CHENMKO ENTERPRISE CO.,LTD 2SD1781KPT SURFACE MOUNT NPN Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE (3) (2) .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) * HFE(Q):D9C* HFE(R):NU .045 (1.15) .033 (0.85) C (3) .002 (0.05) MARKING .066 (1.70) * NPN Switching Transistor .110 (2.80) .082 (2.10) .119 (3.04) (1) CONSTRUCTION CIRCUIT .019 (0.50) .041 (1.05) .033 (0.85) * Low voltage (Max.=32V) . * High saturation current capability. * Voltage controlled small signal switch. .018 (0.30) SOT-23 * Small surface mounting type. (SOT-23) * Corrector peak current (Max.=1500mA). * Suitable for high packing density. (1) B E (2) SOT-23 Dimensions in inches and (millimeters) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 32 V VEBO emitter-base voltage open collector − 5 V IC collector current DC − 0.8 ICM peak collector current − 1.5 A A − 200 mW Ptot total power dissipation Tstg storage temperature −55 +150 °C Tj junction temperature − 150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-3 RATING CHARACTERISTIC CURVES ( 2SD1781KPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V 32 − − 5 − V IE = 0; VCB = 20 V − 500 nA IC = 0; VEB = 4 V − nA VCE = 3V; note 1 120 500 390 IC = 100 mA IC =-500 0 mA, IB=50 mA − 400 mV collector capacitance IE = ie = 0; VCB =10 V ; f = 1 MHz − 10 Typ. pF transition frequency IC = 50 mA; VCE = 5 V ; f = 100 MHz − 150 Typ. MHz BVCBO collector-base breakdown voltage IE = 0; IC =-50 uA 40 BVCEO collector-emitter breakdown voltage IB = 0; IC =-1 mA BV EBO emitter-base breakdown voltage IC = 0; IE =-50 uA ICBO collector cut-off current IEBO emitter cut-off current hFE DC current gain VCEsat collector-emitter saturation voltage Cc fT Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2. hFE: Q Grade: 120~270 R Grade: 180~390 V RATING CHARACTERISTIC CURVES ( 2SD1781KPT ) Fig.1 Grounded emittterpropgation characteristics 1000 Fig.2 Grounded emitter output characteristics 400 O Ta=25 C VCE =6V 500 O Ta=25 C T COLLECTOR CURRENT: IC (mA) COLLOCTOR CURRENT : IC (mA) 1mA 100 50 20 10 5 2 1 900uA 300 800uA 700uA 600uA 200 500uA 400uA 300uA 100 200uA 100uA 0.5 0.2 1 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.2 BASE TO EMITTER VOLTAGE: VBE (V) 2 4 6 8 10 0 COLLECTOR TO EMITTER VOLTAGE: VCE (V) Fig.3 DC Current gain vs. collector current VCE =5V 500 O Ta=100 C 200 O 25 C O -55 C 100 50 20 10 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT: IC (mA) COLLECTOR SATURATION VOLTAGE: VCE (sat) mV -1000 1000 DC CURRENT GAIN: hFE Fig.4 Collector-emitter saturation voltage vs. collector current (1) O Ta=25 C -100 IC/IB=50 20 10 -10 -1 -1m -10m -100m COLLECTOR CURRENT: IC (A) -1 RATING CHARACTERISTIC CURVES ( 2SD1781KPT ) 1000 Fig.6 Gain bandwidthproduct vs. emitter current 1000 IC/IB=10 O Ta=25 C VCE =5V 500 500 TRANSITION FREQUENCY: fT (MHz) COLLECTOR SATURATION VOLTAGE: VCE (sat) mV Fig.5 Collector-emitter saturation voltage vs. collector current (2) 200 O Ta=100 C O 25 C -55OC 100 50 20 200 100 50 20 10 10 1 2 5 10 20 50 100 200 500 1000 -1 COLLECTOR CURRENT: IC (A) -10 -20 O O Ta =25 C f=1MHZ IE=0A 50 20 10 5 0.1 0.2 0.5 1.0 2.0 5.0 10 -50 -100 -200 Fig.8 Emitter input capacitance vs. emitter-base voltage 20 50 COLLECTOR TO BASE VOLTAGE : VCS (V) Ta =25 C f=1MHZ IC=0A 200 EMITTER OUTPUT CAPACITANCE:Cib (pF) COLLECTOR OUTPUT CAPACITANCE:Cob (pF) -5 EMITTER CURRENT: IE (mA) Fig.7 Collector output capacitance vs. collector-base voltage 100 -2 100 50 20 10 5 0.1 0.2 0.5 1.0 2.0 5.0 10 EMITTER TO BASE VOLTAGE : VEB (V)