PNP BD132 NPN BD131 SILICON PLANAR EPITAXIAL POWER TRANSISTORS The BD132are PNN transistors mounted in Jedec TO-126 plastic package. Medium power applications. NPN complements are BD131 . ABSOLUTE MAXIMUM RATINGS Symbol -VCEO -VCBO -VEBO Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol IC Ratings Collector Current PT Base current (peak value) Reverse base current (peak value) Total power Dissipation TJ TStg Junction Temperature Storage Temperature IB Value Unit 45 45 4 V V V Value Unit -IC -ICM -IBM +IBM 3 6 0.5 0.5 @ Tmb = 60°C 15 Watts 150 -65 to +150 °C °C A A THERMAL CHARACTERISTICS Symbol RthJ-mb Ratings Thermal Resistance, Junction to mouting base COMSET SEMICONDUCTORS Value Unit 6 K/W 1 PNP BD132 NPN BD131 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) -ICBO Collector cut-off current -IEBO Emitter cut-offcurrent -VCE(SAT) -VBE(SAT) IE=0 , -VCB=40 V IE=0 , -VCB=40 V ,Tj= 150°C IC=0, -VEB=3 V Collector-Emitter saturation Voltage Base-Emitter saturation Voltage DC Current Gain hFE min A B C D E F G H L M N P Pin 1 : Pin 2 : Case : - - 5 500 5 40 20 - 0.3 1.2 0.7 1,5 - µA µA V V MECHANICAL DATA CASE TO-126 DIMENSIONS mm -IC=0.5 A, -IB=50 mA -IC=2.0 A, -IB=200 mA -IC=0.5 A, -IB=50 mA -IC=2.0 A, -IB=200 mA -VCE=12 V, -IC=500m A -VCE=1 V, -IC=2 A Min Typ Mx Unit inches max 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.2 typ. 0.49 0.75 4.4 typ. 2.54 typ. 15.7 typ. 1.2 typ. 3.8 typ. 3.0 3.2 min max 0.295 0.307 0.413 0.425 0.094 0.106 0.027 0.035 0.087 typ. 0.019 0.029 0.173 typ. 0.100 typ. 0.618 typ. 0.047 typ. 0.149 typ. 0.118 0.126 Emitter Collector Base COMSET SEMICONDUCTORS 2