CHENMKO ENTERPRISE CO.,LTD 2SA2030PT SURFACE MOUNT Low Ferquency PNP Transistor VOLTAGE 12 Volts CURRENT 0.5 Ampere APPLICATION * For switching,for muting. FEATURE SOT-723 * Small surface mounting type. (SOT-723) * A collector current is large. * Collector saturation voltage is low. VCE(sat)<=250mA At Ic=200mA/IB=10mA (3) CONSTRUCTION (2) 0.17~0.27 0.4 1.15~1.25 0.4 0.75~0.85 * PNP Silicon Transistor 0.27~0.37 (1) 0.17~0.27 0.75~0.85 MARKING * 36 0.45~0.55 0.11~0.14 C (3) CIRCUIT 1.15~1.25 B (1) SOT-723 Dimensions in millimeters E (2) MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. MAX. UNITS Collector - Base Voltage RATINGS Open Emitter CONDITION VCBO - -15 Volts Collector - Emitter Voltage Open Base VCEO - -12 Volts Collector Current DC IC - -500 mAmps Peak Collector Current ICM - -1000 mAmps PTOT - 150 Total Power Dissipation TA ≤ 25OC; Note 1 mW Storage Temperature TSTG -55 +150 o Junction Temperature TJ - +150 o C TAMB -55 +150 o C Operating Ambient Temperature C Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2004-06 RATING CHARACTERISTICS ( 2SA2030PT ) THERMAL CHARACTERISTICS CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. Typ. MAX. UNIT uA − − -0.1 collector-base breakdown voltage IC =-10uA collector-emitter breakdown voltage IC =-1mA -15 − V -12 − − − V BVEBO emitter-base breakdown voltage IE =-10uA -6 − − V hFE DC current transfer ratio VCE=-2V , IC=-10mA 270 − 680 VCEsat collector-emitter saturation voltage IC/IB=-200mA/-10mA − -100 -250 mV Cob collector output capacitance IE = 0; VCB = -10V ; f = 1 MH z − 6.5 − pF fT transition frequency IE = -10 mA; VCE= - 2V; f = 30 MHz − 260 − MHz ICBO collector cut-off current BVCBO BVCEO Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. VCB=-15V RATING CHARACTERISTIC CURVES ( 2SA2030PT ) 1000 VCE=2V Ta=125°C Ta=25°C Ta= −40°C 100 50 20 10 5 Ta=125°C Ta=25°C Ta= −40°C 100 50 20 10 5 100 1.0 1 1.5 20 10 5 2 1 2 5 10 20 50 100 200 Fig.1 Grounded Emitter Propagation Characteristics Fig.2 DC Current Gain vs. Collector Current 200 100 50 IC / IB=50 IC / IB=20 20 IC / IB=10 10 5 2 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) BASER SATURATION VOLTAGE : VBE (sat) (mV) COLLECTOR CURRENT : IC (mA) Ta=25°C 10000 IC / IB=20 5000 Ta= −40°C Ta=25°C Ta=125°C 2000 1000 Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ) 500 200 100 50 20 10 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.5 Base-Emitter Saturation Voltage vs.Collecter Current 1000 IE=0A f=1MHz Ta=25°C 500 200 100 50 Cib 20 10 Cob 5 2 1 0.1 0.2 0.5 1 2 5 1 500 1000 BASE TO EMITTER VOLTAGE : VBE (V) 500 Ta=125°C Ta=25°C Ta= −40°C 50 10 20 50 100 EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector Output Capacitance vs. Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.3 Collector-Emitter Saturation Voltage vs. Collector Current (Ι) 1000 TRANSITION FREQUENCY : fT (MHz) 0.5 IC / IB=20 200 2 0 1000 COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) 500 200 2 1 1000 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) DC CURRENT GAIN : hFE 200 1 VCE=2V 500 500 EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR CURRENT : IC (mA) 1000 VCE=2V Ta=25°C 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 EMITTER CURRENT : IC (mA) Fig.6 Gain Bandwidth Product vs. Emitter Current