CHENMKO ENTERPRISE CO.,LTD CHEMZ1PT SURFACE MOUNT Dual Silicon Transistor VOLTAGE 50 Volts CURRENT 150 mAmpere APPLICATION * Small Signal Amplifier . FEATURE * Small surface mounting type. (SOT-563) * Low saturation voltage VCE(sat)=0.5V(max.)(IC=50mA) * Low cob. Cob=4.0pF(Typ.) SOT-563 * PC= 150mW (Total),120mW per element must not be exceeded. * High saturation current capability. (1) (5) * Both the 2SC2412K & 2SA1037K in one package. 0.50 0.9~1.1 * NPN / PNP Silicon Transistor 1.5~1.7 0.50 0.15~0.3 (4) (3) MARKING 1.1~1.3 * Z1 0.5~0.6 0.09~0.18 CIRCUIT 3 1 4 6 1.5~1.7 SOT-563 Dimensions in millimeters 2SC2412K LIMITING VALUES MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. MAX. UNITS Collector - Base Voltage RATINGS Open Emitter CONDITION VCBO - 60 Volts Collector - Emitter Voltage Open Base VCEO - 50 Volts Emitter - Base Voltage Open Collector VEBO - 7 Volts IC - 150 mAmps Peak Collector Current ICM - 150 mAmps Peak Base Current IBM - 15 mAmps PTOT - 150 mW TSTG -55 +150 o C C C Collector Current DC Total Power Dissipation TA ≤ 25OC; Note 1 Storage Temperature Junction Temperature Operating Ambient Temperature TJ - +150 o TAMB -55 +150 o Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2004-07 2SA1037K LIMITING VALUES MAXIMUM RATINGES ( At TA = 25 C unless otherwise noted ) SYMBOL MIN. MAX. UNITS Collector - Base Voltage RATINGS Open Emitter CONDITION VCBO - -60 Volts Collector - Emitter Voltage Open Base VCEO - -50 Volts Emitter - Base Voltage Open Collector VEBO - -6 Volts IC - -150 mAmps ICM - -150 mAmps Collector Current DC Peak Collector Current Peak Base Current Total Power Dissipation TA ≤ 25OC; Note 1 Storage Temperature Junction Temperature Operating Ambient Temperature IBM - -15 mAmps PTOT - 150 mW TSTG -55 +150 o C C C TJ - +150 o TAMB -55 +150 o Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2SC2412K CHARACTERISTICS ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. TYPE MAX. UNITS Collector-base breakdown voltage PARAMETERS IC=50uA CONDITION BVCBO 60 - - Volts Collector-emitter breakdown voltage IC=1mA BVCEO 50 - - Volts Emitter-base breakdown voltage IE=50uA BVEBO 7 - - Volts Collector Cut-off Current IE=0; VCB=60V ICBO - - 0.1 uA Emitter Cut-off Current IC=0; VEB=7V ICEO - - 0.1 uA DC Current Gain VCE=6V IC=1mA hFE 120 - 560 Collector-Emitter Saturation Voltage IC=50mA; IB=5mA VCEsat - - 0.4 Volts Output Collector Capacitance IE=ie=0; VCB=12V; f=1MHz Cob - 2 3.5 pF Transition Frequency IC=2mA; VCE=12V; f=100MHz fT - 180 - MHz TYPE MAX. UNITS - Volts 2SA1037K CHARACTERISTICS ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. Collector-base breakdown voltage PARAMETERS IC=-50uA CONDITION BVCBO -60 Collector-emitter breakdown voltage IC=-1mA BVCEO -50 - - Volts Emitter-base breakdown voltage IE=-50uA BVEBO -6 - - Volts Collector Cut-off Current IE=0; VCB=-60V ICBO - - -0.1 uA Emitter Cut-off Current IC=0; VEB=-6V IEBO - - -0.1 uA DC Current Gain VCE=-6V IC=-1mA hFE 120 - 560 Collector-Emitter Saturation Voltage IC=-50mA; IB=-5mA VCEsat - - -0.5 Volts Output Collector Capacitance IE=ie=0; VCB=-12V; f=1MHz Cob - 4 5.0 pF Transition Frequency IE=2mA; VCE=-12V; f=100MHz fT - 140 - MHz - RATING CHARACTERISTIC CURVES ( CHEMZ1PT ) 2SC2412K Typical Electrical Characteristics 100 COLLECTOR CURRENT : IC (mA) VCE=6V 20 10 2 1 25 ΟC 55 OC Ta=100 OC 5 0.5 0.2 mA 0.45 A 0.40m A m 35 0. 0.30mA 0.25mA 60 0.20mA 0.15mA 40 0.10mA 20 0 VCE=5V Ta=100OC 25OC 200 -55OC 100 50 20 10 0.2 0.5 1 2 5 10 20 50 100 200 Ta=25 IC/IB=50 20 10 0.1 0.05 0.02 0.01 0.2 2 5 10 20 50 EMITTER CURRENT : IE (mA) 100 BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps) 100 1 0.5 1 2 5 10 20 50 100 100 50 20 10 0.2 0.5 1 2 5 EMITTER CURRENT : IE (mA) 2 5 10 20 50 100 200 0.5 IC/IB=10 0.2 0.1 Ta=100OC 25OC -55OC 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Ta=25OC f=32MHZ VCB=6V 200 0.5 1 COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current Fig.8 Base-collector time constant vs. emitter current 200 50 10 0.2 2.0 COLLECTOR CURRENT : IC (mA) Ta=25O VCE=6V 100 IB=0A 1.6 VCE=5V 3V 1V 200 20 0.2 Fig.7 Gain bandwidth product vs. emitter current 50 0.5 1.2 0.5 COLLECTOR CURRENT : IC (mA) 500 0.8 Ta=25OC 0.05mA Fig. 5 Collector-emitter saturation voltage vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 500 0.4 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.4 DC current gain vs. collector current (2) TRANSITION FREQUENCY : fT (MHz) 0.50mA 80 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) DC CURRENT GAIN : hFE Ta=25OC 0 0.1 0 Fig.3 DC current gain vs. collector current (1) Grounded emitter output characteristics DC CURRENT GAIN : hFE 50 COLLECTOR CURRENT : IC (mA) Fig.2 Grounded emitter propagation characteristics COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.1 10 RATING CHARACTERISTIC CURVES ( CHEMZ1PT ) 2SA1037K Typical Electrical Characteristics −5 −2 −1 −0.5 −0.2 −0.1 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 -1.8 −24.5 DC CURRENT GAIN : hFE −40˚C 100 50 −50 −100 COLLECTOR CURRENT : IC (mA) −17.5 TRANSITION FREQUENCY : fT (MHz) Ta=25˚C VCE=−12V 500 200 100 50 0.5 1 2 5 10 20 EMITTER CURRENT : IE (mA) −14.0 −4 −10.5 −7.0 −2 −0.4 −0.8 −1.2 −1.6 50 −1 IB=0 −2.0 Ta=25˚C −0.5 −0.2 IC/IB=50 −0.1 20 10 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 100 VCE=−5V −3V −1V Ta=25˚C 200 100 50 −3.5µA COLLECTOR CURRENT : IC (mA) Fig.7 Gain bandwidth product vs. emitter current 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=−6V −5 −10 −20 −21.0 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current Fig. 5 Collector-emitter saturation voltage vs. collector current 25˚C −2 −28.0 BASE TO EMITTER VOLTAGE : VBE (V) 500 −0.2 −0.5 −1 500 −31.5 −6 0 Fig.4 DC current gain vs. collector current (2) 200 −35.0 Ta=25˚C −8 BASE TO EMITTER VOLTAGE : VBE (V) Ta=100˚C Fig.3 DC current gain vs. collector current (1) Grounded emitter output characteristics DC CURRENT GAIN : hFE −10 −10 VCE=−6V Ta=100˚C 25˚C −40˚C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) −50 −20 Fig.2 Grounded emitter propagation characteristics COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.1 −50 −100 −1 lC/lB=10 −0.5 −0.2 −0.1 Ta=100˚C 25˚C −40˚C −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA)