® CLT130,CLT131,CLT132,CLT133 NPN Silicon Phototransistors 0.210 (5.33) 0.190 (4.83) Technologies, Inc. CLT130, CLT131, CLT132 and CLT133 are exact replacements for obsolete part numbers CLT2130, CLT2140, CLT2150 and CLT2160. 0.190 (4.83) 0.176 (4.47) Clairex July, 2001 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE EMITTER 0.100 (2.54) dia 0.025 (0.64) max 0.060 (1.52) max 0.147 (3.73) 0.137 (3.48) 0.019 (0.48) 0.016 (0.41) ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) Case 17 features absolute maximum ratings (TA = 25°C unless otherwise stated) storage temperature .........................................................................-65°C to +150°C • high sensitivity operating temperature .....................................................................-65°C to +125°C • ± 9° acceptance angle lead soldering temperature(1) ...........................................................................260°C • custom aspheric lensed TO-18 collector-emitter voltage...................................................................................... 30V package continuous collector current ............................................................................. 50mA • transistor base is bonded continuous power dissipation(2) ......................................................................250mW • usable throughout visible and near infrared spectrum notes: • RoHS compliant 1. 0.06” (1.5mm) from the header for 5 seconds maximum 2. Derate linearly 2.0mW/°C from 25°C free air temperature to TA = +125°C. description The CLT130-CLT133 series are NPN silicon phototransistors mounted in TO-18 packages which feature custom double convex glass-to-metal sealed aspheric lenses. Narrow acceptance angle enables excellent on-axis coupling. These devices are mechanically and spectrally matched to the CLE130-CLE133 series of IREDs. For additional information, call Clairex. electrical characteristics (TA = 25°C unless otherwise noted) symbol parameter Light current(3) IL ICEO CLT130 CLT131 CLT132 CLT133 Collector dark current V(BR)CEO Collector-emitter breakdown min typ max units 0.60 1.2 2.4 4.0 - - 25 mA mA mA mA nA 30 - - V IC=100µA IC =1mA, VCE=5V, RL=1kΩ. tr, tf Output rise and fall time - 5.0 - µs θHP Total angle at half sensitivity points - 18 - deg. test conditions VCE=5V, Ee=1.5mW/cm2 VCE=5V, Ee=1.5mW/cm2 VCE=5V, Ee=1.5mW/cm2 VCE=5V, Ee=1.5mW/cm2 VCE=10V, Ee=0 note: 3. Radiation source for all light current testing is a 940nm IRED. Clairex reserves the right to make changes at any time to improve design and to provide the best possible product. Clairex Technologies, Inc. Phone: 972-265-4900 1301 East Plano Parkway Fax: 972-265-4949 Revised 3/22/06 Plano, Texas 75074-8524 www.clairex.com