PFB6000 N-CHANNEL TRENCH MOSFET APPLICATION FEATURES DC motor control Low ON Resistance UPS Low Gate Charge Class D Amplifier Peak Current vs Pulse Width Curve Inductive Switching Curves VDSS RDS(ON) Typ. ID 60V 15.8mΩ 60A PIN CONFIGURATION SYMBOL TO-220 D SOURCE DRAIN GATE Front View G S 1 2 N-Channel MOSFET 3 ABSOLUTE MAXIMUM RATINGS Rating Drain to Source Voltage (Note 1) Drain to Current － Continuous Tc = 25℃, VGS@10V － Continuous Tc = 100℃, VGS@10V － Pulsed Tc = 25℃, VGS@10V (Note 2) Symbol Value Unit VDSS 60 V A ID 60 ID 43 IDM 241 Gate-to-Source Voltage － Continue VGS ±20 Total Power Dissipation PD 150 W 1.0 W/℃ dv/dt 4.5 V/ns TJ, TSTG -55 to 175 ℃ EAS 500 mJ Derating Factor above 25℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Single Pulse Avalanche Energy L=144μH,ID=40 Amps Maximum Lead Temperature for Soldering Purposes Maximum Package Body for 10 seconds Pulsed Avalanche Rating V TL 300 ℃ TPKG 260 ℃ IAS 60 A THERMAL RESISTANCE Symbol RθJC Parameter Junction-to-case RθJA Junction-to-ambient 2004/03/04 Min Typ Max 1.0 Units ℃/W 62 ℃/W Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +175℃ 1 cubic foot chamber, free air Page 1 PFB6000 N-CHANNEL TRENCH MOSFET ORDERING INFORMATION Part Number Package PFB6000 TO-220 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMP60N03LD13 Characteristic Symbol Min VDSS 60 Typ Max Units OFF Characteristics Drain-to-Source Breakdown Voltage V (VGS = 0 V, ID = 250 μA) Breakdown Voltage Temperature Coefficient ΔVDSS/∆TJ 0.069 mV/℃ (Reference to 25℃, ID = 250 μA) Drain-to-Source Leakage Current IDSS µA (VDS = 60 V, VGS = 0 V, TJ = 25℃) 25 (VDS = 48 V, VGS = 0 V, TJ = 150℃) 250 Gate-to-Source Forward Leakage IGSS 100 nA IGSS -100 nA 2.0 3.0 V 15.8 18 (VGS = 20 V) Gate-to-Source Reverse Leakage (VGS = -20 V) ON Characteristics VGS(th) Gate Threshold Voltage 1.0 (VDS = VGS, ID = 250 μA) Static Drain-to-Source On-Resistance RDS(on) (Note 4) (VGS = 10 V, ID = 60A) Forward Transconductance (VDS = 15 V, ID = 60A) (Note 4) mΩ gFS 36 S Ciss 1430 Coss 420 pF pF Crss 88 pF (VDS = 30 V, ID = 60 A, Qg 37.7 VGS = 10 V) (Note 5) Qgs 8.4 nC nC Qgd 9.8 nC td(on) 12.1 trise 64 ns ns td(off) 69 ns tfall 39 ns Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (VGS = 10 V) Gate-to-Source Charge (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Gate-to-Drain (“Miller”) Charge Resistive Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time (VDD = 30 V, ID = 60 A, VGS = 10 V, RG = 9.1Ω) (Note 5) Source-Drain Diode Characteristics Continuous Source Current (Body Diode) IS 60 A A Integral pn-diode in MOSFET Pulse Source Current (Body Diode) ISM 241 Diode Forward On-Voltage (IS = 60 A, VGS = 0 V) VSD 1.5 Reverse Recovery Time (IF = 60A, VGS = 0 V, trr 55 ns di/dt = 100A/µs) Qrr 110 nC Reverse Recovery Charge 2004/03/04 V Page 2 PFB6000 N-CHANNEL TRENCH MOSFET Note 1: TJ = +25℃ to +175℃ Note 2: Repetitive rating; pulse width limited by maximum junction temperature. Note 3: ISD = 60A, di/dt <100A/µs, VDD < BVDSS, TJ = +175℃ Note 4: Pulse width < 250µs; duty cycle<2% Note 5: Essentially independent of operating temerpature. PACKAGE DIMENSION TO-220 A D c1 PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E1 E F φ A A1 L1 b b1 c c1 D L E E1 e e1 F L b1 e e1 Front View b A1 c Side View L1 φ