PNP BCY78 – BCY79 SILICON PLANAR EPITAXIAL TRANSISTORS The BCY78 and BCY79 are PNP transistors mounted in TO-18 metal package with the collector connected to the case . They are designed for use in audio drive and low-noise input stages. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage (IB =0) VCES Collector-Emitter Voltage (VBE =0) VEBO Emitter-Base Voltage (IC =0) IC Collector Current IB Base Current PD Total Power Dissipation @ Tamb = 25° PD Total Power Dissipation @ Tcase= 45° TJ Junction Temperature TStg Storage Temperature range Value BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 Unit -45 -32 -45 -32 -5 -5 V V V -200 mA -20 mA 390 mW 1 Watts 200 °C -65 to +150 °C THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to mounting base Thermal Resistance, Junction to ambient in free air COMSET SEMICONDUCTORS BCY79 BCY78 BCY79 BCY78 Value Unit 450 °C/W 150 °C/W 1/4 PNP BCY78 – BCY79 ELECTRICAL CHARACTERISTICS Tj=25°C unless otherwise specified Symbol Ratings ICES Collector Cutoff Current ICES Collector Cutoff Current IEBO Emitter Cutoff Current VCB =-35 V, VBE =0V VCB =-25 V, VB =0V VCB =-35 V VBE =0V,Tj =150°C VCB =-25 V VBE =0V,Tj =150°C VBE =-4.0 V, IC =0 VEBO Collector Emitter Breakdown IC =-2 mA, IB =0 Voltage Emitter Base Breakdown IE =-1µA, IC =0 Voltage VCE(SAT) Collector-Emitter saturation Voltage VCEO VBE(SAT) Base-Emitter Saturation Voltage IC =-10 mA, IB =-0.25 mA IC =-100 mA, IB =-2.5 mA IC =-10 mA, I B=-0.25 mA IC =-100 mA, IB =-2.5 mA IC =-10 µA, VCE =-5 V IC =-2 mA, VCE =-5 V VBE Base-Emitter Voltage IC =-10 mA, VCE =-1 V IC =-100 mA, VCE =-1 V IC =-10 µA, VCE =-5 V hFE DC Current Gain IC =-2 mA, VCE =-5 V IC =-10 mA, VCE =-1 V hfe Small-Signal Current Gain Min Typ Test Condition(s) IC =-100 mA, VCE =-1 V IC =2 mA, VC E=5 V f = 1kHz BCY79VII BCY78VII Typ.140 >120 <220 >80 >40 >125 <250 COMSET SEMICONDUCTORS BCY79 BCY78 Mx Unit - - -20 nA - - -10 µA - - -20 nA -45 -32 - - V -5 - - V - -0.12 -0.25 - -04 -08 -0.6 -0.7 -0.85 -0.7 -0.85 -1.2 - -0.55 - -0.6 -0.65 -0.75 - -0.68 - - -0.75 - BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 V BCY79VIII BCY78VIII >30 Typ.200 >180 <310 >120 <400 >45 >175 <350 V BCY79IX BCY78IX >40 Typ.270 >250 <460 >160 <630 >60 >250 <500 BCY79X BCY78X >100 Typ.390 >380 <630 >240 <1000 >60 >350 <700 2/4 PNP BCY78 – BCY79 Symbol Ratings Test Condition(s) fT Transition frequency IC =-10 mA, VCE =-5 V f = 100MHz F Noise figure , RS=2kΩ IC =-200 µA, VCE =-5 V f = 1kHz, B =200Hz td Delay time tr Rise time ICon =-10 mA IBon = -IBoff = -1mA VBB =3.6 V R1= R2 = 5kΩ ton Turn on time ts Storage time tf Fall time toff Turn off time td Delay time tr Rise time ton Turn on time ts Storage time tf Fall time toff Turn off time CC Collector capacitance IE = Ie = 0 ,VCB =-10 V f = 1MHz CE Emitter capacitance IC = Ic = 0 ,VEB =-0.5 V f = 1MHz RL = 990 Ω ICon =-100 mA IBon = -IBoff = -10mA VBB =5 V R1= 500Ω R2 = 700Ω RL = 98 Ω COMSET SEMICONDUCTORS BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 BCY79 BCY78 Min Typ Mx Unit - 180 - MHz - 2 6 db - 35 - - 50 - - 85 150 - 400 - - 80 - - 480 800 - 5 - - 50 - - 55 150 - 250 - - 200 - - 450 800 - - 5 pF - - 15 pF ns ns 3/4 PNP BCY78 – BCY79 MECHANICAL DATA CASE TO-18 DIMENSIONS mm A B D E F G H I L Pin 1 : Pin 2 : Pin 3 : 12,7 0,49 5,3 4,9 5,8 2,54 1,2 1,16 45° inches 0,5 0,019 0,208 0,193 0,228 0,1 0,047 0,045 45° emitter base Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 4/4