COMSET BCY78

PNP BCY78 – BCY79
SILICON PLANAR EPITAXIAL TRANSISTORS
The BCY78 and BCY79 are PNP transistors mounted in TO-18 metal package with the collector
connected to the case .
They are designed for use in audio drive and low-noise input stages.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage (IB =0)
VCES
Collector-Emitter Voltage (VBE =0)
VEBO
Emitter-Base Voltage (IC =0)
IC
Collector Current
IB
Base Current
PD
Total Power Dissipation
@ Tamb = 25°
PD
Total Power Dissipation
@ Tcase= 45°
TJ
Junction Temperature
TStg
Storage Temperature range
Value
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
Unit
-45
-32
-45
-32
-5
-5
V
V
V
-200
mA
-20
mA
390
mW
1
Watts
200
°C
-65 to +150
°C
THERMAL CHARACTERISTICS
Symbol
RthJ-a
RthJ-c
Ratings
Thermal Resistance, Junction to mounting
base
Thermal Resistance, Junction to ambient in
free air
COMSET SEMICONDUCTORS
BCY79
BCY78
BCY79
BCY78
Value
Unit
450
°C/W
150
°C/W
1/4
PNP BCY78 – BCY79
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
Ratings
ICES
Collector Cutoff Current
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB =-35 V, VBE =0V
VCB =-25 V, VB =0V
VCB =-35 V
VBE =0V,Tj =150°C
VCB =-25 V
VBE =0V,Tj =150°C
VBE =-4.0 V, IC =0
VEBO
Collector Emitter Breakdown
IC =-2 mA, IB =0
Voltage
Emitter Base Breakdown
IE =-1µA, IC =0
Voltage
VCE(SAT)
Collector-Emitter saturation
Voltage
VCEO
VBE(SAT)
Base-Emitter Saturation
Voltage
IC =-10 mA, IB =-0.25 mA
IC =-100 mA, IB =-2.5 mA
IC =-10 mA, I B=-0.25 mA
IC =-100 mA, IB =-2.5 mA
IC =-10 µA, VCE =-5 V
IC =-2 mA, VCE =-5 V
VBE
Base-Emitter Voltage
IC =-10 mA, VCE =-1 V
IC =-100 mA, VCE =-1 V
IC =-10 µA, VCE =-5 V
hFE
DC Current Gain
IC =-2 mA, VCE =-5 V
IC =-10 mA, VCE =-1 V
hfe
Small-Signal
Current Gain
Min Typ
Test Condition(s)
IC =-100 mA, VCE =-1 V
IC =2 mA, VC E=5 V
f = 1kHz
BCY79VII
BCY78VII
Typ.140
>120
<220
>80
>40
>125
<250
COMSET SEMICONDUCTORS
BCY79
BCY78
Mx
Unit
-
-
-20
nA
-
-
-10
µA
-
-
-20
nA
-45
-32
-
-
V
-5
-
-
V
-
-0.12
-0.25
-
-04
-08
-0.6
-0.7
-0.85
-0.7
-0.85
-1.2
-
-0.55
-
-0.6
-0.65
-0.75
-
-0.68
-
-
-0.75
-
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
V
BCY79VIII
BCY78VIII
>30
Typ.200
>180
<310
>120
<400
>45
>175
<350
V
BCY79IX
BCY78IX
>40
Typ.270
>250
<460
>160
<630
>60
>250
<500
BCY79X
BCY78X
>100
Typ.390
>380
<630
>240
<1000
>60
>350
<700
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PNP BCY78 – BCY79
Symbol
Ratings
Test Condition(s)
fT
Transition frequency
IC =-10 mA, VCE =-5 V
f = 100MHz
F
Noise figure , RS=2kΩ
IC =-200 µA, VCE =-5 V
f = 1kHz, B =200Hz
td
Delay time
tr
Rise time
ICon =-10 mA
IBon = -IBoff = -1mA
VBB =3.6 V
R1= R2 = 5kΩ
ton
Turn on time
ts
Storage time
tf
Fall time
toff
Turn off time
td
Delay time
tr
Rise time
ton
Turn on time
ts
Storage time
tf
Fall time
toff
Turn off time
CC
Collector capacitance
IE = Ie = 0 ,VCB =-10 V
f = 1MHz
CE
Emitter capacitance
IC = Ic = 0 ,VEB =-0.5 V
f = 1MHz
RL = 990 Ω
ICon =-100 mA
IBon = -IBoff = -10mA
VBB =5 V
R1= 500Ω
R2 = 700Ω
RL = 98 Ω
COMSET SEMICONDUCTORS
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
BCY79
BCY78
Min
Typ Mx
Unit
-
180
-
MHz
-
2
6
db
-
35
-
-
50
-
-
85
150
-
400
-
-
80
-
-
480
800
-
5
-
-
50
-
-
55
150
-
250
-
-
200
-
-
450
800
-
-
5
pF
-
-
15
pF
ns
ns
3/4
PNP BCY78 – BCY79
MECHANICAL DATA CASE TO-18
DIMENSIONS
mm
A
B
D
E
F
G
H
I
L
Pin 1 :
Pin 2 :
Pin 3 :
12,7
0,49
5,3
4,9
5,8
2,54
1,2
1,16
45°
inches
0,5
0,019
0,208
0,193
0,228
0,1
0,047
0,045
45°
emitter
base
Collector
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
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