CSD16556Q5B www.ti.com SLPS432B – NOVEMBER 2012 – REVISED JANUARY 2013 25-V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16556Q5B PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 TA = 25°C unless otherwise stated Extremely Low Resistance Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package • Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems Optimized for Synchronous FET Applications DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in synchronous rectification and other power conversion applications. Top View S 1 8 D S 2 7 D S 6 3 D 5 4 25 V Qg Gate Charge Total (4.5V) 36 nC Qgd Gate Charge Gate to Drain 12 RDS(on) Drain to Source On Resistance VGS(th) Threshold Voltage nC VGS = 4.5V 1.2 mΩ VGS = 10V 0.9 mΩ 1.4 V Device Package Media CSD16556Q5B SON 5-mm × 6-mm Plastic Package 13-Inch Reel Qty Ship 2500 Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage ±20 V Continuous Drain Current (Package limited), TC = 25°C 100 Continuous Drain Current (Silicon limited), TC = 25°C 263 Continuous Drain Current(1) 40 ID A (1)(2) A IDM Pulsed Drain Current, TA = 25°C 249 A PD Power Dissipation(1) 3.2 W TJ, TSTG Operating Junction and Storage Temperature Range –55 to 150 °C EAS Avalanche Energy, single pulse ID = 103A, L = 0.1mH, RG = 25Ω 530 mJ (1) Typical RθJA = 40°C/W on 1-inch2 (6.45-cm2), 2-oz. (0.071mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. (2) Pulse duration ≤300μs, duty cycle ≤2% D G UNIT Drain to Source Voltage ORDERING INFORMATION APPLICATIONS • TYPICAL VALUE VDS D P0093-01 SPACE RDS(on) vs VGS SPACE GATE CHARGE 10 TC = 25°C Id = 30A TC = 125ºC Id = 30A 3.5 VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance (mΩ) 4 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 VGS - Gate-to- Source Voltage (V) 12 G001 ID = 30A VDS =15V 8 6 4 2 0 0 10 20 30 40 50 60 Qg - Gate Charge (nC) 70 80 G001 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2012–2013, Texas Instruments Incorporated CSD16556Q5B SLPS432B – NOVEMBER 2012 – REVISED JANUARY 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, IDS = 250μA IDSS Drain to Source Leakage Current VGS = 0V, VDS = 24V IGSS Gate to Source Leakage Current VDS = 0V, VGS = 20V VGS(th) Gate to Source Threshold Voltage VDS = VGS, IDS = 250μA RDS(on) Drain to Source On Resistance gfs Transconductance 25 1.2 V 1 μA 100 nA 1.4 1.7 V 1.2 1.5 mΩ VGS = 10V, IDS = 30A 0.9 1.07 mΩ VDS = 15V, IDS = 30A 191 VGS = 4.5V, IDS = 30A S Dynamic Characteristics Ciss Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz 4750 6180 pF Coss Output Capacitance 2270 2950 pF Crss Reverse Transfer Capacitance 220 280 pF RG Series Gate Resistance 0.7 1.4 Ω Qg Gate Charge Total (4.5V) 36 47 nC Qgd Gate Charge Gate to Drain 12 nC Qgs Gate Charge Gate to Source 11 nC Qg(th) Gate Charge at Vth 7.0 nC Qoss Output Charge 45 nC td(on) Turn On Delay Time 17 ns tr Rise Time 34 ns td(off) Turn Off Delay Time 25 ns tf Fall Time 13 ns VDS = 15V, IDS = 30A VDS = 15V, VGS = 0V VDS = 15V, VGS = 4.5V, IDS = 30A,RG = 2Ω Diode Characteristics VSD Diode Forward Voltage Qrr Reverse Recovery Charge trr Reverse Recovery Time ISD = 30A, VGS = 0V 0.8 VDD= 15V, IF = 30A, di/dt = 300A/μs 1 V 84 nC 41 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) MAX UNIT RθJC Thermal Resistance Junction to Case (1) PARAMETER 1.1 °C/W RθJA Thermal Resistance Junction to Ambient (1) (2) 50 °C/W (1) (2) 2 MIN TYP RθJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. Submit Documentation Feedback Copyright © 2012–2013, Texas Instruments Incorporated Product Folder Links: CSD16556Q5B CSD16556Q5B www.ti.com GATE SLPS432B – NOVEMBER 2012 – REVISED JANUARY 2013 GATE Source N-Chan 5x6 QFN TTA MIN Rev3 N-Chan 5x6 QFN TTA MAX Rev3 Max RθJA = 50°C/W when mounted on 1 inch2 (6.45 cm2) of 2oz. (0.071-mm thick) Cu. Source Max RθJA = 125°C/W when mounted on a minimum pad area of 2-oz. (0.071-mm thick) Cu. DRAIN DRAIN M0137-02 M0137-01 TYPICAL MOSFET CHARACTERISTICS (TA = 25°C unless otherwise stated) Figure 1. Transient Thermal Impedance Submit Documentation Feedback Copyright © 2012–2013, Texas Instruments Incorporated Product Folder Links: CSD16556Q5B 3 CSD16556Q5B SLPS432B – NOVEMBER 2012 – REVISED JANUARY 2013 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 200 180 IDS - Drain-to-Source Current (A) IDS - Drain-to-Source Current (A) 200 160 140 120 100 80 60 VGS =10V VGS =6.5V VGS =4.5V 40 20 0 0 0.1 0.2 0.3 0.4 VDS - Drain-to-Source Voltage (V) 180 160 140 120 100 80 60 TC = 125°C TC = 25°C TC = −55°C 40 20 0 0.5 VDS = 5V 0 1 G001 Figure 2. Saturation Characteristics TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 8 C − Capacitance (pF) VGS - Gate-to-Source Voltage (V) Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 6 4 10000 1000 100 2 0 10 20 30 40 50 60 Qg - Gate Charge (nC) 70 10 80 0 5 G001 Figure 4. Gate Charge 10 15 20 VDS - Drain-to-Source Voltage (V) 25 G001 Figure 5. Capacitance TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 1.9 4 RDS(on) - On-State Resistance (mΩ) ID = 250uA VGS(th) - Threshold Voltage (V) G001 100000 ID = 30A VDS =15V 0 5 Figure 3. Transfer Characteristics 10 1.7 1.5 1.3 1.1 0.9 0.7 0.5 0.3 −75 −25 25 75 125 TC - Case Temperature (ºC) Figure 6. Threshold Voltage vs. Temperature 4 2 3 4 VGS - Gate-to-Source Voltage (V) 175 TC = 25°C Id = 30A TC = 125ºC Id = 30A 3.5 3 2.5 2 1.5 1 0.5 0 0 G001 2 4 6 8 10 VGS - Gate-to- Source Voltage (V) 12 G001 Figure 7. On-State Resistance vs. Gate-to-Source Voltage Submit Documentation Feedback Copyright © 2012–2013, Texas Instruments Incorporated Product Folder Links: CSD16556Q5B CSD16556Q5B www.ti.com SLPS432B – NOVEMBER 2012 – REVISED JANUARY 2013 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 100 VGS = 4.5V VGS = 10V 1.8 ID =30A ISD − Source-to-Drain Current (A) Normalized On-State Resistance 2 1.6 1.4 1.2 1 0.8 0.6 −75 −25 25 75 125 TC - Case Temperature (ºC) 175 TC = 25°C TC = 125°C 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 VSD − Source-to-Drain Voltage (V) G001 Figure 8. Normalized On-State Resistance vs. Temperature G001 Figure 9. Typical Diode Forward Voltage TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 1000 10000 DC 10 ms 1 ms 100 us IAV - Peak Avalanche Current (A) IDS - Drain-to-Source Current (A) 1 1000 100 10 1 Single Pulse Typical RthetaJA = 100ºC/W(min Cu) 0.1 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) 50 TC = 25ºC TC = 125ºC 100 10 0.01 0.1 1 TAV - Time in Avalanche (mS) G001 Figure 10. Safety Operating Area Tc = 25° C 10 G001 Figure 11. Single Pulse Unclamped Inductive Switching TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING IDS - Drain- to- Source Current (A) 300.0 Silicon limited Package limited 250.0 200.0 150.0 100.0 50.0 0.0 −50 −25 0 25 50 75 100 125 TC - Case Temperature (ºC) 150 175 G001 Figure 12. Maximum Drain Current vs. Temperature Submit Documentation Feedback Copyright © 2012–2013, Texas Instruments Incorporated Product Folder Links: CSD16556Q5B 5 CSD16556Q5B SLPS432B – NOVEMBER 2012 – REVISED JANUARY 2013 www.ti.com MECHANICAL DATA Q5B Package Dimensions DIM MILLIMETERS MIN NOM MAX A 0.95 1.00 1.05 b 0.36 0.41 0.46 c 0.15 0.20 0.25 c1 0.15 0.20 0.25 c2 0.20 0.25 0.30 D1 4.90 5.00 5.10 D2 4.12 4.22 4.32 d 0.20 0.25 0.30 E 4.90 5.00 5.10 E1 5.90 6.00 6.10 E2 3.48 3.58 3.68 e L 0.46 0.56 0.66 θ 0° - - K 6 1.27 TYP 1.40 TYP Submit Documentation Feedback Copyright © 2012–2013, Texas Instruments Incorporated Product Folder Links: CSD16556Q5B CSD16556Q5B www.ti.com SLPS432B – NOVEMBER 2012 – REVISED JANUARY 2013 Recommended PCB Pattern For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through PCB Layout Techniques. Recommended Stencil Pattern Submit Documentation Feedback Copyright © 2012–2013, Texas Instruments Incorporated Product Folder Links: CSD16556Q5B 7 CSD16556Q5B SLPS432B – NOVEMBER 2012 – REVISED JANUARY 2013 www.ti.com K0 4.00 ±0.10 (See Note 1) 0.30 ±0.05 2.00 ±0.05 +0.10 –0.00 12.00 ±0.30 Ø 1.50 1.75 ±0.10 Q5B Tape and Reel Information 5.50 ±0.05 B0 R 0.30 MAX A0 8.00 ±0.10 Ø 1.50 MIN R 0.30 TYP A0 = 6.50 ±0.10 B0 = 5.30 ±0.10 K0 = 1.40 ±0.10 M0138-01 Notes: 1. 10-sprocket hole-pitch cumulative tolerance ±0.2 2. Camber not to exceed 1mm in 100mm, noncumulative over 250mm 3. Material: black static-dissipative polystyrene 4. All dimensions are in mm (unless otherwise specified) 5. A0 and B0 measured on a plane 0.3mm above the bottom of the pocket REVISION HISTORY Changes from Original (November 2012) to Revision A • Changed the device From Product Preview To: Production ................................................................................................. 1 Changes from Revision A (December 2012) to Revision B • 8 Page Page Changed gfs, Transconductance TYP value From: 2 S To: 191 S ....................................................................................... 2 Submit Documentation Feedback Copyright © 2012–2013, Texas Instruments Incorporated Product Folder Links: CSD16556Q5B PACKAGE OPTION ADDENDUM www.ti.com 8-Jan-2013 PACKAGING INFORMATION Orderable Device Status (1) CSD16556Q5B ACTIVE Package Type Package Pins Package Qty Drawing VSON DNK 8 2500 Eco Plan Lead/Ball Finish (2) Pb-Free (RoHS Exempt) CU SN MSL Peak Temp Samples (3) (Requires Login) Level-1-260C-UNLIM (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. 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Addendum-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 8-Jan-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device CSD16556Q5B Package Package Pins Type Drawing VSON DNK 8 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2500 330.0 12.8 Pack Materials-Page 1 6.5 B0 (mm) K0 (mm) P1 (mm) 5.3 1.4 8.0 W Pin1 (mm) Quadrant 12.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 8-Jan-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) CSD16556Q5B VSON DNK 8 2500 335.0 335.0 32.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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