, f=1MHz
µA
±10
uA
-2.5
-3.5
V
13.5
17
18.5
24
28
36
A
27
-0.72
1760
VGS=0V, VDS=-15V, f=1MHz
Units
V
VDS=-30V, VGS=0V
IDSS
RDS(ON)
Typ
mΩ
S
-1
V
-40
A
2200
pF
360
pF
255
pF
6.4
8
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
30
38
nC
Qg(4.5V) Total Gate Charge
11
nC
7
nC
8
nC
11.5
ns
8
ns
35
ns
18.5
ns
VGS=-10V, VDS=-15V, ID=-20A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=-20A, dI/dt=100A/µs
24
Qrr
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs
16
Body Diode Reverse Recovery Time
VGS=-10V, VDS=-15V, RL=0.75Ω,
RGEN=3Ω
30
ns
nC
A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation P DSM is based on t<10s R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
* This device is guaranteed green after date code 8P11 (June 1 ST 2008)
Rev2: Dec 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
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AOL1413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
25
60
-10V
VDS=-5V
20
125°C
15
40
ID(A)
ID(A)
50
-5V
30
20
10
-4.5V
25°C
5
10
VGS=-4V
0
0
0
1
2
3
4
VDS (Volts)
Figure 1: On-Region Characteristics
5
2
40.0
3
3.5
4
4.5
VGS(Volts)
Figure 2: Transfer Characteristics
Normalized On-Resistance
VGS=-5V
20.0
10.0
VGS=-10V
0.0
ID=-20A
1.6
VGS=-10V
1.4
1.2
VGS=-5V
1
0.8
0
5
10
15
20
25
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
50
1.0E+02
ID=20A
1.0E+01
125°C
40
1.0E+00
125°C
30
IS (A)
RDS(ON) (mΩ )
5
1.8
30.0
RDS(ON) (mΩ )
2.5
TC=100°C
1.0E-02
TA=25°C
20
25°C
1.0E-01
1.0E-03
-55 to 175
10
25°C
1.0E-04
1.0E-05
0
0
5
10
15
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
20
0.0
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
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AOL1413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500
10
VDS=-15V
ID=-20A
6
4
1500
1000
2
500
0
0
0
5
Ciss
2000
Capacitance (pF)
VGS (Volts)
8
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
35
Coss
Crss
0
1000
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
100
TJ(Max)=175°C
TC=25°C
100
10
100µs
1ms
DC
1
10ms
0.01
0.01
60
40
TJ(Max)=175°C
TC=25°C
0.1
80
10µs
RDS(ON)
limited
Power (W)
ID (Amps)
30
0.1
1
10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
20
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
RθJC=2.9°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
TC=100°C
TA=25°C
PD
0.1
-55 to 175
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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AOL1413
50
50
40
40
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
10
30
20
10
0
0
0
25
50
75
100
125
150
175
0
TCASE (°C)
Figure 13: Power De-rating (Note B)
25
50
75
100
125
150
175
TCASE (°C)
Figure 14: Current De-rating (Note B)
100
Power (W)
80
60
40
20
0
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=49°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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AOL1413
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
+
DUT
Qgd
Qgs
Vds
VDC
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
td(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
EAR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Vgs
L
-Isd
+ Vdd
Alpha & Omega Semiconductor, Ltd.
-
t rr
dI/dt
-I RM
Vdd
VDC
Ig
-I F
-Vds
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