CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Digital Silicon Transistor DTr1:VOLTAGE 50 Volts DTr2:VOLTAGE 50 Volts CHUMD4PT CURRENT 50 mAmpere CURRENT 70 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * * * * SC-88/SOT-363 Low colloector-emitter saturation. High saturation current capability. Both the CHDTA114Y & CHDTC144E in one package. Built in bias resistor(R1=10kΩ, Typ. ) (1) (6) 0.65 1.2~1.4 2.0~2.2 0.65 (4) 0.15~0.35 (3) 1.15~1.35 0.8~1.1 0.08~0.15 0~0.1 0.1 Min. CIRCUIT 3 1 R1 DTr2 R2 2.15~2.45 R2 DTr1 R1 4 6 SC-88/SOT-363 Dimensions in millimeters CHDTC114E LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC Supply voltage − 50 V VIN Input voltage -10 +40 V − 50 − 100 − 150 mW +150 O C C C/W IO DC Output current IC(Max.) Tamb ≤ 25 OC, Note 1 mA PTOT Total power dissipation TSTG Storage temperature −55 TJ Junction temperature − 150 O RθJ-S Thermal resistance − 140 O junction - soldering point Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-04 CHDTA114Y LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC Supply voltage − -50 V VIN Input voltage -40 +6 V − -70 − -100 − 150 mW O C IO DC Output current IC(Max.) Tamb ≤ 25 OC, Note 1 mA PTOT Total power dissipation TSTG Storage temperature −55 +150 TJ Junction temperature − 150 O C Thermal resistance − 140 O C/W RθJ-S junction - soldering point Note 1. Transistor mounted on an FR4 printed-circuit board. CHDTC114E CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VIoff) Input off voltage IO=100uA; VCC=5.0V 0.5 − − V VI(on) Input on voltage IO=10mA; VO=0.3V − − 3.0 V VO(on) Output voltage IO=10mA; II=0.5mA − 0.1 0.3 V − II Input current VI=5V − 0.88 mA IC(off) Output current VI=0V; VCC=50V − − 0.5 uA hFE DC current gain IO=5mA; VO=5.0V 30 − − R1 Input resistor 7.0 10.0 13.0 KΩ R2/R1 fT Resistor ratio Transition frequency 0.8 − 1.0 250 1.2 − MHz IC=5mA, VCE=10.0V f=100MHz = Note 1.Pulse test: tp≤300uS; δ≤0.02. CHDTA114Y CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VIoff) Input off voltage IO=-100uA; VCC=-5.0V -0.3 − − V VI(on) Input on voltage IO=-1.0mA; VO=-0.3V − − -1.4 V VO(on) Output voltage IO=-5mA; II=-0.25mA − -0.1 -0.3 V II Input current VI=-5.0V − − -0.88 mA IC(off) Output current VI=0V; VCC=-50V − − -0.5 uA hFE DC current gain IO=-5.0mA; VO=-5.0V 68 − − R1 Input resistor 7.0 10.0 13.0 KΩ R2/R1 fT Resistor ratio Transition frequency 3.7 − 4.7 250 5.7 − MHz Note 1.Pulse test: tp≤300uS; δ≤0.02. IC=-5mA, VCE=-10.0V f=100MHz = RATING CHARACTERISTIC CURVES ( CHUMD4PT) CHDTC114E Typical Electrical Characteristics Fig.1 Input voltage vs. output current (ON characteristics) 100 Fig.2 Output current vs. input voltage (OFF characteristics) 10m 5m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 Ta =- 40OC O 25 = C 100OC 5 2 1 500m 200m 100m 100 200 500 1m 2m 2m 1m 500 VCC=5V Ta=100OC 25OC -40 OC 200 100 50 20 10 5 2 1 5m 10m 20m 50m 100m 0 0.5 OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current 1k 2.5 3.0 lO/lI=20 500m Ta=100 C 25OC -40OC 100 50 20 10 5 2 OUTPUT VOLTAGE : VO(on) (V) DC CURRENT GAIN : GI 2.0 1 VO =5V O 1 100 200 1.5 Fig.4 Output voltage vs. output current 500 200 1.0 INPUT VOLTAGE : VI(off) (V) Ta=100OC 25OC -40 OC 200m 100m 50m 20m 10m 5m 2m 500 1m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) 1m 100 200 500 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) RATING CHARACTERISTIC CURVES ( CHUMD4PT) CHDTA114Y Typical Electrical Characteristics Fig.1 Input voltage vs. output current (ON characteristics) -100 Fig.2 Output current vs. input voltage (OFF characteristics) -10m -5m VO=- 0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) -50 -20 -10 -5 -2 Ta =- 40OC O 25 = C 100OC -1 -500m -200m -100m -100 -200 -500 -1m -2m -2m -1m -500 Ta=100OC 25OC -40 OC -200 -100 -50 -20 -10 -5 -2 -1 -0 -5m -10m -20m -50m -100m VCC =- 5V -0.5 Fig.3 DC current gain vs. output current 1k -1 VO =- 5V -2.5 -3.0 lO/lI=20 -500m Ta=100OC 25OC -40OC 100 50 20 10 5 2 1 -100 -200 -2.0 Fig.4 Output voltage vs. output current OUTPUT VOLTAGE : VO(on) (V) DC CURRENT GAIN : GI 200 -1.5 INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A) 500 -1.0 -200m -100m Ta=100OC 25OC -40 OC -50m -20m -10m -5m -2m -500 -1m -2m -5m -10m -20m -50m -100m OUTPUT CURRENT : IO (A) -1m -100 -200 -500 -1m -2m -5m -10m -20m -50m -100m OUTPUT CURRENT : IO (A)