AP9U18GH
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Low On-resistance
▼ Low Gate Voltage Drive
BVDSS
20V
RDS(ON)
14mΩ
ID
G
37A
S
Description
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
G D
S
TO-252(H)
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±12
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
37
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
24
A
140
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
25
W
Linear Derating Factor
0.2
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
.
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
5.0
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
200831071-1/4
AP9U18GH
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
20
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=4.5V, ID=18A
-
-
14
mΩ
VGS=2.5V, ID=9A
-
-
28
mΩ
0.5
-
1.5
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=18A
-
18
-
S
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Leakage
VGS= ±12V
-
-
±100
nA
ID=18A
-
21
34
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
2.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9
-
nC
VDS=10V
-
8.3
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=18A
-
102
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
24
-
ns
tf
Fall Time
RD=0.56Ω
-
12
-
ns
Ciss
Input Capacitance
VGS=0V
-
1280 2050
pF
Coss
Output Capacitance
VDS=20V
-
175
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
170
-
pF
Min.
Typ.
IS=18A, VGS=0V
-
-
1.2
V
IS=10A, VGS=0V,
-
27
-
ns
dI/dt=100A/µs
-
17
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP9U18GH
80
100
5.0V
4.5V
3.5V
2.5V
ID , Drain Current (A)
80
5.0V
4.5V
3.5V
2.5V
o
T C =150 C
ID , Drain Current (A)
o
T C =25 C
60
V G = 2 .0V
40
60
V G = 2 .0V
40
20
20
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
1.4
ID=9A
T C =25 ℃
I D =18A
V G =4.5V
18
Normalized RDS(ON)
1.2
RDS(ON) (mΩ)
16
14
12
1
0.8
10
8
0.6
0
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
VGS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
20
Normalized VGS(th) (V)
16
12
IS(A)
T j =150 o C
T j =25 o C
8
1.2
0.6
4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP9U18GH
f=1.0MHz
10000
12
9
I D = 18 A
V DS = 16 V
C (pF)
VGS , Gate to Source Voltage (V)
15
C iss
1000
6
3
C oss
C rss
100
0
0
10
20
30
40
1
50
5
Q G , Total Gate Charge (nC)
Fig7. Gate Charge Characteristics
13
17
21
25
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (R thjc)
1
100
ID (A)
9
V DS , Drain-to-Source Voltage (V)
100us
10
1ms
10ms
100ms
DC
T c =25 o C
Single Pulse
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252
D
D1
E2
MIN
NOM
MAX
A2
1.80
2.30
2.80
A3
0.40
0.50
0.60
B1
0.40
0.70
1.00
D
6.00
6.50
7.00
D1
4.80
5.35
5.90
E3
3.50
4.00
4.50
E3
E1
B1
F1
e
Millimeters
SYMBOLS
F
2.20
2.63
3.05
F1
0.5
0.85
1.20
E1
5.10
5.70
6.30
E2
0.50
1.10
1.80
e
--
2.30
--
C
0.35
0.50
0.65
F
e
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
R : 0.127~0.381
A2
A3
(0.1mm
C
Part Marking Information & Packing : TO-252
Part Number
Package Code
meet Rohs requirement
9U18GH
LOGO
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence