COMCHIP SMD Fast Recovery Rectifiers SMD Diodes Specialist CFRM101-G Thru. CFRM107-G Voltage: 50 to 1000 Volts Current: 1.0 A RoHS Device Features Mini SMA -Plastic package has Underwirters Laboratory flammability classification 94V-0 utilizing flame retardant epoxy molding compound. 0.154(3.9) 0.138(3.5) 0.012(0.3) Typ. -For surface mounted applications. 0.071(1.8) 0.055(1.4) -Exceeds environmental standard of MIL-STD19500/228. -Low leakage current. 0.126(3.2) 0.110(2.8) Mechanical data 0.067(1.7) 0.051(1.3) -Case: Molded plastic, JEDEC SOD-123/Mini SMA. -Terminals: Solder plated, solderable per MIL-STD750, method 2026. 0.035(0.9) Typ. 0.035(0.9) Typ. -Polarity: Indicated by cathode band. -Weight: 0.04 grams approx. Maximum Ratings (at TA=25 Dimensions in inches and (millimeter) O C unless otherwise noted) Symbol CFRM 101-G CFRM 102-G CFRM 103-G CFRM 104-G CFRM 105-G CFRM 106-G CFRM 107-G Unit Repetitive peak reverse voltage V RRM 50 100 200 400 600 800 1000 V RMS voltage V RMS 35 70 140 280 420 560 700 V Continuous reverse voltage VR 50 100 200 400 600 800 1000 V Forward rectified current @T A =55 OC IO 1.0 A Maximum forward voltage VF 1.3 V I FSM 30 A IR 1.0 100 μA Parameter Forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Reverse current, V R =V RRM @T A =25 OC O @ T A =100 C Reverse recovery time t rr 150 250 nS 500 O RθJA 42 Diode junction capacitance CJ 15 Operating junction temperature TJ -55 to +150 O C T STG -55 to +150 O C Thermal resistance, junction to ambient air Storage temperature range C/W pF REV:B Page 1 QW-BF006 Comchip Technology CO., LTD. COMCHIP SMD Fast Recovery Rectifiers SMD Diodes Specialist Rating and Characteristic Curves (CFRM101-G Thru. CFRM107-G) Fig.1 Forward Characteristics Fig.2 Forward Current Derating Curve 1.2 Ι Ο , Averaged Forward Current (A) I F , Forward Current (A) 100 10 1 0.1 O T J =25 C Pulse width=300μs 1% duty cycle 0.01 0.6 1.0 0.8 0.6 0.4 Single phase, half wave, 60Hz, resistive or inductive load 0.2 0 0.8 1.0 1.2 1.4 1.6 1.8 0 2.0 50 Fig.3 Max. Non-repetitive Forward Surge Current 150 200 Fig.4 Typical Junction Capacitance 50 35 O T J =25 C 8.3ms single half sine wave, JEDEC method C J , Junction Capacitance (pF) I FSM , Peak Forward Surge Current (A) 100 T A , Ambient Temperature ( OC) V F , Forward Voltage (V) 40 30 20 10 0 1 10 30 25 20 15 10 5 0 0.01 100 1 0.1 Number of Cycles at 60Hz 10 100 V R , Reverse Voltage (V) Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics trr 50W NONINDUCTIVE 10W NONINDUCTIVE ( ) (+) 25Vdc (approx.) D.U.T. PULSE GENERATOR (NOTE 2) ( ) 1W NONINDUCTIVE | | | | | | | | +0.5A 0 -0.25A (+) OSCILLISCOPE (NOTE 1) -1.0A NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. 1cm SET TIME BASE FOR 50 / 10ns / cm REV:B Page 2 QW-BF006 Comchip Technology CO., LTD.