CMT2N7002 Formosa MS SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is High Density Cell Design for Low RDS(ON) produced using high cell density, DMOS technology. These Voltage Controlled Small Signal Switch products have been designed to minimize on-state Rugged and Reliable resistance while provide rugged, reliable, and fast switching High Saturation Current Capability performance. It can be used in most applications requiring up to 115mA DC and can deliver pulsed currents up to 800mA. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. PIN CONFIGURATION SYMBOL SOT-23 D Top View 1 G SOURCE DRAIN GATE 3 S 2 N-Channel MOSFET ORDERING INFORMATION Part Number Package CMT2N7002 SOT-23 CMT2N7002G* *Note: G : Suffix for Pb Free Product SOT-23 ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 V Drain-Gate Voltage (RGS = 1.0MΩ) VDGR 60 V ID ±115 mA Drain to Current － Continuous － Pulsed IDM ±800 VGS ±20 VGSM ±40 V PD 225 mW 1.8 mW/℃ EAS 9.6 mJ Operating and Storage Temperature Range TJ, TSTG -55 to 150 ℃ Thermal Resistance － Junction to Ambient θJA 417 ℃/W Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL 300 ℃ Gate-to-Source Voltage － Continue － Non-repetitive Total Power Dissipation Derate above 25℃ Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃ V (VDD = 50V, VGS = 10V, IAS = 0.8A, L = 30mH, RG = 25Ω) CMT2N7002 Formosa MS SMALL SIGNAL MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT2N7002 Characteristic Drain-Source Breakdown Voltage Symbol Min V(BR)DSS 60 Typ Max Units V (VGS = 0 V, ID = 10 μA) Drain-Source Leakage Current IDSS (VDS = 60 V, VGS = 0 V) 1.0 μA (VDS = 60 V, VGS = 0 V, TJ = 125℃) 0.5 mA Gate-Source Leakage Current-Forward (Vgsf = 20 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsf = -20 V) IGSSF -100 nA 2.5 V Gate Threshold Voltage * VGS(th) 1.0 Id(on) 500 (VDS = VGS, ID = 250 μA) On-State Drain Current (VDS ≧ 2.0 VDS(on), VGS = 10V) Static Drain-Source On-Resistance * mA RDS(on) Ω (VGS = 10 V, ID = 0.5A) 7.5 (VGS = 10 V, ID = 0.5A, TC = 125℃) 13.5 (VGS = 5.0 V, ID = 50mA) 7.5 (VGS = 5.0 V, ID = 50mA, TC = 125℃) 13.5 Drain-Source On-Voltage * VDS(on) V (VGS = 10 V, ID = 0.5A) 3.75 (VGS = 5.0 V, ID = 50mA) 0.375 Forward Transconductance (VDS ≧ 2.0 VDS(on), ID = 200mA) * gFS Input Capacitance Ciss 50 Coss 25 pF pF Output Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) 80 mmhos Crss 5.0 pF Turn-On Delay Time (VDD = 25 V, ID = 500 mA, td(on) 20 Turn-Off Delay Time Vgen = 10 V, RG = 25Ω, RL = 50Ω) * td(off) 40 ns ns VSD -1.5 V Reverse Transfer Capacitance Diode Forward On-Voltage (IS = 115 mA, VGS = 0V) Source Current Continuous (Body Diode) IS -115 mA Source Current Pulsed ISM -800 mA * Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2% CMT2N7002 Formosa MS SMALL SIGNAL MOSFET TYPICAL ELECTRICAL CHARACTERISTICS Figure 5. Capacitance CMT2N7002 Formosa MS SMALL SIGNAL MOSFET PACKAGE DIMENSION SOT-23 D b1 3 With Plating E E1 c c1 A A1 A2 b b Base Metal b1 c Section B-B c1 D E 1 2 e e1 E1 b L L1 e θ1 e1 θ θ1 θ A2 A θ2 A1 θ2 See Section B-B L L1