CHENMKO ENTERPRISE CO.,LTD 2SA1036KPT SURFACE MOUNT Medium Power PNP Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. (SOT-23) * Low saturation voltage V CE(sat)=-0.4V(max.)(I C=-100mA) * Low cob. Cob=7.0pF(Typ.) .055 (1.40) .047 (1.20) * HFE(P):ST * HFE(Q):TT * HFE(R):2F(3)C .019 (0.50) (2) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .045 (1.15) .033 (0.85) CIRCUIT (1)B (3) .002 (0.05) MARKING .066 (1.70) .119 (3.04) * PNP Silicon Transistor * Epitaxial planner type .110 (2.80) .082 (2.10) (1) CONSTRUCTION .007 (0.177) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. .018 (0.30) .041 (1.05) .033 (0.85) SOT-23 SOT-23 Dimensions in inches and (millimeters) (2)E MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. MAX. UNITS Collector - Base Voltage RATINGS Open Emitter CONDITION VCBO - -40 Volts Collector - Emitter Voltage Open Base VCEO - -32 Volts Emitter - Base Voltage Open Collector VEBO - -5 Volts IC - -500 mAmps Peak Collector Current ICM - -500 mAmps Peak Base Current IBM - -10 mAmps PTOT - 300 mW TSTG -55 +150 o C C C Collector Current DC Total Power Dissipation TA ≤ 25OC; Note 1 Storage Temperature Junction Temperature Operating Ambient Temperature TJ - +150 o TAMB -55 +150 o Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2002-10 RATING CHARACTERISTICS ( 2SA1036KPT ) ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. TYPE MAX. UNITS Collector Cut-off Current PARAMETERS IE=0; VCB=-20V CONDITION ICBO - - -1.0 uA Emitter Cut-off Current IC=0; VEB=-4V ICEO - - -1.0 uA DC Current Gain VCE=-3V; Note 1 IC=-10mA; Note 2 hFE 82 - 390 Collector-Emitter Saturation Voltage IC=-100mA; IB=-10mA VCEsat - - -0.4 Volts Base-Emitter Saturatio Voltage IC=-100mA; IB=-10mA VBEsat - - -1.1 mVolts Output Collector Capacitance IE=ie=0; VCB=-10V; f=1MHz Cob - 7 - pF Transition Frequency IC=2mA; VCE=-10V; f=100MHz fT - 200 - MHz Note : 1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02. 2. hFE: Classification P: 82 to 180, Q: 120 to 270, R: 180 to 390 RATING CHARACTERISTIC CURVES ( 2SA1036KPT ) VCE=-3V COLLECTOR CURRENT : IC(mA) -200 -100 Ta=100OC -50 -20 25OC -10 - 55OC -5 -2 -1 -0.5 Grounded emitter output characteristics (1) -80 -0.7mA -0.6mA -60 -0.5mA -0.4mA -40 -0.3mA -0.2mA -20 -0.10mA 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 BASE TO EMITTER VOLTAGE : VBE(V) 0 0 -1 -2 -3 IB=0A -4 Grounded emitter output characteristics (2) -500 A -0.9m -0.8mA Ta=25OC -1mA -0.2 -0.1 Fig.3 -5 COLLECTOR TO EMITTER VOLTAGE : VCE(V) COLLECTOR CURRENT : IC(mA) -100 -1000 -500 Fig.2 Grounded emitter propagation characteristics COLLECTOR CURRENT : IC(mA) Fig.1 Ta=25OC -5.0mA -4.5mA -4.0mA -3.5mA -3.0mA -2.5mA -400 -300 -2.0mA -200 -1.5mA -1.0mA -100 0 -0 -0.5mA IB=0A -5 -10 COLLECTOR TO EMITTER VOLTAGE : VCE(V) RATING CHARACTERISTIC CURVES ( 2SA1036KPT ) -0.2 lC/lB=50 -0.1 20 -0.05 10 -0.02 -0.5 -1 -2 -5 -10 -50 -100 -500 DC CURRENT GAIN : hFE -0.1 O Ta=100 C 25OC -55OC -0.05 -0.02 -0.5 -1 -2 -5 -10 -50 -100 50OC 50 20 -0.5 -1 -5 -10 -50 -100 COLLECTOR CURRENT : IC(mA) -1000 200 100 50 10 -0.1 -500 Fig.9 500 200 100 50 0.5 1 2 5 10 20 EMITTER CURRENT : IE(mA) -0.5 -1.0 -5 -10 -50 -100 -1000 COLLECTOR CURRENT : IC(mA) Ta=25OC VCE=-5V 1000 O 25 C VCE=-5V -3V -1V 20 Fig.8 Gain bandwidth product vs. emitter current O Ta=100 C 10 -0.1 -0.2 Fig.7 DC current gain vs. collector current 500 100 -0.5 COLLECTOR CURRENT : IC(mA) VCE=-3V Ta=25OC 500 COLLECTOR CURRENT : IC(mA) 1000 200 1000 lC/lB=10 DC CURRENT GAIN : hFE -0.5 -1 Fig.6 DC current gain vs. collector current 50 COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib (pF) Ta=25OC COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) -1 Fig.5 Collector-emitter saturation voltage vs. collector current TRANSITION FREQUENCY : fT(MHz) COLLECTOR SATURATION VOLTAGE : V-CE(sat)(V) Fig.4 Collector-emitter saturation voltage vs. collector current 100 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Ta=25OC f=1MHz IE=0A IC=0A 50 Cib 20 Co 10 b 5 2 -0.5 -1 -2 -5 -10 -20 -50 COLLECTOR TO BASE VOLTAGE : VCB(V) EMITTER TO BASE VOLTAGE : VEB(V)