CHENMKO ENTERPRISE CO.,LTD 2SB1188PT SURFACE MOUNT PNP Medium Power Transistor VOLTAGE 32 Volts CURRENT 2 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE SC-62/SOT-89 * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=-0.5V(typ.)(IC/IB=-2A/-0.2A) CONSTRUCTION 1.6MAX. 4.6MAX. 0.4+0.05 2.5+0.1 0.8MIN. MARKING * HFE(P):P1188 * HFE(Q):Q1188 * HFE(R):R1188 +0.08 0.45-0.05 +0.08 0.40-0.05 +0.08 0.40-0.05 1.50+0.1 1.50+0.1 1 1 Base 2 3 2 Collector ( Heat Sink ) C (2) CIRCUIT 4.6MAX. 1.7MAX. * PNP Switching Transistor 3 Emitter (1) B E (3) SC-62/SOT-89 Dimensions in millimeters MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. MAX. UNITS Collector - Base Voltage RATINGS Open Emitter CONDITION VCBO - -40 Volts Collector - Emitter Voltage Open Base VCEO - -32 Volts Emitter - Base Voltage Open Collector VEBO - -5 Volts IC - -2 Amps Amps Collector Current DC Peak Collector Current Note 1 ICM - -3 Total Power Dissipation Note 2 PTOT - 2 Storage Temperature Junction Temperature Note 1. Single pulse, Pw=100mS 2. When mounted on a 40*40*0.7 mm ceramic board TSTG TJ -55 - W +150 o C +150 o C 2007-04 RATING CHARACTERISTIC CURVES ( 2SB1188PT ) CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector-Base Breakdown Voltage CONDITION IC=-50uA SYMBOL MIN. TYPE MAX. UNITS BVCBO -40 - - Volts Collector-Emitter Breakdown Voltage IC=-1.0mA BVCEO -32 - - Volts Emitter-Base Breakdown Voltage IE=-50uA BVECO -5 - - Volts Collector Cut-off Current IE=0; VCB=-20V ICBO - - -1.0 uA Emitter Cut-off Current IC=0; VEB=-4V IEBO - - -1.0 uA DC Current Gain VCE=-3V; Note 3 IC=-0.5A hFE 82 - 390 Collector-Emitter Saturation Voltage IC=-2A; IB=-0.2A; Note 3 VCEsat - -0.5 -0.8 Volts Output Capacitance IE=ie=0; VCB=-10V; f=1MHz CC - 50 - pF Transition Frequency IE=-0.5A; VCE=-5.0V; f=100MHz fT - 100 - MHz Note : 3. Measured ueing pulse current 4. hFE Classification P: 82 to 180, Q: 120 to 270, R: 180 to 390 RATING CHARACTERISTIC CURVES ( 2SB1188PT ) Typical Electrical Characteristics Figure 2. DC Cueewnt Gain vs Collector Current Figure 1. Grounded Emitter Propagation Characteristics -3000 600 VCE=-3V VCE=-3V hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) -1000 Ta=100°C -100 Ta=-40°C -10 Ta=25°C T a =-25°C 100 Ta=25°C -1 0 -0.4 -0.8 -1.2 -1.6 V BE , BASE TO EMITTER VOLTAGE (V) -2.0 -2.2 -600 IC / IB=10 -100 Ta=-40°C Ta=100°C Ta=25°C -10 -3 -10 -100 IC, COLLECTOR CURRENT (mA) 20 -3 -10 -100 IC, COLLECTOR CURRENT (mA) Figure 3. Collector-Emitter Saturation Voltage vs Collector Current VCE(sat), COLLECTOR SATURATION VOLTAGE (mV) Ta=100°C -1000 -3000 -1000 -3000