LM3481 www.ti.com SNVS346E – NOVEMBER 2007 – REVISED APRIL 2012 LM3481/LM3481Q High Efficiency Low-Side N-Channel Controller for Switching Regulators Check for Samples: LM3481 FEATURES KEY SPECIFICATIONS • • • 1 2 • • • • • • • • LM3481QMM in the VSSOP-10 Package are Automotive Grade Products that are AEC-Q100 Grade 1 Qualified (-40°C to +125°C Operating Junction Temperature) 10-Lead VSSOP Package Internal Push-Pull Driver with 1A Peak Current Capability Current Limit and Thermal Shutdown Frequency Compensation Optimized with a Capacitor and a Resistor Internal Softstart Current Mode Operation Adjustable Undervoltage Lockout with Hysteresis Pulse Skipping at Light Loads • • DESCRIPTION The LM3481 is a versatile Low-Side N-FET high performance controller for switching regulators. It is suitable for use in topologies requiring a low-side FET, such as boost, flyback, SEPIC, etc. The LM3481 can be operated at extremely high switching frequencies in order to reduce the overall solution size. The switching frequency of the LM3481 can be adjusted to any value between 100 kHz and 1 MHz by using a single external resistor or by synchronizing it to an external clock. Current mode control provides superior bandwidth and transient response in addition to cycle-by-cycle current limiting. Current limit can be programmed with a single external resistor. APPLICATIONS • • • • Wide Supply Voltage Range of 2.97V to 48V 100 kHz to 1 MHz Adjustable and Synchronizable Clock Frequency ±1.5% (Over Temperature) Internal Reference 10 µA Shutdown Current (Over Temperature) Distributed Power Systems Notebook, PDA, Digital Camera, and other Portable Applications Offline Power Supplies Set-Top Boxes The LM3481 has built in protection features such as thermal shutdown, short-circuit protection and over voltage protection. Power saving shutdown mode reduces the total supply current to 5µA and allows power supply sequencing. Internal soft-start limits the inrush current at start-up. TYPICAL APPLICATION CIRCUIT R7 VIN = 3.0V to 48V + CIN R8 VIN ISEN UVLO RC FB VOUT = 5V, 1A VCC CC COMP L1 LM3481 CBYP DR Q1 CS D1 L2 + COUT PGND RF2 AGND FA/SYNC/SD RFA CSEN RSEN RF1 Figure 1. Typical SEPIC Converter 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2007–2012, Texas Instruments Incorporated LM3481 SNVS346E – NOVEMBER 2007 – REVISED APRIL 2012 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. CONNECTION DIAGRAM ISEN UVLO COMP FB AGND 1 10 2 9 3 8 LM3481 4 7 5 6 VIN VCC DR PGND FA/SYNC/SD Figure 2. 10-Lead VSSOP Package (DGS-10 Package) PIN DESCRIPTIONS 2 Pin Name Pin Number ISEN 1 Current sense input pin. Voltage generated across an external sense resistor is fed into this pin. Description UVLO 2 Under voltage lockout pin. A resistor divider from VIN to ground is connected to the UVLO pin. The ratio of these resistances determine the input voltage which allows switching and the hysteresis to disable switching. COMP 3 Compensation pin. A resistor and capacitor combination connected to this pin provides compensation for the control loop. FB 4 Feedback pin. Inverting input of the error amplifier. AGND 5 Analog ground pin. Internal bias circuitry reference. Should be connected to PGND at a single point. FA/SYNC/SD 6 Frequency adjust, synchronization, and shutdown pin. A resistor connected from this pin to ground sets the oscillator frequency. An external clock signal at this pin will synchronize the controller to the frequency of the clock. A high level on this pin for ≥ 30 µs will turn the device off and the device will then draw 5 µA from the supply typically. PGND 7 Power ground pin. External power circuitry reference. Should be connected to AGND at a single point. DR 8 Drive pin of the IC. The gate of the external MOSFET should be connected to this pin. VCC 9 Driver supply voltage pin. A bypass capacitor must be connected from this pin to PGND. See DRIVER SUPPLY CAPACITOR SELECTION section. VIN 10 Power supply input pin. Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LM3481 LM3481 www.ti.com SNVS346E – NOVEMBER 2007 – REVISED APRIL 2012 ABSOLUTE MAXIMUM RATINGS (1) VIN pin Voltage -0.4V to 50V FB Pin Voltage -0.4V to 6V FA/SYNC/SD Pin Voltage -0.4V to 6V COMP Pin Voltage -0.4V to 6V UVLO Pin Voltage -0.4V to 6V VCC Pin Voltage -0.4V to 6V DR Pin Voltage -0.4V to 6V ISEN Pin Voltage –0.4V to 600 mV Peak Driver Output Current 1.0A Power Dissipation Internally Limited Storage Temperature Range −65°C to +150°C Junction Temperature ESD Susceptibility +150°C Human Body Model (2) 2 kV Lead Temperature DGS Package Vapor Phase (60 sec.) Infared (15 sec.) (1) (2) 215°C 220°C Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings indicates conditions for which the device is intended to be functional, but does not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions. The human body model is a 100 pF capacitor discharged through a 1.5kΩ resistor into each pin. RECOMMENDED OPERATING CONDITIONS (1) Supply Voltage 2.97V to 48V Junction Temperature Range −40°C to +125°C Switching Frequency Range 100 kHz to 1 MHz (1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings indicates conditions for which the device is intended to be functional, but does not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions. ELECTRICAL CHARACTERISTICS VIN=12V, RFA=40 kΩ unless otherwise indicated under the Conditions column. Typicals and limits appearing in plain type apply for TJ = 25°C. Limits appearing in boldfacetype apply over the full Operating Temperature Range (-40°C to 125°C). Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis. (1) (2) Symbol Parameter Conditions Min Typ Max 1.256 1.275 1.294 Units VFB Feedback Voltage VCOMP = 1.4V, 2.97 ≤ VIN ≤ 48V ΔVLINE Feedback Voltage Line Regulation 2.97 ≤ VIN ≤ 48V 0.003 %/V ΔVLOAD Output Voltage Load Regulation IEAO Source/Sink ±0.5 %/A VUVLOSEN Undervoltage Lockout Reference Voltage VUVLO Ramping Down IUVLO UVLO Source Current Enabled VUVLOSD UVLO Shutdown Voltage ICOMP COMP pin Current Sink VCOMP V 1.345 1.430 1.517 V 3 5 6 µA VFB = 0V VFB = 1.275V 0.7 V 640 µA 1 Nominal Switching Frequency RFA = 40 kΩ Vsync-HI Threshold for Synchronization on FA/SYNC/SD pin Synchronization Voltage Rising 1.4 V Vsync-LOW Threshold for Synchronization on FA/SYNC/SD pin Synchronization Voltage Falling 0.7 V (1) (2) 406 475 V fnom 550 kHz All limits are guaranteed at room temperature (standard type face) and at temperature extremes (bold type face). All room temperature limits are 100% tested. All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC) methods. All limits are used to calculate Average Outgoing Quality Level (AOQL). Typical numbers are at 25°C and represent the most likely norm. Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LM3481 3 LM3481 SNVS346E – NOVEMBER 2007 – REVISED APRIL 2012 www.ti.com ELECTRICAL CHARACTERISTICS (continued) VIN=12V, RFA=40 kΩ unless otherwise indicated under the Conditions column. Typicals and limits appearing in plain type apply for TJ = 25°C. Limits appearing in boldfacetype apply over the full Operating Temperature Range (-40°C to 125°C). Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis. (1) (2) Symbol RDS1 RDS2 Parameter Conditions Min Typ Max Units (ON) Driver Switch On Resistance (top) IDR = 0.2A, VIN= 5V 4 Ω (ON) Driver Switch On Resistance (bottom) IDR = 0.2A 2 Ω VIN < 6V VIN VIN ≥ 6V 6 VDR (max) Maximum Drive Voltage Swing (3) Dmax Maximum Duty Cycle tmin (on) Minimum On Time ISUPPLY Supply Current (switching) IQ Quiescent Current in Shutdown Mode VSENSE Current Sense Threshold Voltage VSC Over Load Current Limit Sense Voltage VSL Internal Compensation Ramp Voltage VOVP Output Over-voltage Protection (with respect to feedback voltage) (6) VCOMP = 1.4V 26 85 135 mV VOVP(HYS) Output Over-Voltage Protection Hysteresis VCOMP = 1.4V 28 70 106 mV Gm Error Amplifier Transconductance VCOMP = 1.4V 216 450 690 µmho AVOL Error Amplifier Voltage Gain VCOMP = 1.4V IEAO = 100 µA (Source/Sink) 35 60 66 V/V IEAO Error Amplifier Output Current (Source/ Sink) Source, VCOMP = 1.4V, VFB = 1.1V 475 640 837 µA Sink, VCOMP = 1.4V, VFB = 1.4V 31 65 100 µA Upper Limit, VFB = 0V, COMP Pin Floating 2.45 2.70 2.93 V Lower Limit, VFB = 1.4V 0.32 0.60 0.90 V 85 % 250 See (4) ns 3.7 5.0 VFA/SYNC/SD = 3V (5), VIN = 12V 9 15 VFA/SYNC/SD = 3V (5), VIN = 5V 5 10 100 160 190 mV 157 220 275 mV 90 mA µA mV VEAO Error Amplifier Output Voltage Swing tSS Internal Soft-Start Delay VFB = 1.2V, COMP Pin Floating 15 ms tr Drive Pin Rise Time Cgs = 3000 pf, VDR = 0V to 3V 25 ns tf Drive Pin Fall Time VSD Shutdown signal threshold FA/SYNC/SD pin ISD Shutdown Pin Current FA/SYNC/SD pin TSD Thermal Shutdown 165 °C Tsh Thermal Shutdown Hysteresis 10 °C θJA Thermal Resistance 200 °C/W (3) (4) (5) (6) (7) 4 Cgs = 3000 pf, VDR = 3V to 0V (7) 25 Output = High (Shutdown) Output = Low (Enable) 1.31 0.40 0.68 VSD = 5V −1 VSD = 0V 20 DGS Package V ns 1.40 V V µA The drive pin voltage, VDR, is equal to the input voltage when input voltage is less than 6V. VDR is equal to 6V when the input voltage is greater than or equal to 6V. For this test, the FA/SYNC/SD Pin is pulled to ground using a 40 kΩ resistor . For this test, the FA/SYNC/SD Pin is pulled to 3V using a 40 kΩ resistor. The over-voltage protection is specified with respect to the feedback voltage. This is because the over-voltage protection tracks the feedback voltage. The over-voltage threshold can be calculated by adding the feedback voltage (VFB) to the over-voltage protection specification. The FA/SYNC/SD pin should be pulled to VIN through a resistor to turn the regulator off. The voltage on the FA/SYNC/SD pin must be above the max limit for the Output = High longer than 30 µs to keep the regulator off and must be below the minimum limit for Output = Low to keep the regulator on. Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LM3481 LM3481 www.ti.com SNVS346E – NOVEMBER 2007 – REVISED APRIL 2012 TYPICAL PERFORMANCE CHARACTERISTICS Unless otherwise specified, VIN = 12V, TJ = 25°C. Comp Pin Voltage vs. Load Current Switching Frequency vs. RFA Figure 3. Figure 4. Efficiency vs. Load Current (3.3VIN and 12VOUT) Efficiency vs. Load Current (5VIN and 12VOUT) Figure 5. Figure 6. Efficiency vs. Load Current (9VIN and 12VOUT) Frequency vs. Temperature Figure 7. Figure 8. Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LM3481 5 LM3481 SNVS346E – NOVEMBER 2007 – REVISED APRIL 2012 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) Unless otherwise specified, VIN = 12V, TJ = 25°C. 6 COMP Pin Source Current vs. Temperature ISupply vs. Input Voltage (Non-Switching) Figure 9. Figure 10. ISupply vs. Input Voltage (Switching) Shutdown Threshold Hysteresis vs. Temperature Figure 11. Figure 12. Drive Voltage vs. Input Voltage Short Circuit Protection vs. VIN Figure 13. Figure 14. Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LM3481 LM3481 www.ti.com SNVS346E – NOVEMBER 2007 – REVISED APRIL 2012 TYPICAL PERFORMANCE CHARACTERISTICS (continued) Unless otherwise specified, VIN = 12V, TJ = 25°C. Current Sense Threshold vs. Input Voltage Compensation Ramp Amplitude vs. Input Voltage Figure 15. Figure 16. Minimum On-Time vs. Temperature Figure 17. Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LM3481 7 LM3481 SNVS346E – NOVEMBER 2007 – REVISED APRIL 2012 www.ti.com FUNCTIONAL BLOCK DIAGRAM Shutdown Detect VIN SYNC/Fixed Frequency detect FA/SYNC/SD Oscillator Set/Blankout Slope Compensation 6V Soft-start UVLO Bias Voltages UVLO Thermal Shutdown 40 éA 1.275V Reference Ramp Adjust - COMP + 6 V-I Converter EA Vfb + Vovp Overvoltage Comparator Switch Logic + + FB I-V Converter PWM Comparator R - S Q + VCC 220 mV ISEN Short-circuit Comparator One Shot + Switch Driver DR Level Shifter AGND PGND FUNCTIONAL DESCRIPTION The LM3481 uses a fixed frequency, Pulse Width Modulated (PWM), current mode control architecture. In a typical application circuit, the peak current through the external MOSFET is sensed through an external sense resistor. The voltage across this resistor is fed into the ISEN pin. This voltage is then level shifted and fed into the positive input of the PWM comparator. The output voltage is also sensed through an external feedback resistor divider network and fed into the error amplifier (EA) negative input (feedback pin, FB). The output of the error amplifier (COMP pin) is added to the slope compensation ramp and fed into the negative input of the PWM comparator. At the start of any switching cycle, the oscillator sets the RS latch using the SET/Blank-out and switch logic blocks. This forces a high signal on the DR pin (gate of the external MOSFET) and the external MOSFET turns on. When the voltage on the positive input of the PWM comparator exceeds the negative input, the RS latch is reset and the external MOSFET turns off. The voltage sensed across the sense resistor generally contains spurious noise spikes, as shown in Figure 18. These spikes can force the PWM comparator to reset the RS latch prematurely. To prevent these spikes from resetting the latch, a blank-out circuit inside the IC prevents the PWM comparator from resetting the latch for a short duration after the latch is set. This duration, called the blank-out time, is typically 250 ns and is specified as tmin (on) in the electrical characteristics section. Under extremely light load or no-load conditions, the energy delivered to the output capacitor when the external MOSFET is on during the blank-out time is more than what is delivered to the load. An over-voltage comparator inside the LM3481 prevents the output voltage from rising under these conditions by sensing the feedback (FB pin) voltage and resetting the RS latch. The latch remains in a reset state until the output decays to the nominal value. Thus the operating frequency decreases at light loads, resulting in excellent efficiency. 8 Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LM3481 LM3481 www.ti.com SNVS346E – NOVEMBER 2007 – REVISED APRIL 2012 Blank-Out prevents false reset PWM Comparator resets the RS latch VSL _ + PWM Comparator Oscillator Sets the RS Latch Tmin (on) Blank-Out time Figure 18. Basic Operation of the PWM Comparator OVER VOLTAGE PROTECTION The LM3481 has over voltage protection (OVP) for the output voltage. OVP is sensed at the feedback pin (FB). If at anytime the voltage at the feedback pin rises to VFB + VOVP, OVP is triggered. See the electrical characteristics section for limits on VFB and VOVP. OVP will cause the drive pin (DR) to go low, forcing the power MOSFET off. With the MOSFET off, the output voltage will drop. The LM3481 will begin switching again when the feedback voltage reaches VFB + (VOVP VOVP(HYS)). See the electrical characteristics section for limits on VOVP(HYS). The internal bias of the LM3481 comes from either the internal bias voltage generator as shown in the block diagram or directly from the voltage at the VIN pin. At input voltages lower than 6V the internal IC bias is the input voltage and at voltages above 6V the internal bias voltage generator of the LM3481 provides the bias. SLOPE COMPENSATION RAMP The LM3481 uses a current mode control scheme. The main advantages of current mode control are inherent cycle-by-cycle current limit for the switch and simpler control loop characteristics. It is easy to parallel power stages using current mode control since current sharing is automatic. However there is a natural instability that will occur for duty cycles, D, greater than 50% if additional slope compensation is not addressed as described below. The current mode control scheme samples the inductor current, IL, and compares the sampled signal, Vsamp, to a internally generated control signal, Vc. The current sense resistor, RSEN, as shown in Figure 22, converts the sampled inductor current, IL, to the voltage signal, Vsamp, that is proportional to IL such that: Vsamp = IL x RSEN The rising and falling slopes, M1 and −M2 respectively, of Vsamp are also proportional to the inductor current rising and falling slopes, Mon and −Moff respectively. Where Mon is the inductor slope during the switch on-time and −Moff is the inductor slope during the switch off-time and are related to M1 and −M2 by: M1 = Mon x RSEN −M2 = −Moff x RSEN For the boost topology: Mon = VIN / L −Moff = (VIN − VOUT) / L M1 = [VIN / L] x RSEN −M2 = [(VIN − VOUT) / L] x RSEN M2 = [(VOUT − VIN) / L] x RSEN Current mode control has an inherent instability for duty cycles greater than 50%, as shown in Figure 19, where the control signal slope, MC, equals zero. In Figure 19, a small increase in the load current causes the sampled signal to increase by ΔVsamp0. The effect of this load change, ΔVsamp1, at the end of the first switching cycle is : M D 'Vsamp1 = - 2 'Vsamp0 = 'Vsamp0 M1 1-D Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LM3481 9 LM3481 SNVS346E – NOVEMBER 2007 – REVISED APRIL 2012 www.ti.com From the above equation, when D > 0.5, ΔVsamp1 will be greater than ΔVsamp0. In other words, the disturbance is divergent. So a very small perturbation in the load will cause the disturbance to increase. To ensure that the perturbed signal converges we must maintain: - M2 < M1 1 Control Signal MC = 0 Perturbed Signal -M2 _ M1 'Vsamp0 'Vsamp1 Steady State Signal Vsamp + PWM Comparator (1-D)TS DTS Figure 19. Sub-Harmonic Oscillation for D>0.5 -MC Control Signal Compensation Ramp VSL Perturbed Signal -M2 M1 'Vsamp0 _ Vsamp + 'Vsamp1 Steady State Signal Vsamp DTS Control Signal PWM Comparator (1-D)TS Figure 20. Compensation Ramp Avoids Sub-Harmonic Oscillation To prevent the sub-harmonic oscillations, a compensation ramp is added to the control signal, as shown in Figure 20. With the compensation ramp, ΔVsamp1 and the convergence criteria are expressed by, M - MC 'Vsamp1 = - 2 'Vsamp0 M 1 + MC - M 2 - MC <1 M1 + MC The compensation ramp has been added internally in the LM3481. The slope of this compensation ramp has been selected to satisfy most applications, and it's value depends on the switching frequency. This slope can be calculated using the formula: MC = VSL x fS In the above equation, VSL is the amplitude of the internal compensation ramp and fS is the controller's switching frequency. Limits for VSL have been specified in the electrical characteristics section. In order to provide the user additional flexibility, a patented scheme has been implemented inside the IC to increase the slope of the compensation ramp externally, if the need arises. Adding a single external resistor, RSL(as shown in Figure 22) increases the amplitude of the compensation ramp as shown in Figure 21. 10 Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LM3481 LM3481 www.ti.com SNVS346E – NOVEMBER 2007 – REVISED APRIL 2012 Control Signal Compensation Ramp with RSL Control Signal Compensation Ramp without RSL 'VSL -MC VSL Figure 21. Additional Slope Compensation Added Using External Resistor RSL Where, ΔVSL = K x RSL K = 40 µA typically and changes slightly as the switching frequency changes. Figure 23 shows the effect the current K has on ΔVSLand different values of RSL as the switching frequency changes. A more general equation for the slope compensation ramp, MC, is shown below to include ΔVSL caused by the resistor RSL. MC = (VSL + ΔVSL) x fS It is good design practice to only add as much slope compensation as needed to avoid subharmonic oscillation. Additional slope compensation minimizes the influence of the sensed current in the control loop. With very large slope compensation the control loop characteristics are similar to a voltage mode regulator which compares the error voltage to a saw tooth waveform rather than the inductor current. VIN L1 D1 VOUT + DR COUT Q1 LM3481 ISEN RSL RSEN CSEN Figure 22. Increasing the Slope of the Compensation Ramp Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LM3481 11 LM3481 SNVS346E – NOVEMBER 2007 – REVISED APRIL 2012 www.ti.com Figure 23. ΔVSL vs RSL FREQUENCY ADJUST/SYNCHRONIZATION/SHUTDOWN The switching frequency of the LM3481 can be adjusted between 100 kHz and 1 MHz using a single external resistor. This resistor must be connected between the FA/SYNC/SD pin and ground, as shown in Figure 24. Please refer to the typical performance characteristics to determine the value of the resistor required for a desired switching frequency. The following equation can also be used to estimate the frequency adjust resistor. Where fS is in kHz and RFA in kΩ. RFA = 22 x 103 - 5.74 fS The LM3481 can be synchronized to an external clock. The external clock must be connected between the FA/SYNC/SD pin and ground, as shown in Figure 25. The frequency adjust resistor may remain connected while synchronizing a signal, therefore if there is a loss of signal, the switching frequency will be set by the frequency adjust resistor. It is also necessary to have the width of the synchronization pulse narrower than the duty cycle of the converter and to have the synchronization pulse width ≥ 300 ns. The FA/SYNC/SD pin also functions as a shutdown pin. If a high signal (refer to the electrical characteristics section for definition of high signal) appears on the FA/SYNC/SD pin, the LM3481 stops switching and goes into a low current mode. The total supply current of the IC reduces to 5 µA, typically, under these conditions. Figure 26 and Figure 27 shows an implementation of a shutdown function when operating in frequency adjust mode and synchronization mode respectively. In frequency adjust mode, connecting the FA/SYNC/SD pin to ground forces the clock to run at a certain frequency. Pulling this pin high shuts down the IC. In frequency adjust or synchronization mode, a high signal for more than 30 µs shuts down the IC. RFA FA/SYNC/SD LM3481 Figure 24. Frequency Adjust 12 Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LM3481 LM3481 www.ti.com SNVS346E – NOVEMBER 2007 – REVISED APRIL 2012 RFA FA/SYNC/SD LM3481 Freq. clock 100 kHz to 1 MHz Figure 25. Frequency Synchronization RFA 10 k: >1.3V FA/SYNC/SD LM3481 MOSFET State On-Normal Operation OFF- Shutdown Figure 26. Shutdown Operation in Frequency Adjust Mode 30 Ps 40 k: FA/SYNC/SD LM3481 DR Figure 27. Shutdown Operation in Synchronization Mode UNDER VOLTAGE LOCKOUT (UVLO) Pin The UVLO pin provides user programmable enable and shutdown thresholds. The UVLO pin is compared to an internal reference of 1.43V (typical), and a resistor divider programs the enable threshold, VEN. When the IC is enabled, a 5 μA current is sourced out of the UVLO pin, which effectively causes a hysteresis, and the UVLO shutdown threshold, VSH, is now lower than the enable threshold. Setting these thresholds requires two resistors connected from the VIN pin to the UVLO pin and from the UVLO pin to GND (see Figure 28). Select the desired enable, VEN, and UVLO shutdown, VSH, threshold voltages and use the following equations to determine the resistance values: 1.43V ± VSH 1.43V § x ¨1 + R8 = IUVLO © VEN ± 1.43V § ¨ © § VEN -1 R7 = R8 x ¨ © 1.43V § ¨ © Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LM3481 13 LM3481 SNVS346E – NOVEMBER 2007 – REVISED APRIL 2012 www.ti.com VIN IUVLO R7 2 + UVLO R8 VUVLOSEN + - Figure 28. UVLO Pin Resistor Divider If the UVLO pin function is not desired, select R8 and R7 of equal magnitude greater than 100 kΩ. This will allow VIN to be in control of the UVLO thresholds. The UVLO pin may also be used to implement the enable/disable function. If a signal pulls the UVLO pin below the 1.43V (typical) threshold, the converter will be disabled. SHORT CIRCUIT PROTECTION When the voltage across the sense resistor (measured on the ISEN Pin) exceeds 220 mV, short-circuit current limit gets activated. A comparator inside the LM3481 reduces the switching frequency by a factor of 8 and maintains this condition until the short is removed. TYPICAL APPLICATIONS The LM3481 may be operated in either continuous or discontinuous conduction mode. The following applications are designed for continuous conduction operation. This mode of operation has higher efficiency and lower EMI characteristics than the discontinuous mode. Boost Converter The most common topology for the LM3481 is the boost or step-up topology. The boost converter converts a low input voltage into a higher output voltage. The basic configuration for a boost regulator is shown in Figure 29. In continuous conduction mode (when the inductor current never reaches zero at steady state), the boost regulator operates in two cycles. In the first cycle of operation, MOSFET Q is turned on and energy is stored in the inductor. During this cycle, diode D1 is reverse biased and load current is supplied by the output capacitor, COUT. In the second cycle, MOSFET Q is off and the diode is forward biased. The energy stored in the inductor is transferred to the load and output capacitor. The ratio of these two cycles determines the output voltage. The output voltage is defined as: (ignoring the voltage drop across the MOSFET and the diode), or VOUT + VD1 - VQ = VIN - VQ 1-D where D is the duty cycle of the switch, VD1 is the forward voltage drop of the diode, and VQ is the drop across the MOSFET when it is on. The following sections describe selection of components for a boost converter. 14 Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LM3481 LM3481 www.ti.com SNVS346E – NOVEMBER 2007 – REVISED APRIL 2012 L VIN D1 + VOUT + Q PWM L COUT L D1 + VOUT + + VOUT RLOAD VIN + - - COUT + + VIN - COUT RLOAD - Figure 29. Simplified Boost Converter Diagram (a) First cycle of operation. (b) Second cycle of operation POWER INDUCTOR SELECTION The inductor is one of the two energy storage elements in a boost converter. Figure 30 shows how the inductor current varies during a switching cycle. The current through an inductor is quantified as: IL (A) VIN VIN - VOUT L L 'i L IL_AVG t (s) D*Ts Ts (a) ID (A) VIN - VOUT L ID_AVG = IOUT_AVG t (s) D*Ts Ts (b) ISW (A) VIN L ISW_AVG t (s) D*Ts Ts (c) Figure 30. a. Inductor current b. Diode current c. Switch current If VL(t) is constant, diL(t)/dt must be constant. Hence, for a given input voltage and output voltage, the current in the inductor changes at a constant rate. Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LM3481 15 LM3481 SNVS346E – NOVEMBER 2007 – REVISED APRIL 2012 www.ti.com The important quantities in determining a proper inductance value are IL (the average inductor current) and ΔiL (the inductor current ripple difference between the peak inductor current and the average inductor current). If ΔiL is larger than IL, the inductor current will drop to zero for a portion of the cycle and the converter will operate in discontinuous conduction mode. If ΔiL is smaller than IL, the inductor current will stay above zero and the converter will operate in continuous conduction mode. All the analysis in this datasheet assumes operation in continuous conduction mode. To operate in continuous conduction mode, the following conditions must be met: IL > ΔiL Choose the minimum IOUT to determine the minimum L. A common choice is to set (2 x ΔiL) to 30% of IL. Choosing an appropriate core size for the inductor involves calculating the average and peak currents expected through the inductor. In a boost converter, IL = IOUT 1-D IL_peak = IL(max) + ΔiL(max) A core size with ratings higher than these values should be chosen. If the core is not properly rated, saturation will dramatically reduce overall efficiency. The LM3481 can be set to switch at very high frequencies. When the switching frequency is high, the converter can operate with very small inductor values. With a small inductor value, the peak inductor current can be extremely higher than the output currents, especially under light load conditions. The LM3481 senses the peak current through the switch. The peak current through the switch is the same as the peak current calculated above. Programming the Output Voltage and Output Current The output voltage can be programmed using a resistor divider between the output and the feedback pins, as shown in Figure 31. The resistors are selected such that the voltage at the feedback pin is 1.275V. RF1 and RF2 can be selected using the equation, R VOUT = 1.275 (1+ F1 ) RF2 A 100 pF capacitor may be connected between the feedback and ground pins to reduce noise. The maximum amount of current that can be delivered at the output can be controlled by the sense resistor, RSEN. Current limit occurs when the voltage that is generated across the sense resistor equals the current sense threshold voltage, VSENSE. Limits for VSENSE have been specified in the electrical characteristics section. This can be expressed as: Isw(peak) x RSEN = VSENSE- D x VSL The peak current through the switch is equal to the peak inductor current. Isw(peak) = IL(max) + ΔiL Therefore for a boost converter (D x VIN) IOUT(max) + Isw(peak) = (1-D) (2 x fS x L) 16 Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LM3481 LM3481 www.ti.com SNVS346E – NOVEMBER 2007 – REVISED APRIL 2012 Combining the two equations yields an expression for RSEN VSENSE - (D x VSL) RSEN = (D x VIN) IOUT(max) + (1-D) (2 x fS x L) Evaluate RSEN at the maximum and minimum VIN values and choose the smallest RSEN calculated. VIN L D1 DR VOUT Q + LM3481 COUT ISEN FB RF1 RSEN RF2 Figure 31. Adjusting the Output Voltage Current Limit with Additional Slope Compensation If an external slope compensation resistor is used (see Figure 22) the internal control signal will be modified and this will have an effect on the current limit. If RSL is used, then this will add to the existing slope compensation. The command voltage, VCS, will then be given by: VCS = VSENSE − D x (VSL + ΔVSL) Where VSENSE is a defined parameter in the electrical characteristics section and ΔVSL is the additional slope compensation generated as discussed in the Slope Compensation Ramp section. This changes the equation for RSEN to: VSENSE - D x (VSL+'VSL) RSEN = (D x VIN) IOUT(max) + (1-D) (2 x fS x L) Note that since ΔVSL = RSL x K as defined earlier, RSLcan be used to provide an additional method for setting the current limit. In some designs RSL can also be used to help filter noise to keep the ISEN pin quiet. Power Diode Selection Observation of the boost converter circuit shows that the average current through the diode is the average load current, and the peak current through the diode is the peak current through the inductor. The diode should be rated to handle more than the inductor peak current. The peak diode current can be calculated using the formula: ID(Peak) = [IOUT/ (1−D)] + ΔiL In the above equation, IOUT is the output current and ΔiL has been defined in Figure 30. The peak reverse voltage for a boost converter is equal to the regulator output voltage. The diode must be capable of handling this peak reverse voltage. To improve efficiency, a low forward drop Schottky diode is recommended. Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LM3481 17 LM3481 SNVS346E – NOVEMBER 2007 – REVISED APRIL 2012 www.ti.com Power MOSFET Selection The drive pin, DR, of the LM3481 must be connected to the gate of an external MOSFET. In a boost topology, the drain of the external N-Channel MOSFET is connected to the inductor and the source is connected to the ground. The drive pin voltage, VDR, depends on the input voltage (see typical performance characteristics). In most applications, a logic level MOSFET can be used. For very low input voltages, a sub-logic level MOSFET should be used. The selected MOSFET directly controls the efficiency. The critical parameters for selection of a MOSFET are: 1. Minimum threshold voltage, VTH(MIN) 2. On-resistance, RDS(ON) 3. Total gate charge, Qg 4. Reverse transfer capacitance, CRSS 5. Maximum drain to source voltage, VDS(MAX) The off-state voltage of the MOSFET is approximately equal to the output voltage. VDS(MAX) of the MOSFET must be greater than the output voltage. The power losses in the MOSFET can be categorized into conduction losses and ac switching or transition losses. RDS(ON) is needed to estimate the conduction losses. The conduction loss, PCOND, is the I2R loss across the MOSFET. The maximum conduction loss is given by: IOUT(max) 2 PCOND(MAX) = DMAXRDS(ON) 1 - DMAX where DMAX is the maximum duty cycle. VIN(MIN) DMAX = 1VOUT At high switching frequencies the switching losses may be the largest portion of the total losses. The switching losses are very difficult to calculate due to changing parasitics of a given MOSFET in operation. Often, the individual MOSFET datasheet does not give enough information to yield a useful result. The following formulas give a rough idea how the switching losses are calculated: ILmax x Vout x fSW x (tLH + tHL) PSW = 2 RGate Qgs x tLH = Qgd + VDR - Vgsth 2 Input Capacitor Selection Due to the presence of an inductor at the input of a boost converter, the input current waveform is continuous and triangular, as shown in Figure 30. The inductor ensures that the input capacitor sees fairly low ripple currents. However, as the input capacitor gets smaller, the input ripple goes up. The rms current in the input capacitor is given by: (VOUT - VIN)VIN ICIN(RMS) = 'iL / 3 = 12 VOUTLfS The input capacitor should be capable of handling the rms current. Although the input capacitor is not as critical in a boost application, low values can cause impedance interactions. Therefore a good quality capacitor should be chosen in the range of 100 µF to 200 µF. If a value lower than 100 µF is used, then problems with impedance interactions or switching noise can affect the LM3481. To improve performance, especially with VIN below 8V, it is recommended to use a 20Ω resistor at the input to provide a RC filter. This resistor is placed in series with the VIN pin with only a bypass capacitor attached to the VIN pin directly (see Figure 32). A 0.1 µF or 1 µF ceramic capacitor is necessary in this configuration. The bulk input capacitor and inductor will connect on the other side of the resistor with the input power supply. 18 Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LM3481 LM3481 www.ti.com SNVS346E – NOVEMBER 2007 – REVISED APRIL 2012 RIN VIN VIN LM3481 CBYPASS CIN Figure 32. Reducing IC Input Noise Output Capacitor Selection The output capacitor in a boost converter provides all the output current when the inductor is charging. As a result it sees very large ripple currents. The output capacitor should be capable of handling the maximum rms current. The rms current in the output capacitor is: Where 'iL = DVIN 2LfS and D, the duty cycle is equal to (VOUT − VIN)/VOUT. The ESR and ESL of the output capacitor directly control the output ripple. Use capacitors with low ESR and ESL at the output for high efficiency and low ripple voltage. Surface mount tantalums, surface mount polymer electrolytic and polymer tantalum, Sanyo- OSCON, or multi-layer ceramic capacitors are recommended at the output. Driver Supply Capacitor Selection A good quality ceramic bypass capacitor must be connected from the VCC pin to the PGND pin for proper operation. This capacitor supplies the transient current required by the internal MOSFET driver, as well as filtering the internal supply voltage for the controller. A value of between 0.47µF and 4.7µF is recommended. Layout Guidelines Good board layout is critical for switching controllers such as the LM3481. First the ground plane area must be sufficient for thermal dissipation purposes and second, appropriate guidelines must be followed to reduce the effects of switching noise. Switch mode converters are very fast switching devices. In such devices, the rapid increase of input current combined with the parasitic trace inductance generates unwanted Ldi/dt noise spikes. The magnitude of this noise tends to increase as the output current increases. This parasitic spike noise may turn into electromagnetic interference (EMI), and can also cause problems in device performance. Therefore, care must be taken in layout to minimize the effect of this switching noise. The current sensing circuit in current mode devices can be easily effected by switching noise. This noise can cause duty cycle jitter which leads to increased spectral noise. Although the LM3481 has 250 ns blanking time at the beginning of every cycle to ignore this noise, some noise may remain after the blanking time. The most important layout rule is to keep the AC current loops as small as possible. Figure 33 shows the current flow of a boost converter. The top schematic shows a dotted line which represents the current flow during onstate and the middle schematic shows the current flow during off-state. The bottom schematic shows the currents we refer to as AC currents. They are the most critical ones since current is changing in very short time periods. The dotted lined traces of the bottom schematic are the once to make as short as possible. Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LM3481 19 LM3481 SNVS346E – NOVEMBER 2007 – REVISED APRIL 2012 www.ti.com Figure 33. Current Flow In A Boost Application The PGND and AGND pins have to be connected to the same ground very close to the IC. To avoid ground loop currents attach all the grounds of the system only at one point. A ceramic input capacitor should be connected as close as possible to the Vin pin and grounded close to the GND pin. For a layout example please see Application Note 1204 (SNVA042). For more information about layout in switch mode power supplies please refer to Application Note 1229 (SNVA054). Compensation For detailed explanation on how to select the right compensation components to attach to the compensation pin for a boost topology please see Application Note 1286 (SNVA067). When calculating the Error Amplifier DC gain, AEA, ROUT = 152 kΩ for the LM3481. DESIGNING SEPIC USING LM3481 Since the LM3481 controls a low-side N-Channel MOSFET, it can also be used in SEPIC (Single Ended Primary Inductance Converter) applications. An example of SEPIC using the LM3481 is shown in Figure 34. As shown in Figure 34, the output voltage can be higher or lower than the input voltage. The SEPIC uses two inductors to step-up or step-down the input voltage. The inductors L1 and L2 can be two discrete inductors or two windings of a coupled transformer since equal voltages are applied across the inductor throughout the switching cycle. Using two discrete inductors allows use of catalog magnetics, as opposed to a custom transformer. The input ripple can be reduced along with size by using the coupled windings of transformer for L1 and L2. Due to the presence of the inductor L1 at the input, the SEPIC inherits all the benefits of a boost converter. One main advantage of SEPIC over a boost converter is the inherent input to output isolation. The capacitor CS isolates the input from the output and provides protection against shorted or malfunctioning load. Hence, the SEPIC is useful for replacing boost circuits when true shutdown is required. This means that the output voltage falls to 0V when the switch is turned off. In a boost converter, the output can only fall to the input voltage minus a diode drop. The duty cycle of a SEPIC is given by: In the above equation, VQ is the on-state voltage of the MOSFET, Q1, and VDIODE is the forward voltage drop of the diode. 20 Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LM3481 LM3481 www.ti.com SNVS346E – NOVEMBER 2007 – REVISED APRIL 2012 Power MOSFET Selection As in a boost converter, the parameters governing the selection of the MOSFET are the minimum threshold voltage, VTH(MIN), the on-resistance, RDS(ON), the total gate charge, Qg, the reverse transfer capacitance, CRSS, and the maximum drain to source voltage, VDS(MAX). The peak switch voltage in a SEPIC is given by: VSW(PEAK) = VIN + VOUT + VDIODE The selected MOSFET should satisfy the condition: VDS(MAX) > VSW(PEAK) The peak switch current is given by: 'IL1 + 'IL2 ISWPEAK = IL1(AVG) + IOUT + 2 Where ΔIL1 and ΔIL2 are the peak-to-peak inductor ripple currents of inductors L1 and L2 respectively. The rms current through the switch is given by: Power Diode Selection The Power diode must be selected to handle the peak current and the peak reverse voltage. In a SEPIC, the diode peak current is the same as the switch peak current. The off-state voltage or peak reverse voltage of the diode is VIN + VOUT. Similar to the boost converter, the average diode current is equal to the output current. Schottky diodes are recommended. R7 10 k: VIN = 3.0V to 24V D2 5.1V L1 10 PH VIN ISEN 0.47 µF RC 4.7 k: CC 0.1 PF UVLO COMP FB RF2 20 k: AGND MBRS130LT3 VCC LM3481 CS Q1 IRF7807 DR PGND D1 L2 10 PH VOUT = 5V, 1A + COUT 100 PF, 10V FA/SYNC/SD RFA 40 k: RF1 60 k: 1 PF, ceramic + CIN 15 PF, 35V x2 CSEN 1 nF RSEN 0.05: Figure 34. Typical SEPIC Converter Selection of Inductors L1 and L2 Proper selection of the inductors L1 and L2 to maintain constant current mode requires calculations of the following parameters. Average current in the inductors: IL2AVE = IOUT Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LM3481 21 LM3481 SNVS346E – NOVEMBER 2007 – REVISED APRIL 2012 www.ti.com Peak to peak ripple current, to calculate core loss if necessary: Maintaining the condition IL > ΔIL/2 to ensure continuous conduction mode yields the following minimum values for L1 and L2: (VIN - VQ)(1-D) L1 > 2IOUTfS L2 > (VIN - VQ)D 2IOUTfS Peak current in the inductor, to ensure the inductor does not saturate: IL1PK must be lower than the maximum current rating set by the current sense resistor. The value of L1 can be increased above the minimum recommended value to reduce input ripple and output ripple. However, once ΔIL1 is less than 20% of IL1AVE, the benefit to output ripple is minimal. By increasing the value of L2 above the minimum recommendation, ΔIL2 can be reduced, which in turn will reduce the output ripple voltage: 'VOUT = ( IOUT 1-D + 'IL2 2 ) ESR where ESR is the effective series resistance of the output capacitor. If L1 and L2 are wound on the same core, then L1 = L2 = L. All the equations above will hold true if the inductance is replaced by 2L. A good choice for transformer with equal turns is Coiltronics CTX series Octopack. Sense Resistor Selection The peak current through the switch, ISWPEAK, can be adjusted using the current sense resistor, RSEN, to provide a certain output current. Resistor RSEN can be selected using the formula: VSENSE - D x (VSL+'VSL) RSEN = ISWPEAK SEPIC CAPACITOR SELECTION The selection of SEPIC capacitor, CS, depends on the rms current. The rms current of the SEPIC capacitor is given by: 22 Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LM3481 LM3481 www.ti.com SNVS346E – NOVEMBER 2007 – REVISED APRIL 2012 The SEPIC capacitor must be rated for a large ACrms current relative to the output power. This property makes the SEPIC much better suited to lower power applications where the rms current through the capacitor is small (relative to capacitor technology). The voltage rating of the SEPIC capacitor must be greater than the maximum input voltage. Tantalum capacitors are the best choice for SMT, having high rms current ratings relative to size. Ceramic capacitors could be used, but the low C values will tend to cause larger changes in voltage across the capacitor due to the large currents, and high C value ceramics are expensive. Electrolytics work well for through hole applications where the size required to meet the rms current rating can be accommodated. There is an energy balance between CS and L1, which can be used to determine the value of the capacitor. The basic energy balance equation is: 1 1 2 C 'V 2 = (L1)'IL1 2 S S 2 Where is the ripple voltage across the SEPIC capacitor, and (VIN - VQ) D 'IL1 = (L1)fS is the ripple current through the inductor L1. The energy balance equation can be solved to provide a minimum value for CS: CS t L1 IOUT2 (VIN - VQ)2 INPUT CAPACITOR SELECTION Similar to a boost converter, the SEPIC has an inductor at the input. Hence, the input current waveform is continuous and triangular. The inductor ensures that the input capacitor sees fairly low ripple currents. However, as the input capacitor gets smaller, the input ripple goes up. The rms current in the input capacitor is given by: D ICIN(RMS) = 'IL1 / 12 = 2 3 VIN - VQ (L1)fS The input capacitor should be capable of handling the rms current. Although the input capacitor is not as critical in a SEPIC application, low values can cause impedance interactions. Therefore a good quality capacitor should be chosen in the range of 100 µF to 200 µF. If a value lower than 100 µF is used, then problems with impedance interactions or switching noise can affect the LM3481. To improve performance, especially with VIN below 8V, it is recommended to use a 20Ω resistor at the input to provide a RC filter. This resistor is placed in series with the VIN pin with only a bypass capacitor attached to the VIN pin directly (see Figure 32). A 0.1 µF or 1 µF ceramic capacitor is necessary in this configuration. The bulk input capacitor and inductor will connect on the other side of the resistor with the input power supply. OUTPUT CAPACITOR SELECTION The output capacitor of the SEPIC sees very large ripple currents similar to the output capacitor of a boost converter. The rms current through the output capacitor is given by: IRMS = 2 2 ISWPEAK2 - ISWPEAK ('IL1 + 'IL2) + ('IL1 + 'IL2) (1-D) - IOUT 3 The ESR and ESL of the output capacitor directly control the output ripple. Use capacitors with low ESR and ESL at the output for high efficiency and low ripple voltage. Surface mount tantalums, surface mount polymer electrolytic and polymer tantalum, Sanyo- OSCON, or multi-layer ceramic capacitors are recommended at the output for low ripple. Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LM3481 23 LM3481 SNVS346E – NOVEMBER 2007 – REVISED APRIL 2012 www.ti.com OTHER APPLICATION CIRCUITS R7 121 k: VIN = 5V R8 121 k: C8 390 pF ISEN VIN UVLO L1 6.8 PH 1 PF VCC C9 COMP RC 22.6 k: CC 82 nF FB RF2 20 k: RF1 169 k: LM3481 Q1 DR D1 + CIN1, CIN2 150 PF VOUT = 12V IOUT = 1.8A + COUT1, COUT2 150 PF PGND AGND FA/SYNC/SD RFA 90.9 k: CSEN 1 nF RSEN 20 m: Figure 35. Typical High Efficiency Step-Up (Boost) Converter 24 Submit Documentation Feedback Copyright © 2007–2012, Texas Instruments Incorporated Product Folder Links: LM3481 PACKAGE OPTION ADDENDUM www.ti.com 11-Apr-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Top-Side Markings (3) (4) LM3481MM/NOPB ACTIVE VSSOP DGS 10 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SJPB LM3481MMX/NOPB ACTIVE VSSOP DGS 10 3500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SJPB LM3481QMM/NOPB ACTIVE VSSOP DGS 10 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SUAB LM3481QMMX/NOPB ACTIVE VSSOP DGS 10 3500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 SUAB (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Top-Side Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. 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Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 11-Apr-2013 OTHER QUALIFIED VERSIONS OF LM3481, LM3481-Q1 : • Catalog: LM3481 • Automotive: LM3481-Q1 NOTE: Qualified Version Definitions: • Catalog - TI's standard catalog product • Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 11-Oct-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant LM3481MM/NOPB VSSOP DGS 10 1000 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 LM3481MMX/NOPB VSSOP DGS 10 3500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 LM3481QMM/NOPB VSSOP DGS 10 1000 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 LM3481QMMX/NOPB VSSOP DGS 10 3500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 11-Oct-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM3481MM/NOPB VSSOP DGS 10 1000 210.0 185.0 35.0 LM3481MMX/NOPB VSSOP DGS 10 3500 367.0 367.0 35.0 LM3481QMM/NOPB VSSOP DGS 10 1000 210.0 185.0 35.0 LM3481QMMX/NOPB VSSOP DGS 10 3500 367.0 367.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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