NPN BD675-BD677-BD679-BD681 PNP BD676-BD678-BD680-BD682 SILICON DARLINGTON POWER TRANSISTORS The BD675-BD677-BD679-BD681 are NPN eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. PNP complements are BD676-BD678-BD680-BD682 . ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current IB PT TJ TStg Base current (peak value) Total power Dissipation Junction Temperature Storage Temperature Value BD675 BD677 BD679 BD681 BD675 BD677 BD679 BD681 IC ICM IBM @ Tmb = 25°C 60 80 100 120 60 80 100 120 5 4 6 0.1 40 150 -65 to +150 Unit V V V A A Watts °C °C THERMAL CHARACTERISTICS Symbol RthJ-mb RthJ-a Ratings Thermal Resistance, Junction to mouting base Thermal Resistance, Junction to ambient in free air COMSET SEMICONDUCTORS Value Unit 3.12 100 K/W K/W 1 NPN BD675-BD677-BD679-BD681 PNP BD676-BD678-BD680-BD682 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO Ratings Collector cut-off current ICEO Collector cut-off current IEBO VCE(SAT) Emitter cut-offcurrent Collector-Emitter saturation Voltage hFE DC Current Gain VBE Base-Emitter Voltage(1&2) hfe Small signal current gain fhfe VF Min Typ Test Condition(s) IE=0 , VCB= VCBOMAX=60 V IE=0 , VCB= VCBOMAX=80 V IE=0 , VCB= VCBOMAX=100 V IE=0 , VCB= VCBOMAX=120 V IE=0 ,VCB=½VCBOMAX= 30V,Tj= 150°C IE=0 ,VCB=½VCBOMAX= 40V,Tj= 150°C IE=0 ,VCB=½VCBOMAX= 50V,Tj= 150°C IE=0 ,VCB=½VCBOMAX= 60V,Tj= 150°C IB=0 , VCE= ½VCEOMAX=30 V IB=0 , VCE= ½VCEOMAX=40 V IB=0 , VCE= ½VCEOMAX=50 V IB=0 , VCE= ½VCEOMAX=60 V IC=0, -VEB=5 V BD675 BD677 BD679 BD681 - - 0,2 0,2 0,2 0,2 BD675 - - 1 BD677 - - 1 BD679 - - 1 BD681 - - 1 BD675 BD677 BD679 BD681 - - 0,2 0,2 0,2 0,2 5 mA - - 2,5 V 750 - 2200 1500 - 2,5 V 10 - - - 60 1,5 - kHz V 0,8 - - A - 0,3 1,5 1.5 5 µs IC=1.5 A,-IB=6 Ma (BD675 ; IC=2 A ) VCE=3 V, IC=500 mA VCE=3 V, IC=1,5 A VCE=3 V, IC=4 A VCE=3 V, IC=1,5 A (BD675 ; IC=2 A ) VCE=3 V, IC=1,5 A, f= 1 MHz (BD675 ; IC=2 A ) VCE=3 V, IC=1,5 A (BD675 ; IC=2 A ) IF=1,5 A (BD675 ; IF=2 A ) -VCE=50 V, tP= 20ms,non rep., without heatsink Ut-off frequency Diode forward voltage Second-breakdown I(SB) collector current Turn-on time ton -Icon= 1,5A, -Ibon= Iboff= 6mA, Turn-off time toff 1. Measured under pulse conditions :tP <300µs, δ <2%. 2. VBE decreases by about 3,6 mV/K with increasing temperature. COMSET SEMICONDUCTORS M Unit x mA 2 mA NPN BD675-BD677-BD679-BD681 PNP BD676-BD678-BD680-BD682 MECHANICAL DATA CASE TO-126 DIMENSIONS mm min A B C D E F G H L M N P Pin 1 : Pin 2 : Case : inches max 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.2 typ. 0.49 0.75 4.4 typ. 2.54 typ. 15.7 typ. 1.2 typ. 3.8 typ. 3.0 3.2 min max 0.295 0.307 0.413 0.425 0.094 0.106 0.027 0.035 0.087 typ. 0.019 0.029 0.173 typ. 0.100 typ. 0.618 typ. 0.047 typ. 0.149 typ. 0.118 0.126 Emitter Collector Base COMSET SEMICONDUCTORS 3 COMSET SEMICONDUCTORS 4