CHENMKO ENTERPRISE CO.,LTD CHT4126PT SURFACE MOUNT General Purpose Transistor VOLTAGE 25 Volts CURRENT 200 mAmpere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE SOT-23 CONSTRUCTION * PNP Silicon Transistor .066 (1.70) .119 (3.04) .110 (2.80) .082 (2.10) (1) (3) (2) .055 (1.40) .047 (1.20) MARKING .103 (2.64) .086 (2.20) .045 (1.15) .033 (0.85) (3) C CIRCUIT .007 (0.177) * QT .028 (0.70) .020 (0.50) .002 (0.05) * Low colloector-emitter saturation. * High saturation current capability. .019 (0.50) .041 (1.05) .033 (0.85) * High current gain. * Suitable for high packing density. .018 (0.30) * Surface mount package. (SOT-23) (1) B (2) E SOT-23 Dimensions in inches and (millimeters) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − -25 V VCEO collector-emitter voltage open base − -25 V VEBO emitter-base voltage open collector − -4 V IC collector current (DC) − -200 mA Ptot total power dissipation − 350 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 2. Transistor mounted on an FR4 printed-circuit board. Tamb ≤ 25 °C; note 2 2004-8 RATING CHARACTERISTIC CURVES ( CHT4126PT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)CBO collector-base breakdown voltage collector-emitter breakdown voltage -25 -25 − V(BR)CEO IC = -10uA ; IE = 0A IC = -1mA ; IB = 0A V − V V(BR)EBO emitter-base breakdown voltage IE = -10uA ; IC = 0A -4 − V ICBO collector cut-off current IE = 0; VCB = -20 V − -50 nA IEBO emitter cut-off current IC = 0; VEB = - 3 V − -50 nA hFE hFE VCEsat DC current gain DC current gain collector-emitter saturation IC = -50 mA; VCE I= -1V; note 3 IC = -2 mA; VCE = -1V IC = -50 mA; IB = -5 mA 120 − 360 -400 VBEsat base-emitter saturation voltage IC = -50 mA; IB = -5 mA − -950 mV Cobo IE = ie = 0; VCB = - 5 V ; f = 1 MHz − 4.5 10 pF Cibo output capacitance input capacitance fT transition frequency − MHz Note 3. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 60 IE = ie = 0; VCB = - 5 V ; f = 1 MHz − IC = -10mA; VCE = - 2 0 V ; f = 100 MHz 250 − mV pF RATING CHARACTERISTIC CURVES ( CHT4126PT ) 250 V CE = 1 .0V 125 °C 200 150 25 °C 100 50 0.1 - 40 °C 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRE NT (mA) 50 100 Base-Emitter Saturation Voltage vs Collector Current β = 10 1 - 40 °C 0.8 25 °C 125 °C 0.6 0.4 0.2 0 1 10 100 I C - COLLECTOR CURRE NT (mA) 200 V CESAT - COLLECTOR EMITTER VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current VBE( ON)- BASE EMITTER ON VOLTAGE (V) V BESAT - BASE EM ITTE R VOLTAGE (V) h F E - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.3 β = 10 0.25 0.2 0.15 25 °C 0.1 125°C 0.05 0 - 40 °C 1 1 0.8 - 40 °C 125 °C 0.4 = 25V 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 25 10 C obo CAPACITANCE (pF) I CBO - COLLE CTOR CURRENT (nA) V CE = 1V 0.2 Common-Base Open Circuit Input and Output Capacitance vs Reverse Bias Voltage 10 1 0.1 0.01 25 25 °C 0.6 100 CB 200 Base Emitter ON Voltage vs Collector Current Collector-Cutoff Current vs Ambient Temperature V 10 100 I C - COLLECTOR CURRENT (mA) 50 75 100 TA - AMBIE NT TEMP ERATURE (° C) 125 8 6 4 C ibo 2 0 0.1 1 REVERSE BIAS VOLTAGE (V) 10 RATING CHARACTERISTIC CURVES ( CHT4126PT ) Typical Characteristics Noise Figure vs Frequency Noise Figure vs Source Resistance 6 12 NF - NOISE FIGURE (dB) NF - NOISE FIGURE (dB) V CE = 5.0V 5 4 3 I C = 100 µA, R S = 200Ω 2 I C = 1.0 mA, R S = 200Ω 1 I C = 100 µA, R S = 2.0 kΩ 0 0.1 1 10 f - FREQUENCY (kHz) V CE = 5.0V f = 1.0 kHz 10 I C = 1.0 mA 8 6 4 I C = 100 µA 2 0 0.1 100 1 10 R S - SOURCE RESISTANCE ( kΩ ) Switching Times vs Collector Current Turn On and Turn Off Times vs Collector Current 500 500 ts tf 10 I B1 = I B2 = Ic t off 100 TIME (nS) 100 TIME (nS) 100 tr Ic t on I B1 = 10 t on VBE(OFF) = 0.5V 10 t off I = I = B1 B2 10 Ic 10 td 1 1 10 I C - COLLECTOR CURRENT (mA) 1 100 1 I 100 Current Gain 1000 V CE = 10 V f = 1.0 kHz 500 h fe - CURRENT GAIN h oe - OUTPUT ADMITTANCE ( µmhos) Output Admittance 1000 10 - COLLECTOR CURRENT (mA) 100 V CE = 10 V f = 1.0 kHz 200 100 50 20 10 0.1 1 I C - COLLECTOR CURRENT (mA) 10 10 0.1 1 I C - COLLECTOR CURRENT (mA) 10