CHENMKO ENTERPRISE CO.,LTD 2SC2411KPT SURFACE MOUNT Medium Power NPN Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. (SOT-23) * Low saturation voltage V * Low cob. Cob=6.0pF(Typ.) CE(sat)=0.4V(max.)(I C=500mA) .019 (0.50) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. (1) .066 (1.70) * NPN Silicon Transistor * Epitaxial planner type .110 (2.80) .082 (2.10) .119 (3.04) CONSTRUCTION .018 (0.30) .041 (1.05) .033 (0.85) SOT-23 (3) (2) MARKING .045 (1.15) .033 (0.85) CIRCUIT (1) B .002 (0.05) C (3) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .055 (1.40) .047 (1.20) * HFE(P):PT * HFE(Q):NC * HFE(R):1P- SOT-23 Dimensions in inches and (millimeters) E (2) MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. MAX. UNITS Collector - Base Voltage RATINGS Open Emitter CONDITION VCBO - 40 Volts Collector - Emitter Voltage Open Base VCEO - 32 Volts Emitter - Base Voltage Open Collector VEBO - 5 Volts IC - 500 mAmps Peak Collector Current ICM - 500 mAmps Peak Base Current IBM - 10 mAmps PTOT - 350 mW TSTG -55 +150 o C C C Collector Current DC Total Power Dissipation TA ≤ 25OC; Note 1 Storage Temperature Junction Temperature Operating Ambient Temperature TJ - +150 o TAMB -55 +150 o Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2002-10 RATING CHARACTERISTICS ( 2SC2411KPT ) ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. TYPE MAX. UNITS Collector Cut-off Current PARAMETERS IE=0; VCB=20V CONDITION ICBO - - 1.0 uA Emitter Cut-off Current IC=0; VEB=4V ICEO - - 1.0 uA DC Current Gain VCE=3V; Note 1 IC=100mA; Note 2 hFE 82 - 390 Collector-Emitter Saturation Voltage IC=500mA; IB=50mA VCEsat - - 0.4 Volts Base-Emitter Saturatio Voltage IC=500mA; IB=50mA VBEsat - - 1.1 Volts Output Collector Capacitance IE=ie=0; VCB=12V; f=1MHz Cob - 6.0 - pF Transition Frequency IC=20mA; VCE=5V; f=100MHz fT - 250 - MHz Note : 1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02. 2. hFE: Classification P: 82 to 180, Q: 120 to 270, R: 180 to 390 RATING CHARACTERISTIC CURVES ( 2SC2411KPT ) Fig.2 Grounded emitter propagation characteristics 1000 100 VCE=6V COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA) 500 200 100 Ta=100OC 50 25OC 80OC 25OC 20 10 - 55OC 5 2 1 0.5 Grounded emitter output characteristics (1) Ta=25OC 0.50 mA A 0.45m A 0.40m 0.35mA 0.30mA 0.25mA 50 0.20mA 0.15mA 0.10mA 0.05mA Fig.3 Grounded emitter output characteristics (2) 500 COLLECTOR CURRENT : IC(mA) Fig.1 Ta=25OC 2mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 400 300 0.8mA 200 0.6mA 0.4mA 100 0.2mA 0.2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 BASE TO EMITTER VOLTAGE : VBE(V) IB=0A 0 0 1 2 3 4 5 COLLECTOR TO EMITTER VOLTAGE : VCE(V) 0 0 IB=0A 1 2 3 4 5 COLLECTOR TO EMITTER VOLTAGE : VCE(V) RATING CHARACTERISTIC CURVES ( 2SC2411KPT ) 1000 Ta=25OC lC/lB=10 VCE=3V 500 0.5 0.2 0.1 0.05 O C Ta=100 O 75 C O 50 C O 100 25 C O 0C OC 50 - 25O C - 50 200 20 0.02 0.5 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC(mA) COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib (pF) Fig.7 Ta=25OC f=1MHz IE=0A IC=0A Cib 20 Co 10 b 5 2 0.5 1 2 5 10 20 0.5 1 2 5 10 20 50 100 200 5001000 COLLECTOR CURRENT : IC(mA) Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 50 10 0.1 0.2 50 COLLECTOR TO BASE VOLTAGE : VCB(V) EMITTER TO BASE VOLTAGE : VEB(V) Fig. 6 Gain bandwidth product vs. emitter current 500 TRANSITION FREQUENCY : fT(MHz) 1 Fig.5 DC current gain vs. collector current DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) Fig.4 Collector-emitter saturation voltage vs. collector current Ta=25OC VCE=5V 200 100 50 0.5 1 2 5 10 20 EMITTER CURRENT : IE(mA) 50