CMT9435G P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION FEATURES VDS=-30V , ID=-5.3A Advanced trench process technology RDS(ON) , VGS@-10V , IDS@ -5.3A = 60mΩ High Density Cell Design For Ultra Low On-Resistance RDS(ON) , [email protected] , IDS@ -4.2A = 90mΩ Fully Characterized Avalanche Voltage and Current Improved Shoot –Through FOM APPLICATIONS Power Management in Notebook Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter PIN CONFIGURATION SYMBOL 8-PIN SOP (S08) Top View P-Channel MOSFET ORDERING INFORMATION Part Number CMT9435G Package SOP-8 *Note: G : Suffix for Pb Free Product 2007/02/05 Rev1.0 Champion Microelectronic Corporation Page 1 CMT9435G P-CHANNEL ENHANCEMENT MODE MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Rating Symbol Value Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V ID -5.3 A IDM -20 A Continuous Drain Current Pulsed Drain Current TA=25℃ Maximum Power Dissipation 2.5 PD W TA=75℃ Operating Junction Temperature Range TJ -55 to150 ℃ Storage Temperature Range TSTG -55 to 150 ℃ Junction-to-Ambient Thermal Resistance (PCB mount) RqJA 50 ℃/W Junction-to-Case Thermal Resistance RqJC 30 ℃/W Note : 1. Repetitive Rating : Pulse width limited by the Maximum junction temperation 2. 1-in2 2oz Cu PCB board 3. Guaranteed by design ; not subject to production testing 2007/02/05 Rev1.0 Champion Microelectronic Corporation Page 2 CMT9435G P-CHANNEL ENHANCEMENT MODE MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units Static BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V RDS(ON) Drain-Source On-State Resistance VGS=-10V, ID=-5.3A - 50 60 mΩ RDS(ON) Drain-Source On-State Resistance VGS=-4.5V, ID=-4.2A - 75 90 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1.0 -1.5 -3.0 V gfs Forward Transconductance VDS=10V, ID=6A 4 7 - S IDSS Zero Gate Voltage Drain Current VDS=-24V, VGS=0V - - -1 uA IGSS Gate-Body Leakage VGS=±20V , VDS=0V - - ±100 nA Qg Total Gate Charge ID=-5.3A - 9.52 - nC Qgs Gate-Source Charge VDS=-15V - 3.43 - nC Qgd Gate-Drain Charge VGS=-10V - 1.71 - nC td(on) Turn-On Delay Time VDD=-15V - 10.8 - ns tr Turn-On Rise Time ID=-1A - 2.33 - ns td(off) Turn-Off Delay Time RG=6Ω,VGEN=-10V - 23.53 - ns tf Turn-Off Fall Time RL=15Ω - 3.87 - ns Ciss Input Capacitance VGS=0V - 551.57 - pF Coss Output Capacitance VDS=-15V - 90.96 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 60.79 - pF - - -1.9 A - - -1.3 V Dynamic Source-Drain Diode Is Max. Diode Forward Current VSD Diode Forward Voltage IS=-5.3A, VGS=0V, Notes: 1.Pulse test : Pulse width <300us , duty cycle <2%. 2007/02/05 Rev1.0 Champion Microelectronic Corporation Page 3 CMT9435G P-CHANNEL ENHANCEMENT MODE MOSFET TYPICAL CHARACTERISTICS 2007/02/05 Rev1.0 Champion Microelectronic Corporation Page 4 CMT9435G P-CHANNEL ENHANCEMENT MODE MOSFET 2007/02/05 Rev1.0 Champion Microelectronic Corporation Page 5 CMT9435G P-CHANNEL ENHANCEMENT MODE MOSFET PACKAGE DIMENSION 8-PIN SOP (S08) 2007/02/05 Rev1.0 Champion Microelectronic Corporation Page 6 CMT9435G P-CHANNEL ENHANCEMENT MODE MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan 7F-6, No.32, Sec. 1, Chenggong Rd., Nangang District, Taipei City 115, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 T E L : +886-2-2788 0558 F A X : +886-2-2788 2985 2007/02/05 Rev1.0 Champion Microelectronic Corporation Page 7