CHENMKO ENTERPRISE CO.,LTD CH837UPNPT SURFACE MOUNT PNP&NPN Muti-Chip General Purpose Transistor VOLTAGE 50 Volts CURRENT 150 mAmperes APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE SC-74/SOT-457 * Small surface mounting type. (SC-74/SOT-457 * High current gain. * Suitable for high packing density. (1) * Low colloector-emitter saturation. * High saturation current capability. * Two internal isolated PNP and NPN transistors in one package. (6) 0.95 1.7~2.1 2.7~3.1 0.95 (3) (4) 0.25~0.5 CONSTRUCTION 1.4~1.8 * PNP and NPN transistors in one package. 0.935~1.3 0.08~0.2 0~0.15 0.3~0.6 CIRCUIT C1 B2 E2 4 5 6 2.6~3.0 TR2 TR1 3 2 1 E1 B1 C2 SC-74/SOT-457 Dimensions in millimeters LIMITING VALUES of TR1( PNP Transistor ) In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − -50 V VCEO collector-emitter voltage open base − -50 V VCES collector-base voltage open emitter − -50 V VEBO emitter-base voltage open collector − -6 V IC collector current (DC) − -150 mA ICM peak collector current − -200 mA IBM peak base current − -30 mA Ptot total power dissipation − 200 mW Tstg storage temperature −55 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −55 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-01 RATING CHARACTERISTIC ( CH837UPNPT ) LIMITING VALUES of TR2( NPN Transistor ) In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 50 V VCES collector-base voltage open emitter − 50 V VEBO emitter-base voltage open collector − 7 V IC collector current (DC) − 150 mA ICM peak collector current − 200 mA IBM peak base current − 30 mA Ptot total power dissipation − 200 mW Tstg storage temperature −55 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −55 +150 °C T amb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS VALUE UNIT note 1 415 K/W thermal resistance from junction to ambient Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS of TR1( PNP Transistor ) Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IE = 0; VCB = 50 V − − -0.1 uA IC = 0; VCB = 50 V; TA = 125 OC − − -50 uA emitter cut-off current IC = 0; VEB = - 6 V − − -0.1 uA hFE DC current gain IC = -2.0 mA; VCE = -6.0V; note 1 120 − 400 VCEsat collector-emitter saturation voltage IC = -100 mA ; IB = -10 mA − -200 -400 Cc collector capacitance IE = ie = 0; VCB = -10V; f = 1 MHz − 4.0 5.0 pF fT transition frequency IC = -1mA; VCE = -10V ; f = 100 MHz − 120 − MHz ICBO IEBO collector cut-off current Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2. hFE: Y:120~240; G:200~400 mV RATING CHARACTERISTIC ( CH837UPNPT ) CHARACTERISTICS of TR2 ( NPN Transistor ) Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS MIN. TYP. MAX. UNIT IE = 0; VCB = -50 V − − 0.1 uA IC = 0; VCB = -50 V; TA = 125 OC − − 50 uA IEBO emitter cut-off current IC = 0; VEB = 6 V − − 0.1 uA hFE DC current gain IC = 2.0 mA; VCE = 6.0V; note 1 120 − 400 VCEsat collector-emitter saturation voltage IC = 100 mA ; I B = 10 mA − 100 300 Cc collector capacitance IE = ie = 0; VCB = 10V ; f = 1 MHz − 2.0 3.5 pF fT transition frequency IC = 1 mA; VCE = 10V ; f = 100 MHz − 150 − MHz mV Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2. hFE: Y:120~240; G:200~400 RATING CHARACTERISTIC CURVES ( CH837UPNPT ) Typical Pulsed Current Gain vs Collector Current 500 VCE = 5V 400 125 °C 300 25°C 200 100 0 0.01 - 40°C 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) VCESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN CHARACTERISTIC CURVES of Tr1 ( PNP Transistor ) Collector-Emitter Saturation Voltage vs Collector Current 0.3 0. 25 β = 10 0.2 125 °C 0. 15 0.1 0.0 5 0.1 25 °C - 40 °C 1 10 I C - COLLECTOR CURRENT (mA) 100 Base-Emitter Saturation Voltage vs Collector Current 1.2 β = 10 1 0.8 - 40 °C 25°C 0.6 125°C 0.4 0.2 0 0.1 1 10 I C - COLLECTOR CURRE NT (mA) 100 VBEON- BASE-EMITTER ON VOLTAGE (V) VBESAT - BASE EM ITTE R VOLTAGE (V) RATING CHARACTERISTIC CURVES ( CH837UPNPT ) Base-Emitter ON Voltage vs Collector Current 1 0.8 - 40 °C 25 °C 0.6 125°C 0.4 V CE = 5.0 V 0.2 1 400 Input and Output Capacitance vs Reverse Voltage Collector-Cutoff Current vs Ambient Temperature 100 100 f = 1.0 MH z VCB = 50V CAPACITANCE (pF) I CBO - COLLE CTOR CURRENT (uA) 10 100 I C - COLLECTOR CURRENT (mA) 10 1 0.1 0.01 25 50 75 100 T A - AMBIE NT TEMP ERATURE ( C) 10 Cob 1 0.1 125 Cib ° 1 10 V CE - COLLECTOR VOLTAGE (V) 100 Typical Pulsed Current Gain vs Collector Current 600 V CE = 5. 0 V 125°C 500 300 25°C - 40°C 100 0 0.01 Collector-Emitter Saturation Voltage vs Collector Current 0.3 0.25 400 200 VCESAT - COLLECTOR EMITTE R VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN CHARACTERISTIC CURVES of Tr2 ( NPN Transistor ) 0.2 0.15 0.1 0.03 1 3 10 30 I C - COLLECTOR CURRENT (mA) 100 25°C 0.1 0.05 0.03 β = 10 0 0.1 125 °C - 40°C 1 10 I C - COLLECTOR CURRENT (mA) 100 Base-Emitter Saturation Voltage vs Collector Current 1 - 40 °C 0.8 25 °C 0.6 125°C 0.4 β = 10 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 VBEON- BASE-EMITTER ON VOLTAGE (V) VBESAT - COLLECTOR-EMITTER VOLTAGE (V) RATING CHARACTERISTIC CURVES ( CH837UPNPT ) Base-Emitter ON Voltage vs Collector Current 1 - 40 °C 0.8 25 °C 0.6 125°C 0.4 V CE = 5.0 V 0.2 1 400 Input and Output Capacitance vs Reverse Voltage Collector-Cutoff Current vs Ambient Temperature 100 100 f = 1.0 MHz VCB = 50V CAPACITANCE (pF) I CBO - COLLE CTOR CURRENT (uA) 10 100 I C - COLLECTOR CURRENT (mA) 10 1 0.1 10 Cib Co b 0.01 25 50 75 100 T A - AMBIE NT TEMP ERATURE ( C) ° 125 1 0.1 1 10 V CE - COLLECTOR VOLTAGE (V) 100