PNP BDX45 – BDX46 – BDX47 NPN BDX42 – BDX43– BDX44 SILICON PLANAR DARLINGTON TRANSISTORS The BDX45, BDX46 and BDX47 are silicon PNP planar Darlington transistors and are mounted in Jedec TO-126 plastic package. They are intented for use in industrial switching applications. The complementary NPN types are the BDX42, BDX43 and BDX44 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Ratings - VCBO Collector-Base Voltage - VCER Collector-EmitterVoltage - VEBO Emitter-Base Voltage Value - IC - IC Collector Current - ICM - IB Base Current PT Power Dissipation TJ Junction Temperature TS Storage Temperature COMSET SEMICONDUCTORS 60 80 90 45 60 80 BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 @ TC = 25° 5 BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 Unit V V V 1 A 2 0.1 A 1.25 Watts 150 °C -65 to +150 1/3 PNP BDX45 – BDX46 – BDX47 NPN BDX42 – BDX43– BDX44 THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-mb Ratings Value BDX45 Thermal Resistance, Junction to Ambient BDX46 BDX47 BDX45 Thermal Resistance, Junction to BDX46 Mounting base BDX47 Unit 100 K/W 10 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings - ICES Collector cut-off current VBE = 0 ; -VCE = 45V VBE = 0 ; -VCE = 60V VBE = 0 ; -VCE = 80V - IEBO Emitter cut-off current IC =0 ; VEB = 4V -IC=500 mA, -IB=0.5 mA -IC=1.0 A, -IB=1.0 mA - VCE(SAT) Collector-Emitter saturation Voltage (*) -IC=1.0 A, -IB=4.0 mA -IC=500 mA, -IB=0.5 mA Tj=150 °C -IC=1.0 A, -IB=1.0 mA Tj=150 °C -IC=1.0 A, -IB=4.0 mA Tj=150 °C -IC=500 mA, -IB=0.5 mA - VBE(SAT) Base-Emitter saturation Voltage (*) -IC=1.0 A, -IB=1.0 mA -IC=1.0 A, -IB=4.0 mA -VCE=10.0 V, -IC=150 mA hFE Min Typ Mx Unit Test Condition(s) DC Current Gain -VCE=10.0 V, -IC=500 mA COMSET SEMICONDUCTORS BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 - - 10 10 10 10 10 10 BDX45 BDX46 BDX47 BDX46 BDX45 BDX47 BDX45 BDX46 BDX47 - - 1.3 1.3 1.3 1.6 1.6 1.6 1.3 1.3 1.3 BDX46 - - 1.8 BDX45 BDX47 BDX45 BDX46 BDX47 BDX46 BDX45 BDX47 BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 - - 1.6 1.6 1.9 1.9 1.9 2.2 2.2 2.2 - 2/3 1000 1000 1000 2000 2000 2000 µA µA V V - PNP BDX45 – BDX46 – BDX47 NPN BDX42 – BDX43– BDX44 Symbol Test Condition(s) Ratings hfe Small Signal Current Gain ton Turn-on time toff Turn-off time ton Turn-on time toff Turn-off time Min Typ BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 -IC=500 mA, -IBon= IBoff=0.5 mA BDX45 BDX46 BDX47 BDX45 BDX46 BDX47 -IC=1 A, -IBon= IBoff=1.0 mA BDX45 BDX46 BDX47 -VCE=5.0 V, -IC=500 mA , f=35MHz MECHANICAL DATA CASE TO-126 DIMENSIONS mm min A B C D E F G H L M N P Pin 1 : Pin 2 : Case : inches max 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.2 typ. 0.49 0.75 4.4 typ. 2.54 typ. 15.7 typ. 1.2 typ. 3.8 typ. 3.0 3.2 min max 0.295 0.307 0.413 0.425 0.094 0.106 0.027 0.035 0.087 typ. 0.019 0.029 0.173 typ. 0.100 typ. 0.618 typ. 0.047 typ. 0.149 typ. 0.118 0.126 Emitter Collector Base COMSET SEMICONDUCTORS 3/3 - - 10 10 10 400 400 400 1500 1500 1500 400 400 400 1500 1500 1500 Mx Unit - - ns ns