CHENMKO ENTERPRISE CO.,LTD CHT5113PPT SMALL FLAT NPN Epitaxial Transistor VOLTAGE 60 Volts CURRENT 6 Amperes APPLICATION * High current amplifier. FEATURE * Small flat package. ( DPAK ) * Low saturation voltage VCE(sat)=0.55V(Max.)(IC/IB=6A/0.3A) .050 (1.27) .030 (0.77) DPAK .028 (0.70) .019 (0.50) .035 (0.90) .181 (4.60) .024 (0.60) .268 (6.80) .252 (6.40) C (3) CIRCUIT .020 (0.51) (1) (3) (2) .050 (1.27) .020 (0.51) .110 (2.80) .087 (2.20) * NPN Cilicon Transistor .394 (10.00) .354 (9.00) .228(5..80) .217 (5.40) CONSTRUCTION .094 (2.38) .086 (2.19) .022 (0.55) .018 (0.45) .023 (0.58) .018 (0.46) 1 Base 2 Emitter (1) B 3 Collector ( Heat Sink ) E (2) Dimensions in inches and (millimeters) DPAK MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS CONDITION SYMBOL CHT5113PPT UNITS Collector - Base Voltage Open Emitter VCBO 150 Volts Collector - Emitter Voltage Open Base VCEO 60 Volts Emitter - Base Voltage Open Collector VEBO 6 Volts IC 6 Amps ICM 20 Amps PTOT 1.0 Collector Current DC Peak Collector Current Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature TA ≤ 25OC TSTG TJ TAMB W -55 to +150 o C +150 o C -55 to +150 o C 2007-05 RATING CHARACTERISTIC CURVES ( CHT5113PPT ) CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS SYMBOL MIN. TYPE MAX. UNITS IC=100uA BVCBO 150 170 - Volts Collector-Emitter breakdown voltage IC=10mA BVCEO 60 70 - Volts Emitter-Base breakdown voltage IE=100uA BVEBO 6 8 - Volts Collector Cut-off Current IE=0; VCB=120V ICBO - - 50 nA Emitter Cut-off Current IC=0; VEB=6V IEBO - - 10 nA DC Current Gain VCE=1V; IC=10mA VCE=1V; IC=2A VCE=1V; IC=5A VCE=1V; IC=10A hFE Collector-Emitter Saturation Voltage IC=100mA; IB=5mA IC=1A; IB=50mA IC=2A; IB=100mA IC=6A; IB=300mA Base-Emitter Saturation Voltage Collector-Base breakdown voltage CONDITION 100 - - 120 75 - 200 100 30 300 - VCEsat - 20 80 150 400 120 220 550 IC=6A; IB=300mA VBEsat - 1.15 1.3 Volts Base-Emitter On Voltage VCE=1V; IC=6A VBEon - 1.05 1.2 Volts Collector Output Capacitance IE=ie=0; VCB=10V; f=1MHz Cob - 50 - pF Transition Frequency IE=-100mA; VCE=10V fT - 150 - MHz 50 mVolts RATING CHARACTERISTIC CURVES ( CHT5113PPT ) Figure 1. Collector-Emitter Saturation Voltage vs Collector Current Figure 2. Base-Emitter Saturation Voltage vs Collector Current 10 IC/IB=20 BASE-EMITTER SATURATION VOLTAGE, VBEsat(V) COLLECTOR-EMITTER SATURATION VOLTAGE, VCEsat(mV) 1000 100 Ta = 25oC 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT, IC(A) DC CURRENT GAIN, hFE VCE=1.0V Ta = 25oC 100 10 0.001 0.01 0.1 1 COLLECTOR CURRENT, IC(A) 1 Ta = 25oC 0.1 0.001 0.01 0.1 1 COLLECTOR CURRENT, IC(A) Figure 3. DC Current Gain 1000 IC/IB=20 10 10