CHENMKO ENTERPRISE CO.,LTD CHT1198PT SURFACE MOUNT PNP Switching Transistor VOLTAGE 80 Volts CURRENT 0.5 Ampere FEATURE * Small surface mounting type. (SOT-23) * Low Collector-Emitter saturation voltage. * High breakdown voltage. .019 (0.50) (3) (2) .055 (1.40) .047 (1.20) C (3) E (2) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) * J22 @hFE as Q Grade * J23 @hFE as R Grade CIRCUIT .066 (1.70) .119 (3.04) MARKING .110 (2.80) .082 (2.10) (1) .045 (1.15) .033 (0.85) .002 (0.05) CONSTRUCTION * PNP Silicon Transistor .018 (0.30) .041 (1.05) .033 (0.85) SOT-23 (1)B SOT-23 Dimensions in inches and (millimeters) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − -80 V VCEO collector-emitter voltage open base − -80 V VEBO emitter-base voltage open collector − -5 V IC collector current DC − -0.5 A Ptot total power dissipation − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. Tamb ≤ 25 °C; note 1 2007-7 RATING CHARACTERISTIC CURVES ( CHT1198PT ) ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BVCBO collector-base breakdown voltage IE = 0; IC =-50 uA -80 − V BVCEO collector-emitter breakdown voltage IB = 0; IC =-2 mA -80 − V BV EBO emitter-base breakdown voltage IC = 0; IE =-50 uA -5 − V ICBO collector cut-off current IE = 0; VCB = - 50 V − -500 nA IEBO emitter cut-off current IC = 0; VEB = - 4 V − -500 nA hFE DC current gain VCE = -3V; note 1 120 390 VCEsat collector-emitter saturation voltage IC = -100 mA IC = -500 0 mA, IB=-50 mA − -500 Cc collector capacitance IE = ie = 0; VCB =-10 V ; f = 1 MHz − 11Typ. pF fT transition frequency IE = 50 mA; VCE = - 1 0 V ; f = 100 MHz − 180Typ. MHz Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2. hFE: Q Gade: 120~270 R Gade: 180~390 mV RATING CHARACTERISTIC CURVES ( CHT1198PT ) Figure 1. Grounded Emitter Propagation Characteristics Figure 2. Collector-Emitter Saturation Voltage vs Collector Current VCE=-3V IC/IB=10 COLLECTOR SATURATION VOLTAGE, -VCEsat(V) COLLECTOR CURRENT, -IC(mA) 100 o Ta = 25 C Ta = 100oC Ta = -25oC 10 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 BASE-EMITTER VOLTAGE, -VBE(V) DC CURRENT GAIN, hFE VCE=-3.0V Ta = 25oC 10 0.001 Ta = 100oC Ta = -25oC 100 0.01 0.1 COLLECTOR CURRENT, -IC(A) Ta = 100oC 0.1 Ta = -25oC Ta = 25oC 0.01 0.001 0.01 0.1 COLLECTOR CURRENT, -IC(A) Figure 3. DC Current Gain 1000 1.0 1.0 1.0