CHENMKO ENTERPRISE CO.,LTD CHEMX18PT SURFACE MOUNT Dual Silicon Transistor VOLTAGE 15 Volts CURRENT 500 mAmpere APPLICATION * Small Signal Amplifier . FEATURE * Small surface mounting type. (SOT-563) * Low saturation voltage VCE(sat)=0.25V(max.)(IC=200mA) * Low cob. Cob=7.5pF(Typ.) SOT-563 * PC= 150mW (Total),120mW per element must not be exceeded. * High saturation current capability. (1) (5) * Two the 2SC5585 in one package. 0.50 0.9~1.1 * NPN Silicon Transistor 1.5~1.7 0.50 (4) (3) 0.15~0.3 MARKING 1.1~1.3 *X8 0.5~0.6 0.09~0.18 CIRCUIT 6 4 1 3 1.5~1.7 SOT-563 Dimensions in millimeters 2SC5585 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO Collector-base voltage − 15 V VCEO Collector-emitter voltage − 12 V VEBO Emitter-base voltage − 6 V − 500 NOTE.1 − 1000 NOTE.2 − 150 +150 IC DC Output current Icp PC Total power dissipation TSTG Storage temperature −55 TJ Junction temperature − Note 1. Single pulse Pw=1ms 2. 120mW per element must not be exceeded. Each terminal mounted on a recommended land. 150 mA mW O C O C 2004-07 RATING CHARACTERISTIC CURVES ( CHEMX18PT ) 2SC5585 CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. BVCEO Collector-emitter breakdown voltage IC=1mA 12 − − V BVCBO Collector-base breakdown voltage IC=10uA 15 − − V IE=10uA 6 − V BVEBO Emitter-base breakdown voltage ICBO Collector cut-off current IEBO Emitter cut-off current DC current gain hFE VCE(sat) Collector-emitter saturation voltage Cob Collector output capacitance fT Transition frequency Note 1.Pulse test: tp≤300uS; δ≤0.02. TYP. MAX. UNIT VCB=15V − − − 100 nA VEB=6V − − 100 nA VCE=2V,IC=10mA 270 − 680 − IC=200mA,IB=10mA 90 250 mV VCB=10V,IE=0mA,f=1MHZ − − 7.5 − VCE=2V,IE=-10mA,f=100MHZ − 320 − pF MHz RATING CHARACTERISTIC CURVES ( CHEMX18PT ) 2SC5585 Typical Electrical Characteristics Fig.2 DC current gain vs. collector current Fig.1 Ground emitter propagation characteristics 1000 VCE=2V pulsed O DC CURRENT GAIN : hFE 25 C 100 Ta=25 C O O O Ta=-40 C 10 1 O -40 C 100 10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1 1.4 1000 O Ta=25 C pulsed 100 O Ta=125 C O Ta=25 C 10 O Ta=-40 C 1 1 10 100 COLLECTOR CURRENT : IC (mA) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) Fig.3 Collector-emitter saturation voltage vs. collector current ( I ) 10 100 1000 COLLECTOR CURRENT : IC(mA) BASE TO EMITTER VOLTAGE : VBE(V) COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) VCE=2V pulsed Ta=125 C O Ta=125 C COLLECTOR CURRENT : IC(mA) 1000 Fig.4 Collector-emitter saturation voltage vs. collector current ( II ) 1000 IC/IB=20 pulsed 100 O Ta=125O C Ta=25 C O Ta=-40 C 10 1 1 10 100 COLLECTOR CURRENT : IC (mA) 1000 RATING CHARACTERISTIC CURVES ( CHEMX18PT ) 2SC5585 Typical Electrical Characteristics 1000 1000 IC/IB=20 pulsed Ta=-40OOC Ta=25 C O Ta=125 C 100 10 1 1 10 100 1000 EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR CURRENT : IC(mA) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 1000 Fig.6 Gain bandwidth product vs. collector current TRANSITION FREQUENCY : fT(MHZ) BASER SATURATION VOLTAGE : VBE(sat)(mV) Fig.5 Base-emitter saturation voltage vs. collector current IE=0A f=1MHOZ Ta=25 C 100 Cib 10 Cob 1 1 10 100 1000 COLLECTOR TO BASE VOLTAGE : VCB(V) VCE=2V O Ta=25 C pulsed 100 10 1 1 10 100 EMITTER CURRENT : IE(mA) 1000