PNP BD684 NPN BD683 SILICON DARLINGTON POWER TRANSISTORS The BD684 are PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. NPN complements are BD683 . ABSOLUTE MAXIMUM RATINGS Symbol -VCEO -VCBO Ratings -VEBO Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage -IC Collector Current -IB PT TJ TStg Base current (peak value) Total power Dissipation Junction Temperature Storage Temperature -IC -ICM -IBM @ Tmb = 25°C Value Unit 120 120 5 V V V 4 6 0.1 40 150 -65 to +150 A A Watts °C °C THERMAL CHARACTERISTICS Symbol RthJ-mb RthJ-a Ratings Thermal Resistance, Junction to mouting base Thermal Resistance, Junction to ambient in free air COMSET SEMICONDUCTORS Value Unit 3.12 100 K/W K/W 1 PNP BD684 NPN BD683 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) -ICBO Collector cut-off current -ICEO -IEBO -VCE(SAT) Collector cut-off current Emitter cut-offcurrent Collector-Emitter saturation Voltage hFE DC Current Gain M Unit x IE=0 , -VCB= -VCEOMAX=120 V IE=0 , -VCB= -1/2VCBOMAX= 60V,Tj= 150°C IB=0 , -VCE= -1/2VCEOMAX=60 V IC=0, -VEB=5 V - - 0,2 1 0,2 5 mA mA -IC=1.5 A, -IB=6 Ma - - 2,5 V 750 10 - 2200 650 60 1,5 2,5 - V kHz V 0,8 - - A - 0,8 4,5 2 8 µs -VCE=3 V, -IC=500 mA -VCE=3 V, -IC=1,5 A -VCE=3 V, -IC=4 A -VCE=3 V, -IC=1,5 A -VCE=3 V, -IC=1,5 A, f= 1 MHz -VCE=3 V, -IC=1,5 A IF=1,5 A -VCE=50 V, tP= 20ms,non rep., without heatsink (BD676 ; VCE=40 V ) -VBE hfe fhfe VF Min Typ Base-Emitter Voltage(1&2) Small signal current gain Ut-off frequency Diode forward voltage Second-breakdown -I(SB) collector current Turn-on time ton -Icon= 1,5A, Ibon= -Iboff= 6mA, VCC=30V Turn-off time toff 1. Measured under pulse conditions :tP <300µs, δ <2%. 2. VBE decreases by about 3,6 mV/K with increasing temperature. MECHANICAL DATA CASE TO-126 DIMENSIONS mm min A B C D E F G H L M N P Pin 1 : Pin 2 : Case : inches max 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.2 typ. 0.49 0.75 4.4 typ. 2.54 typ. 15.7 typ. 1.2 typ. 3.8 typ. 3.0 3.2 min max 0.295 0.307 0.413 0.425 0.094 0.106 0.027 0.035 0.087 typ. 0.019 0.029 0.173 typ. 0.100 typ. 0.618 typ. 0.047 typ. 0.149 typ. 0.118 0.126 Emitter Collector Base COMSET SEMICONDUCTORS 2 mA