COMSET BD684

PNP BD684
NPN BD683
SILICON DARLINGTON POWER
TRANSISTORS
The BD684 are PNP eptaxial-base transistors in monolithic Darlington circuit for audio
and video applications.
They are mounted in Jedec TO-126 plastic package.
NPN complements are BD683 .
ABSOLUTE MAXIMUM RATINGS
Symbol
-VCEO
-VCBO
Ratings
-VEBO
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
-IC
Collector Current
-IB
PT
TJ
TStg
Base current (peak value)
Total power Dissipation
Junction Temperature
Storage Temperature
-IC
-ICM
-IBM
@ Tmb = 25°C
Value
Unit
120
120
5
V
V
V
4
6
0.1
40
150
-65 to +150
A
A
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
RthJ-mb
RthJ-a
Ratings
Thermal Resistance, Junction to mouting base
Thermal Resistance, Junction to ambient in free air
COMSET SEMICONDUCTORS
Value
Unit
3.12
100
K/W
K/W
1
PNP BD684
NPN BD683
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
-ICBO
Collector cut-off current
-ICEO
-IEBO
-VCE(SAT)
Collector cut-off current
Emitter cut-offcurrent
Collector-Emitter saturation
Voltage
hFE
DC Current Gain
M
Unit
x
IE=0 , -VCB= -VCEOMAX=120 V
IE=0 , -VCB= -1/2VCBOMAX= 60V,Tj= 150°C
IB=0 , -VCE= -1/2VCEOMAX=60 V
IC=0, -VEB=5 V
-
-
0,2
1
0,2
5
mA
mA
-IC=1.5 A, -IB=6 Ma
-
-
2,5
V
750
10
-
2200
650
60
1,5
2,5
-
V
kHz
V
0,8
-
-
A
-
0,8
4,5
2
8
µs
-VCE=3 V, -IC=500 mA
-VCE=3 V, -IC=1,5 A
-VCE=3 V, -IC=4 A
-VCE=3 V, -IC=1,5 A
-VCE=3 V, -IC=1,5 A, f= 1 MHz
-VCE=3 V, -IC=1,5 A
IF=1,5 A
-VCE=50 V, tP= 20ms,non rep., without
heatsink (BD676 ; VCE=40 V )
-VBE
hfe
fhfe
VF
Min Typ
Base-Emitter Voltage(1&2)
Small signal current gain
Ut-off frequency
Diode forward voltage
Second-breakdown
-I(SB)
collector current
Turn-on time
ton
-Icon= 1,5A, Ibon= -Iboff= 6mA, VCC=30V
Turn-off time
toff
1. Measured under pulse conditions :tP <300µs, δ <2%.
2. VBE decreases by about 3,6 mV/K with increasing temperature.
MECHANICAL DATA CASE TO-126
DIMENSIONS
mm
min
A
B
C
D
E
F
G
H
L
M
N
P
Pin 1 :
Pin 2 :
Case :
inches
max
7.4
7.8
10.5
10.8
2.4
2.7
0.7
0.9
2.2 typ.
0.49
0.75
4.4 typ.
2.54 typ.
15.7 typ.
1.2 typ.
3.8 typ.
3.0
3.2
min
max
0.295
0.307
0.413
0.425
0.094
0.106
0.027
0.035
0.087 typ.
0.019
0.029
0.173 typ.
0.100 typ.
0.618 typ.
0.047 typ.
0.149 typ.
0.118
0.126
Emitter
Collector
Base
COMSET SEMICONDUCTORS
2
mA