CMT2N7002AG SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor High Density Cell Design for Low RDS(ON) is produced using high cell density, DMOS technology. Voltage Controlled Small Signal Switch These products have been designed to minimize Rugged and Reliable on-state resistance while provide rugged, reliable, and High Saturation Current Capability fast switching performance. It can be used in most Built-in G-S Protection Diode applications requiring up to 115mA DC and can deliver pulsed currents up to 800mA. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. PIN CONFIGURATION SYMBOL SOT-23 Top View 1 SOURCE DRAIN GATE 3 2 N-Channel MOSFET ORDERING INFORMATION Part Number CMT2N7002AG Package SOT-23 *Note: G : Suffix for Pb Free Product 2007/07/18 Rev. 1.0 Champion Microelectronic Corporation Page 1 CMT2N7002AG SMALL SIGNAL MOSFET ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 V Drain-Gate Voltage (RGS = 1.0MΩ) VDGR 60 V ID ±115 mA Drain to Current － Continuous IDM ±800 Gate-to-Source Voltage － Pulsed VGS ±20 Total Power Dissipation PD 225 mW 1.8 mW/℃ EAS 2.5 mJ Operating and Storage Temperature Range TJ, TSTG -55 to 150 ℃ Thermal Resistance － Junction to Ambient θJA 417 ℃/W Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL 300 ℃ Derate above 25℃ Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃ V (VDD = 50V, VGS = 10V, IAS = 0.5A, L = 20mH, RG = 25Ω) ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TJ = 25℃.) CMT2N7002AG Characteristic Drain-Source Breakdown Voltage Symbol Min V(BR)DSS 60 Typ Max Units V (VGS = 0 V, ID = 10 μA) IDSS Drain-Source Leakage Current (VDS = 60 V, VGS = 0 V) (VDS = 60 V, VGS = 0 V, TJ = 125℃) Gate-Source Leakage Current-Forward (Vgsf = 20 V) Gate-Source Leakage Current-Reverse (Vgsf = -20 V) Gate Threshold Voltage * IGSS IGSS VGS(th) 1.0 Id(on) 500 1.0 μA 0.5 mA 10 uA -10 uA 2.5 V (VDS = VGS, ID = 250 μA) On-State Drain Current (VDS ≧ 2.0 VDS(on), VGS = 10V) mA Ω RDS(on) Static Drain-Source On-Resistance * (VGS = 10 V, ID = 0.5A) 7.5 (VGS = 10 V, ID = 0.5A, TC = 125℃) 13.5 (VGS = 5.0 V, ID = 50mA) 7.5 (VGS = 5.0 V, ID = 50mA, TC = 125℃) 13.5 Drain-Source On-Voltage * V VDS(on) (VGS = 10 V, ID = 0.5A) 3.75 0.375 (VGS = 5.0 V, ID = 50mA) Forward Transconductance (VDS ≧ 2.0 VDS(on), ID = 200mA) * gFS Input Capacitance Ciss Output Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Reverse Transfer Capacitance 80 mmhos 50 Coss 25 pF pF Crss 5.0 pF 20 ns ns Turn-On Delay Time (VDD = 25 V, ID = 500 mA, td(on) Turn-Off Delay Time Vgen = 10 V, RG = 25Ω, RL = 50Ω) * td(off) 40 VSD -1.5 V IS -115 mA ISM -800 mA Diode Forward On-Voltage (IS = 115 mA, VGS = 0V) Source Current Continuous (Body Diode) Source Current Pulsed * Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2% 2007/07/18 Rev. 1.0 Champion Microelectronic Corporation Page 2 CMT2N7002AG SMALL SIGNAL MOSFET TYPICAL ELECTRICAL CHARACTERISTICS Figure 5. Capacitance 2007/07/18 Rev. 1.0 Champion Microelectronic Corporation Page 3 CMT2N7002AG SMALL SIGNAL MOSFET PACKAGE DIMENSION SOT-23 D b1 3 With Plating E E1 c c1 A A1 A2 b b Base Metal b1 c Section B-B c1 D E 1 2 e e1 E1 b L L1 e θ1 e1 θ θ1 θ A2 A θ2 A1 θ2 2007/07/18 Rev. 1.0 See Section B-B L L1 Champion Microelectronic Corporation Page 4 CMT2N7002AG SMALL SIGNAL MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 7F-6, No.32, Sec. 1, Chenggong Rd., Nangang District, Taipei City 115, Taiwan 2007/07/18 Rev. 1.0 T E L : +886-2-2788 0558 F A X : +886-2-2788 2985 Champion Microelectronic Corporation Page 5