CMT2N7002AG

CMT2N7002AG
SMALL SIGNAL MOSFET
GENERAL DESCRIPTION
FEATURES
This N-Channel enhancement mode field effect transistor
High Density Cell Design for Low RDS(ON)
is produced using high cell density, DMOS technology.
Voltage Controlled Small Signal Switch
These products have been designed to minimize
Rugged and Reliable
on-state resistance while provide rugged, reliable, and
High Saturation Current Capability
fast switching performance. It can be used in most
Built-in G-S Protection Diode
applications requiring up to 115mA DC and can deliver
pulsed currents up to 800mA. This product is particularly
suited for low voltage, low current applications such as
small servo motor control, power MOSFET gate drivers,
and other switching applications.
PIN CONFIGURATION
SYMBOL
SOT-23
Top View
1
SOURCE
DRAIN
GATE
3
2
N-Channel MOSFET
ORDERING INFORMATION
Part Number
CMT2N7002AG
Package
SOT-23
*Note: G : Suffix for Pb Free Product
2007/07/18 Rev. 1.0
Champion Microelectronic Corporation
Page 1
CMT2N7002AG
SMALL SIGNAL MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain Source Voltage
VDSS
60
V
Drain-Gate Voltage (RGS = 1.0MΩ)
VDGR
60
V
ID
±115
mA
Drain to Current － Continuous
IDM
±800
Gate-to-Source Voltage
－ Pulsed
VGS
±20
Total Power Dissipation
PD
225
mW
1.8
mW/℃
EAS
2.5
mJ
Operating and Storage Temperature Range
TJ, TSTG
-55 to 150
℃
Thermal Resistance － Junction to Ambient
θJA
417
℃/W
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
TL
300
℃
Derate above 25℃
Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃
V
(VDD = 50V, VGS = 10V, IAS = 0.5A, L = 20mH, RG = 25Ω)
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TJ = 25℃.)
CMT2N7002AG
Characteristic
Drain-Source Breakdown Voltage
Symbol
Min
V(BR)DSS
60
Typ
Max
Units
V
(VGS = 0 V, ID = 10 μA)
IDSS
Drain-Source Leakage Current
(VDS = 60 V, VGS = 0 V)
(VDS = 60 V, VGS = 0 V, TJ = 125℃)
Gate-Source Leakage Current-Forward (Vgsf = 20 V)
Gate-Source Leakage Current-Reverse (Vgsf = -20 V)
Gate Threshold Voltage *
IGSS
IGSS
VGS(th)
1.0
Id(on)
500
1.0
μA
0.5
mA
10
uA
-10
uA
2.5
V
(VDS = VGS, ID = 250 μA)
On-State Drain Current (VDS ≧ 2.0 VDS(on), VGS = 10V)
mA
Ω
RDS(on)
Static Drain-Source On-Resistance *
(VGS = 10 V, ID = 0.5A)
7.5
(VGS = 10 V, ID = 0.5A, TC = 125℃)
13.5
(VGS = 5.0 V, ID = 50mA)
7.5
(VGS = 5.0 V, ID = 50mA, TC = 125℃)
13.5
Drain-Source On-Voltage *
V
VDS(on)
(VGS = 10 V, ID = 0.5A)
3.75
0.375
(VGS = 5.0 V, ID = 50mA)
Forward Transconductance (VDS ≧ 2.0 VDS(on), ID = 200mA) *
gFS
Input Capacitance
Ciss
Output Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Reverse Transfer Capacitance
80
mmhos
50
Coss
25
pF
pF
Crss
5.0
pF
20
ns
ns
Turn-On Delay Time
(VDD = 25 V, ID = 500 mA,
td(on)
Turn-Off Delay Time
Vgen = 10 V, RG = 25Ω, RL = 50Ω) *
td(off)
40
VSD
-1.5
V
IS
-115
mA
ISM
-800
mA
Diode Forward On-Voltage (IS = 115 mA, VGS = 0V)
Source Current Continuous (Body Diode)
Source Current Pulsed
* Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2%
2007/07/18 Rev. 1.0
Champion Microelectronic Corporation
Page 2
CMT2N7002AG
SMALL SIGNAL MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 5. Capacitance
2007/07/18 Rev. 1.0
Champion Microelectronic Corporation
Page 3
CMT2N7002AG
SMALL SIGNAL MOSFET
PACKAGE DIMENSION
SOT-23
D
b1
3
With Plating
E
E1
c
c1
A
A1
A2
b
b
Base Metal
b1
c
Section
B-B
c1
D
E
1
2
e
e1
E1
b
L
L1
e
θ1
e1
θ
θ1
θ
A2
A
θ2
A1
θ2
2007/07/18 Rev. 1.0
See
Section
B-B
L
L1
Champion Microelectronic Corporation
Page 4
CMT2N7002AG
SMALL SIGNAL MOSFET
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
Sales & Marketing
5F, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
T E L : +886-3-567 9979
F A X : +886-3-567 9909
7F-6, No.32, Sec. 1, Chenggong Rd., Nangang
District, Taipei City 115, Taiwan
2007/07/18 Rev. 1.0
T E L : +886-2-2788 0558
F A X : +886-2-2788 2985
Champion Microelectronic Corporation
Page 5