CHENMKO 2SB1386PT

CHENMKO ENTERPRISE CO.,LTD
2SB1386PT
SMALL FLAT
PNP Epitaxial Transistor
VOLTAGE 20 Volts
CURRENT 5 Amperes
APPLICATION
* Power driver and Strobe Flash .
FEATURE
*
*
*
*
SC-62/SOT-89
Small flat package. (SC-62/SOT-89)
Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A)
PC= 2.0W (mounted on ceramic substrate).
High saturation current capability.
1.6MAX.
4.6MAX.
0.4+0.05
2.5+0.1
0.8MIN.
MARKING
* hFE Classification P : P86
+0.08
0.45-0.05
Q : Q86
R: R86
4.6MAX.
1.7MAX.
+0.08
0.40-0.05
+0.08
0.40-0.05
1.50+0.1
1.50+0.1
1
1 Base
2
3
2 Collector ( Heat Sink )
CIRCUIT
3 Emitter
1
B
2
C
3
E
Dimensions in millimeters
SC-62/SOT-89
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
CONDITION
SYMBOL
2SB1386PT
UNITS
Collector - Base Voltage
Open Emitter
VCBO
-30
Volts
Collector - Emitter Voltage
Open Base
VCEO
-20
Volts
Emitter - Base Voltage
Open Collector
VEBO
-6
Volts
IC
-5
Amps
ICM
-10
Amps
PTOT
2.0
Collector Current DC
Peak Collector Current
Total Power Dissipation
TA ≤ 25OC; Note 1
Storage Temperature
Junction Temperature
Operating Ambient Temperature
Note
1. Transistor mounted on ceramic substrate by 40mmX40mmx0.7mm.
TSTG
TJ
TAMB
W
-55 to +150
o
C
+150
o
C
-55 to +150
o
C
2004-11
RATING CHARACTERISTIC CURVES ( 2SB1386PT )
CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
PARAMETERS
SYMBOL
MIN.
TYPE
MAX.
UNITS
IC=-50uA
BVCBO
-30
-
-
Volts
Collector-Emitter breakdown voltage
IC=-1mA
BVCEO
-20
-
-
Volts
Emitter-Base breakdown voltage
IE=-50uA
BVEBO
-6
-
-
Volts
Collector Cut-off Current
IE=0; VCB=-200V
ICBO
-
-
-0.5
uA
Emitter Cut-off Current
IC=0; VEB=-5V
ICEO
-
-
-0.5
uA
DC Current Gain
VCE=-2V; Note 1
IC=-0.5A
hFE
82
-
390
Collector-Emitter Saturation Voltage
IC=-4A; IB=-0.1A
VCEsat
-
-0.35
-1.0
Volts
Output Capacitance
IE=ie=0; VCB=-20V;
f=1MHz
CC
-
60
-
pF
Transition Frequency
IE=-0.05A; VCE=-6.0V;
f=100MHz
fT
-
120
-
MHz
Collector-Base breakdown voltage
CONDITION
Note :
1. hFE(2) Classification P: 82 to 180, Q: 120 to 270, R: 180 to 390.
RATING CHARACTERISTIC CURVES ( 2SB1386PT )
Fig.1 Grounded emitter propagation
characteristics
-5
Ta=100oC
25oC
-25oC
-2
-1
-0.5
-0.2
-0.1
-0.05
-0.02
-0.01
-5m
-4
-2
-5mA
-1
-0.4
-0.6 -0.8
-1.0
-1.2
0
-1.4
0
1000
VCE=-5V
500
200
-2V
100
-1V
50
20
Fig.4 DC current gain vs.
collector current ( II )
-1.2
IB 0mA
-1.6
-2.0
5000
VCE = -1V
500
DC CURRENT GAIN : hFE
Ta=100oC
25oC
-25oC
VCE=-2V
200
100
50
20
10
Ta=100oC
25oC
-25oC
1000
500
200
100
50
20
10
-0.01
-0.1
-1
-10
COLLECTOR CURRENT : IC (A)
-0.01
-0.1
-1
IC/IB=10
IC/IB=30
-0.5
Ta=100oC
25oC
-25oC
Ta=100oC
25oC
-25oC
-0.2
-0.1
-0.05
-0.02
-0.01
-2m
-0.01
-0.1
-1
COLLECTOR CURRENT : IC (A)
-10
COLLECTOR CURRENT : IC (A)
-1
-10
-10
Ta=25oC
-1
-0.5
-0.2
-0.1
-0.05
IC/IB=50
40
30
10
-0.02
-0.01
-2m
-0.01
-0.1
-10
-1
COLLECTOR CURRENT : IC (A)
Fig.8 Collector-emitter
saturation voltage vs.
collector current ( III )
-1
-0.1
-2
COLLECTOR CURRENT : I (A)
Fig.7 Collector-emitter
saturation voltage vs.
collector current ( II )
-2
5
-1m
-0.01
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation voltage
vs. collector current ( I )
2000
1000
5
-1m
Fig.5 DC current gain vs.
collector current ( III )
2000
5
-1m
-0.8
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
5000
-0.4
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
-0.2
Fig.9 Collector-emitter
saturation voltage vs.
collector current ( IV )
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
0
DC CURRENT GAIN : hFE
-10mA
-40mA
-35mA
-3
Ta=25oC
2000
10
-2m
-1m
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
5000
o
Ta=25 C
-30mA
-25mA
-20mA
-15mA
-50mA
-45mA
DC CURRENT GAIN : hFE
VCE = -2V
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : Ic (A)
-10
-5
Fig.3 DC current gain vs.
collector current ( I )
Fig.2 Grounded emitter output
characteristics
-2
IC/IB=40
-1
-0.5
Ta=100oC
25oC
-25oC
-0.2
-0.1
-0.05
-0.02
-0.01
-2m
-0.01
-0.1
-1
COLLECTOR CURRENT : IC (A)
-10